15 Science and Technology of Crystals
15.1 Bulk Crystal Growth
Sept. 14 9:30〜12:30
14a-ZT - 1〜12
	1	Second harmonic generation property of MgO-doped LiNbO3 bulk single crystal having the stoichiometric composition coincident with its stoichiometric composition	IMR Tohoku Univ.1, CIR Tohoku Univ.2　○Hiromitsu Kimura1, Haruhiko Koizumi1, Kazumasa Sugiyama1, Tetsuo Taniuchi2, Satoshi Uda1
△	2	Growth and spectroscopy of Nd doped KLiLuF5 single crystals	IMRAM Tohoku Univ.1, TOKUYAMA corp.2, New Industry Creation Hatchery Center (NICHe)3, IMR Tohoku Univ.4　○（M2）Yuki Furuya1, Hidehiko Tanaka1, Noriaki Kawaguchi1,2, Takayuki Yanagida1, Yuui Yokota1, Kazumasa Sugiyama4, Akira Yoshikawa1,3
△	3	Crystal growth of Nd doped CaF2 single crystal for VUV scintillator by Czochralski method	IMR1, IMRAM2, TOKUYAMA corp3, NICHe4　○（M2）Hidehiko Tanaka1,2, Yuki Furuya2, Noriaki Kawaguchi2,3, Yui Yokota2, Takayuki Yanagida2, Yoshiyuki Kawazoe1, Akira Yoshikawa4
△	4	Crystal growth and scintillation properties of Nd-doped Lu3Al5O12 single crystals	IMRAM, Tohoku University1, NICHe, Tohoku University2　○Makoto Sugiyama1, Yutaka Fujimoto1, Takayuki Yanagida1, Yokota Yuui1, Yoshikawa Akira1,2
	5	Study on the correlation between crystallinity and scintillation properties in Pr:LuAG single crystal	Tohoku Univ.1, Furukawa Co. Ltd.2, NICHe, Tohoku Univ.3　○Akihiro Yamaji1, Takayuki Yanagida1, Yuuki Furuya1, Kei Kamada2, Akira Yoshikawa1,3
	6	Growth and scintillation properties of Ce: (Gd,Y)3Al5O12(GYAG) single Crystals	Furukawa co. ltd.1, IMRAM, Tohoku Univ.2　○Kei Kamada1, Takayuki Yanagida2, Yuu Fujimoto2, Akihiro Fukabori2, Yoshiyuki Usuki1, Akira Yoshikawa2
	7	Growth and optical property of Al doped CsLiB6O10	Graduate School of Eng., Osaka Univ.1, CREST-JST2　○Yuji Fukushima1,2, Yusuke Mizobe1,2, Yoshinori Takahashi1,2, Masashi Yoshimura1,2, Yushi Kaneda1,2, Yasuo Kitaoka1,2, Yusuke Mori1,2, Takatomo Sasaki1,2
	8	Growth of shaped and multiple sapphire crystals by a micro-pulling-down method	IMRAM Tohoku Univ.1, TDK2, NICHe Tohoku Univ.3　○Yuui Yokota1, Valery Chani1, Masato Sato1,2, Kazushige Tota2, Ko Onodera2, Takayuki Yanagida1, Akira Yoshikawa1,3
	9	Growth and properties of alkali metal doped potassium niobate crystals	NIMS1, Univ. Wollongong2　○Hideo Kimura1, Rumi Tanahashi1, Hongyang Zhao1, Zhenxiang Cheng2, Xiaollin Wang2
	10	Characteristics of oxygen in germanium crystals Czochralski-grown from B2O3-covered melt	Shinshu Univ. (ICST)1, Shinshu Univ. (Eng)2, Tohoku Univ. (IMR)3　○Toshinori Taishi1, Yoshio Hashimoto2, Hideaki Ise3, Takayuki Osawa3, Ichiro Yonenaga3
	11	Development of three dimensional X-ray topography using synchrotron radiation and observation of dislocation distribution in the neck-part of CZ-silicon crystals	JASRI1, Univ.Toyama2, Saga-LS3　○Kentaro Kajiwara1, Satoshi Iida2, Seiji Kawado3
▲△	12	The effect of gravity on the dissolution process of GaSb into InSb melt: Experiment and simulation	RIE Shizuoka Univ.1, Osaka Univ.2, Shizuoka Insti Sci. and Tech.3, JAXA4　○Rajesh Govindasamy1, Arivanandhan Mukannan1, Hisashi Morii1, Natsuki Suzuki1, Toru Aoki1, Tadanobu Koyama1, Yoshimi Momose1, Akira Tanaka1, Sankaranarayanan Krishnasamy1, Yasunori Okano2, Tetsuo Ozawa3, Yuko Inatomi4, Yasuhiro Hayakawa1
