33rd JSAP AWARDS (Year 2011)

JSAP Paper Award

Award Recipients	Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada,Genshiro Kawachi, and Masakiyo Matsumura
Title of the Paper	Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films
Authours	Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada,Genshiro Kawachi, and Masakiyo Matsumura
Affiliation	Advanced LCD Technologies Development Center Co., Ltd.
Journal	Jpn. J. Appl. Phys. 49 (2010) 124001

Award Recipients	Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana
Title of the Paper	Microplasma-Induced Deformation of an Anomalous Response Spectrum of Electromagnetic Waves Propagating along Periodically Perforated Metal Plates
Authours	Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana
Affiliation	Kyoto University
Journal	Jpn. J. Appl. Phys. 48 (2009) 062004

Award Recipients	Daiyu Kondo, Shintaro Sato, Katsunori Yagi, Naoki Harada, Motonobu Sato, Mizuhisa Nihei, and Naoki Yokoyama
Title of the Paper	Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
Authours	Daiyu Kondo1,2,3, Shintaro Sato1,2,3 , Katsunori Yagi1, Naoki Harada1,Motonobu Sato1,2,3, Mizuhisa Nihei1,2,3, and Naoki Yokoyama1
Affiliation	1 Fujitsu Laboratories Ltd., 2 Fujitsu Limited, 3 JST
Journal	Appl. Phys. Express 3 (2010) 025102

Award Recipients	Scott D. Findlay, Tomohiro Saito, Naoya Shibata, Yukio Sato, Junko Matsuda, Kohta Asano, Etsuo Akiba, Tsukasa Hirayama, and Yuichi Ikuhara
Title of the Paper	Direct Imaging of Hydrogen within a Crystalline Environment
Authours	Scott D. Findlay1, Tomohiro Saito2, Naoya Shibata1,3, Yukio Sato1, Junko Matsuda4,Kohta Asano4, Etsuo Akiba4, Tsukasa Hirayama2, and Yuichi Ikuhara1,2,5
Affiliation	1 The University of Tokyo, 2 Japan Fine Ceramics Center, 3 JST, 4 AIST, 5 Tohoku University
Journal	Appl. Phys. Express 3 (2010) 116603

Award Recipients	Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi
Title of the Paper	Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
Authours	Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi
Affiliation	The University of Tokyo
Journal	Jpn. J. Appl. Phys. 49 (2010) 051304

Award Recipients	Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono
Title of the Paper	Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
Authours	Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono
Affiliation	Kyoto University
Journal	Jpn. J. Appl. Phys. 49 (2010) 056203

JSAP Young Scientist Award

Award Recipients	Takashi Ando
Title of the Paper	Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process
Authours	Takashi Ando, Tomoyuki Hirano, Kaori Tai, Shinpei Yamaguchi, Shinichi Yoshida, Hayato Iwamoto, Shingo Kadomura, and Heiji Watanabe
Affiliation	Osaka University
Journal	Jpn. J. Appl. Phys. 49 (2010) 016502

Award Recipients	Shinsuke Yada
Title of the Paper	Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnx Grown on Ge(111)
Authours	Shinsuke Yada, Ryohei Okazaki, Shinobu Ohya and Masaaki Tanaka
Affiliation	The University of Tokyo
Journal	Appl. Phys. Express 3 (2010) 123002

Award Recipients	Gento Yamahata
Title of the Paper	Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K
Authours	Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, and Shunri Oda
Affiliation	Tokyo Institute of Technology
Journal	Appl. Phys. Express 2 (2009) 095002

Award Recipients	Toru Hiyoshi
Title of the Paper	Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
Authours	Toru Hiyoshi and Tsunenobu Kimoto
Affiliation	Kyoto University
Journal	Appl. Phys. Express 2 (2009) 091101

Award Recipients	Hirokazu Masai
Title of the Paper	High Photoluminescent Property of Low-Melting Sn-Doped Phosphate Glass
Authours	Hirokazu Masai, Yoshihiro Takahashi, Takumi Fujiwara, Syuji Matsumoto, and Toshinobu Yoko
Affiliation	Tohoku University
Journal	Appl. Phys. Express 3 (2010) 082102

Award Recipients	Kosuke Kakuyanagi
Title of the Paper	Generation of Non-Classical Microwave Photon States in an Inductor–Capacitor Resonator Coupled to a Superconducting Flux Qubit
Authours	Kosuke Kakuyanagi, Seiichiro Kagei, Shiro Saito, Hayato Nakano, and Kouichi Semba
Affiliation	NTT Basic Research Laboratories, NTT Corporation
Journal	Appl. Phys. Express 3 (2010) 103101

Award Recipients	Takayoshi Katase
Title of the Paper	High Critical Current Density 4MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La,Sr)(Al,Ta)O3 Substrates without Buffer Layers
Authours	Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, and Hideo Hosono
Affiliation	Materials and Structures Laboratory,Tokyo Institute of Technology
Journal	Appl. Phys. Express 3 (2010) 063101

Award Recipients	Jun-ichi Inoue
Title of the Paper	Self Contact Organic Transistors
Authours	Jun-ichi Inoue, Hiroshi Wada, and Takehiko Mori
Affiliation	Tokyo Institute of Technology
Journal	Jpn. J. Appl. Phys. 49 (2010) 071605

Award for Best Review Paper

Award Recipients	Yoshihiko Takano
Title of the Paper	Crystal Structure and Physical Properties of Newly Discovered Iron-Based Superconductors
Authours	Yoshihiko Takano
Affiliation	NIMS
Journal	OYO BUTURI 79 (2010) pp. 20-24

Award Recipients	Hiromasa Ito
Title of the Paper	Terahertz-Wave Sources : the Frequency Gap between Lasers and Masers
Authours	Hiromasa Ito
Affiliation	RIKEN
Journal	OYO BUTURI 79 (2010) pp. 524-529

The Japan Society of Applied Physics