OYO BUTURI
Vol.87
No.2
2018
2
20182872106
OYO BUTURI Vol.87 No.2 (2018)
Recent Developments

Inversion-type diamond MOSFETs

Tsubasa MATSUMOTO1

Diamond semiconductors have an outstanding potential for use in the field of high-power electronics because their breakdown electric field, thermal conductivity, and carrier mobility are higher than those of Si, SiC and GaN. At present, inversion-type Si MOSFETs are widely used because of the high controllability of their electric power and high tolerance. However, inversion-type diamond MOSFETs have not yet been realized because the fabrication of a high quality diamond MOS interface is difficult. The MOS interface was precisely controlled by wet annealing and p-channel and planar-type MOSFETs with a selective heavily boron-doped p-type diamond region were fabricated.

  • 1 Institute of Science and Engineering, Kanazawa University
OYO BUTURI Vol.87 No.2 p.106 (2018)