15.2 II-VI Crystals
Sept. 14 13:45〜17:30
14p-ZT - 1〜14
	1	Photoluminescence of stacked structure of CdSe quantum dots fabricated by an alternate molecular beam supply (II)	Okayama University of Science1　○Yuto Banden1, Masakazu Ohishi1, Hiroshi Saito1, Minoru Yoneta1
	2	Investigation of luminescence properties of BeZnSeTe II-VI compound semiconductor quaternaries grown on InP substrates.	Sophia Univ.1　○Kazuki Muraishi3, Ichirou Nomura1, Ramesh Vadivelu1, Yutaka Sawafuji1, Kastumi Kishino1
	3	Room-temperature CW operation of BeZnCdSe-quantum-well green laser diodes	AIST1, Hitachi2, Sony3　○Jun-ichi Kasai1, Ryouichi Akimoto1, Haruhiko Kuwatsuka1, Toshifumi Hasama1, Hiroshi Ishikawa1, Sumiko Fujisaki2, Takeshi Kikawa2, Shigehisa Tanaka2, Shinji Tsuji2, Hiroshi Nakajima3, Kunihiko Tasai3, Yoshiro Takiguchi3, Tsunenori Asatsuma3, Koshi Tamamura3
	4	Growth and Characterization of ZnTe/ZnMgTe quantum well structures by molecular beam epitaxy	Saga Univ.1　hiroshi OHshita1, Tooru Tanaka1, katsuhiko saitou1, Qixin Guo1, ○mituhiro nishio1
	5	Light switching driven by light of ZnSe-ZnTe dual sub-band superlattices	Hokkaido Inst. of Tech.1　○Kazuya Takahashi1, Taisuke Yamamoto1, Makoto Abe1, Naohito Kimura1, Nobuyuki Kimura1, Takayuki Sawada1, Kazuhiko Suzuki1, Kazuaki Imai1
△	6	Optical Properties and Structural Characterization of Zn-Cd-Mn-Se DQWs	Univ of Yamanashi1　○Fumiaki Iwasaki1, Masao Hishikawa1, Sakyo Fukasawa1, Tsutomu Muranaka1, Yoichi Nabetani1, Takashi Matsumoto1
△	7	MBE-VLS growth of ZnTe nanowires on ZnTe substrates	Saga Univ1　○Tomohiro Mochinaga1, Hiroshi Ohshita1, Tooru Tanaka1, Katsuhiko Saito1, Qixin Guo1, Mitsuhiro Nishio1
△	8	Self-organization of PbSnTe nanodots and their emission in mid-infrared region	Osaka Inst.of Tech1　○（M1）Yuuki Nakata, Kazuto Koike, Mitsuaki Yano
		Break 15:45〜16:00
△	9	Low Temperature Grown Ga Dope ZnO Films (1) -Electrical Property-	Univ of Yamanshi1, Nakaya Corporation2, Yamanashi Industrial Technology3　○Takahiro Horii1, Shiho Sano1, Tsutomu Muranaka1, Yoichi Nabetani1, Takashi Matsumoto1, Satoshi Hiraki2, Hideaki Furukawa2, Akihiro Fukasawa2, Shingo Sakamoto2, Shigeru Hagihara3, Yuu Kono3, Kazuhiro Kijima3, Osamu Abe3, Kouji Yashiro3
△	10	Low Temperature Grown Ga-doped ZnO Films (2) - XRD Properties -	Univ. of Yamanashi1, Nakaya Corporation2, Yamanashi Industrial Tecnology Center3　○Shiho Sano1, Takahiro Horii1, Tsutomu Muranaka1, Yoiti Nabetani1, Takashi Matsumoto1, Satoshi Hiraki2, Hideaki Furukawa2, Akihiro Fukasawa2, Shingo Sakamoto2, Shigeru Hagihara3, Yu Kono3, Kazuhiro Kijima3, Osamu Abe3, Kozi Yashiro3
	11	Persistent Photoconductivity studies on electron-irradiated single crystal ZnO bulk: Dual light illumination effect	Hosei Univ1, Osaka kyouiku Univ2, KURRI3　○Takahiro Oga1, Yusuke Izawa1, Kazuo Kuriyama1, Kazumasa Kushida2, Xu Q.3
	12	Transient photocurrent characteristics for two ZnO polar faces.4	Akita Prefectural Univ1　○Yousuke Ishiduka1, Hiroyuki Yamaguchi1, Takao Komiyama1, Yasunori Chonan1, Takashi Aoyama1
