5th JSAP Fellow (2011)

2011 JSAP Fellow Award Recipients

Kenjiro Oura
Chairman of the Fifth Fellow Award Candidate Selection Committee
The Japan Society of Applied Physics

The Japan Society of Applied Physics (JSAP) has established a new award (Fellow Award) to honor its research members who have greatly contributed to the progress of applied physics through their continuous activities in JSAP, in addition to the existing awards such as the Outstanding Achievement Award and JSAP Outstanding Paper Award. Established in 2007, the Fellow Award was presented to 86 members in the initial year, 73 in 2008, 68 in 2009, 30 in 2010, and 18 in its fifth year of 2011.

The guidelines on the fifth Fellow Awards were announced in Oyo Buturi (Vol. 79, No. 9), the Japanese language journal of the Society; 30 candidates were nominated by JSAP members and fellows. Each candidate was carefully screened on the basis of their accomplishments in research, technological development, and educational and public-interest activities. After three meetings convened by Fellow Award Candidate Selection Committee, the number of candidates was finally narrowed down to 18. This selection result was approved by the Board of JSAP on 13 May 2011.

The Fifth JSAP Fellows Award Ceremony will be held during the 2011 Fall Meeting, which will start on 29 August 2011.

We express our deepest gratitude to all those who nominated the many award-worthy candidates. It is our expectation that excellent candidates will continue to be nominated and that the Fellow Award will develop into an authoritative award of JSAP.

Fellow Award Recipients and Their Research Titles

Fellow Recipients	Masatoshi Adachi
Affiliation	Professor Emeritus of Toyama Prefectural University
Title of the Accomplishment	Research and Development of High-Performance Piezoelectric and Ferroelectric Materials, and Their Device Applications

Fellow Recipients	Hiroshi Ishikawa
Affiliation	Director, Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology
Title of the Accomplishment	Development of Semiconductor Lasers Widely Used in Communication Systems and Pioneering Research on Ultrafast All-Optical Signal Processing Devices

Fellow Recipients	Tatsuo Oomori
Affiliation	Deputy General Manager, Power Device Works, Mitsubishi Electric Corporation
Title of the Accomplishment	Research and Development of SiC Power Device, and Its Industrialization

Fellow Recipients	Matsuto Ogawa
Affiliation	Dean, Professor, Graduate School of Engineering, Kobe University
Title of the Accomplishment	Pioneering Contributions to Development of Atomistic Nano-Scaled Device Simulators

Fellow Recipients	Yoichi Kawakami
Affiliation	Professor, Department of Electronic Science and Engineering, Kyoto University
Title of the Accomplishment	Research on Fundamental Optical Properties and New Optical Functionalities in Wide Bandgap Semiconductors

Fellow Recipients	Kohji Kishio
Affiliation	Professor, School of Engineering, University of Tokyo
Title of the Accomplishment	Pioneering Work in Design and Development of New High-Temperature Superconducting Materials

Fellow Recipients	Tadashi Sakai
Affiliation	Senior Research Scientist, Corporate Research and Development Center, Toshiba Corporation
Title of the Accomplishment	Development of Carbon Materials and Their Applications for Electron Emitter and LSI Interconnect

Fellow Recipients	Atsuhito Sawabe
Affiliation	Professor, Department of Electrical Engineering and Electronics, Aoyama Gakuin University
Title of the Accomplishment	Development of Large-Size Diamond Wafers by Heteroepitaxial Growth Method

Fellow Recipients	Kentaro Setsune
Affiliation	Professor, Continuing Professional Development Center, Graduate School of Engineering, Osaka University
Title of the Accomplishment	Research and Development of Thin Film and Device Engineering for Functional Oxide Materials

Fellow Recipients	Mikio Takai
Affiliation	Professor, Center for Quantum Science and Technology under Extreme Conditions, Osaka University
Title of the Accomplishment	Investigation on Beam Process, Analysis Techniques, and Vacuum Nanoelectronics

Fellow Recipients	Yoshiaki Takai
Affiliation	President, Toyota National College of Technology
Title of the Accomplishment	Outstanding Activities on Education and Enlightenment of Science, Engineering and Applied Physics

Fellow Recipients	Toshio Fujii
Affiliation	Director, Device & Materials Laboratories, Fujitsu Laboratories Ltd.
Title of the Accomplishment	Study on Molecular Beam Epitaxy of III-V Compound Semiconductors and Applications to Photonic and Electronic Devices

Fellow Recipients	Tomoyoshi Mishima
Affiliation	General Manager, Advanced Electronic Materials Research Department, Research & Development Laboratory, Hitachi Cable, Ltd.
Title of the Accomplishment	Research on Crystal Growth and Applications of III-V Semiconductors

Fellow Recipients	Koh-Ichi Mochiki
Affiliation	Professor, Department of Nuclear Safety Engineering, Tokyo City University
Title of the Accomplishment	Development and Application of Radiation Imaging System

Fellow Recipients	Takayasu Mochizuki
Affiliation	Professor, Laboratory of Advanced Science and Technology for Industry, University of Hyogo
Title of the Accomplishment	Study on Physics of Laser-Produced Plasma X-Ray Source and Its Practical Application

Fellow Recipients	Yasunori Mochizuki
Affiliation	General Manager, Information and Media Processing Laboratories, NEC Corporation
Title of the Accomplishment	Microscopic Characterization of Point Defects and Interfaces in Semiconductors for Device Technology

Fellow Recipients	Kiyoshi Yase
Affiliation	Director, Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology
Title of the Accomplishment	Leading Activities in Fundamental Research of Organic Thin Solid Films and in Application to Molecular Electronics and Bioelectronics

Fellow Recipients	Satoshi Yamasaki
Affiliation	Principal Research Scientist, Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology
Title of the Accomplishment	Structural Investigation and Application of Group-IV Semiconductor Thin Films