	13	Investigation of ZnO Thin Film deposited on p-type GaN by Pulse Laser Deposition	Panasonic ATRL1　○Akihiro Itou1, Hiroyuki Tanaka1, Nobuaki Nagao1
	14	ZnO nanorods are fabricated by Solid Source CVD method using Au nanoparticles as catalyst	Univ. of Tokyo.1, Hokkaido Univ.2　○Sawako Miyamoto1, Tetsuya Hasegawa1, Toshiki Sakai2, Hajime Kiyono2, Hiroyuki Takahashi2, Tetsu Yonezawa2, Toshihiro Shimada2
15.3 III-V Epitaxial Growth
Sept. 14 9:30〜18:00
14a-ZV - 1〜11
	1	Optical characterization of InGaAs/InAlAsP multiple quantum wells	Frontier Science Innovation Center→FSIC1, Graduate School of Engineering, Osaka Prefecture University→Osaka Prefecture Univ.2　○Takako Yamamoto1,2, Yuichi Kawamura1,2
△	2	Field Effect of Asymmetric Structure InGaAsP/InAlAs/InP QWs	Graduate School of Engineering, Osaka Prefecture Univ.,→OsakaPrefectureUniv.1, Frontier Science Innovation Center→Frontier Science Center2　○Takuya Shouno1,2, Yuichi Kawamura1,2
	3	Adjustment of layer on surface side of sine wave composition profile DBR mirror reflectivity optimization for (In)GaAs QWR VCSELs.	Ehime Univ.1　Satoshi Shimomura1, ○Kota Osaka1
	4	Fabrication of active layer for InGaAs QWR VCSELs	Ehime univ1　○shoji kajitani1, kota osaka, satoshi simomura
	5	Step motion oh QWR laser structure grown on (775)B InP substrate by MBE	Ehime univ.1　○Yoshiatsu Mitsunari1, Naoyoshi Mouri1, Toyokazu Matsugi1, Satoshi Shimomura1
	6	In composition dependency of InGaAs layer surface on (775)B InP substrate	Ehime Uni.1　○Tetsuya Miyata1, Yoshiatsu Mitsunari1, Satoshi Shimomura1
		Break 11:00〜11:15
▲	7	Effect of growth temperature on surface morphology of the homoepitaxial growth of GaAs on (631)A substrates	Ehime Univ.1, IICO、SLP Univ.2, CINVESTAV-IPN3　David Vazquez-Cortez1, Esteban Cruz-Hernandez2, Victor-Hugo Mendez-Garcia2, Maximo Lopez-Lopez3, ○Satoshi Shimomura1
	8	Structural analysis of compositionally graded InxGa1-xAs/GaAs (001) buffer layers by in situ X-ray reciprocal space mapping	Toyota Tech. Inst.1, Univ. of Miyazaki2, JAEA3　○Takuo Sasaki1, Hidetoshi Suzuki2, Masamitu Takahasi3, Seiji Fujikawa3, Yoshio Ohshita1, Masafumi Yamaguchi1
	9	Optical properties of an annealed GaAs quantum well with low-temperaure AlGaAs capping	NIMS1　○（PC）Masafumi Jo1, Takaaki Mano1, Kazuaki Sakoda1
	10	Electrical properties of C60 delta-doped GaAs, AlGaAs layers	Waseda Univ.1, JST PRESTO2, Waseda Univ.3　○Jiro Nishinaga1,2, Yoshiji Horikoshi3
	11	Thermal Behavior of Defects Generated from GaP/Si Heterointerface	Toyohashi Univ. Tech.1, ISSRC2　○Keisuke Yamane1, Hiroshi Okada2,1, Akihiro Wakahara1,2
		Lunch 12:30〜13:30
14p-ZV - 1〜17
	1	Photoreflectance spectra of dilute GaAsN alloys	Saitama Univ.1, IMR Tohoku Univ.2, The Univ. of Tokyo3　○Wataru Okubo1, Akira Ishikawa1, Shuhei Yagi1, Yasuto Hijikata1, Sadafumi Yoshida1, Ryuji Katayama2, Kentaro Onabe3, Hiroyuki Yaguchi1
	2	Effects of uniaxial stress on the luminescence from isoelectronic traps in dilute GaAsN alloys	Saitama Univ.1, The Univ. of Tokyo2, IMR Tohoku Univ.3　○Yuya Arai1, Yuta Endo1, Shuhei Yagi1, Yasuto Hijikata1, Shigeyuki Kuboya2, Kentaro Onabe2, Ryuji Katayama3, Hiroyuki Yaguchi1
	3	Nitrogen concentration dependence of the emission from nitrogen pairs in dilute GaAsN alloys	Saitama Univ.1, ISSP2, Univ. of Tokyo3, IMR Tohoku Univ.4　○Akira Ishikawa1, Shuhei Yagi1, Yasuto Hijikata1, Sadafumi Yoshida1, Makoto Okano2, Toshimitsu Mochizuki2, Masahiro Yoshita2, Hidefumi Akiyama2, Shigefumi Kuboya3, Kentaro Onabe3, Ryuji Katayama4, Hiroyuki Yaguchi1
	4	Single Photon Emission from a single nitrogen-related luminescence center in GaAs	Tsukuba Univ.1, PRESTO-JST2, NIMS3　○Michio Ikezawa1,2, Yoshiki Sakuma3, Yoshinori Sone1, Liao Zhang1, Takenobu Hamano1, Jun Tatebayashi3, Yasuaki Masumoto1
	5	Arrangements of nitrogen atom pairs forming isoelectronic traps in N δ-doped GaAs	Saitama Univ.1, ISSP2, The Univ. of Tokyo3, IMR Tohoku Univ.4　○Shinya Hoshino1, Yuta Endo1, Toshiyuki Fukushima1, Kengo Takamiya1, Shuhei Yagi1, Yasuto Hijikata1, Toshimitsu Mochizuki2, Masahiro Yoshita2, Hidefumi Akiyama2, Shigeyuki Kuboya3, Kentaro Onabe3, Ryuji Katayama4, Hiroyuki Yaguchi1
	6	Photoluminescence from isoelectronic traps in N δ-doped GaAs/AlGaAs heterostructures.	Saitama Univ.1, ISSP2, Univ. of Tokyo3, IMR Tohoku Univ.4, Chulalongkorn Univ.5　○kengo Takamiya1, Yuta Endo1, Toshiyuki Fukushima1, Shinya Hoshino1, Shuhei Yagi1, Yasuto Higikata1, Toshimitsu Mochizuki2, Masahiro Yoshita2, Hidefumi Akiyama2, Shigeyuki Kuboya3, Kentaro Onabe3, Ryuji Katayama4, Sanorpim Sakuntam5, Hiroyuki Yaguchi1
	7	Band Engineering of III-V Quantum System with Atomic Layer Nitrides	Osaka Univ.1　○Fumitaro Ishikawa1, Masato Morifuji1, Kenichi Nagahara1, Masahiko Kondow1
	8	Impact of atomic nitride layer insertion on the band structure of AlGaAs/GaAs quantum well	Osaka Univ.1　○Shinichiro Furuse1, Hiroki Nakamoto1, Fumitaro Ishikawa1, Masahiko Kondow1
		Break 15:30〜15:45
	9	Origin of Temperature Dependence of Photoluminescence Peak Energy in Ga(In)NA	ISIR, Osaka University1, Graduate School of Engineering, Osaka Univ.2　○Shuichi Emura1, Hiroki Nakamoto2, Fumitaro Ishikawa2, Masahiko Kondo２, Hajime Asahi1
	10	Potential of GaInNAs QuantumWell for Its Application to Microfabrication Optical Devices	Osaka Univ.1　Hiroaki Goto1, Hiroki Nakatmoto1, ○Fumitaro Ishikawa1, Masahiko Kondow1
	11	Influence of N-Si bonds in Si-doped GaInNAs(Sb) films	The Univ. of Tokyo, RCAST1, Lawrence Berkeley National Laboratory, USA2　○Naoya Miyashita1, Nazmul Ahsan1, Kin Man Yu2, Wladek Walukiewicz2, Yoshitaka Okada1
▲	12	Photo-modulated reflectance analysis of atomic hydrogen-assisted MBE grown GaNAs alloys	RCAST, The University of Tokyo1, Lawrence Berkeley National Laboratory2, Saga University3　○NAZMUL AHSAN1, NAOYA MIYASHITA1, TOORU TANAKA2,3, KIN MAN YU2, WLADEK WALUKIEWICZ2, YOSHITAKA OKADA1
	13	MOVPE growth of InGaAsN films on Ge (001) substrates (2)	Tokyo Univ.1, Chulalongkorn Univ.2　○Takehiko Kikuchi1, Quang Tu Thieu1, Hiroaki Kato1, Shigeyuki Kuboya1, Sakuntam Sanorpim2, Kentaro Onabe1
	14	Influence of lattice constraint from substrate on N composition in GaAsN grown by CBE	RIAM Kyushu Univ.1, Toyota Tech. Inst.2, Tokyo Univ. A.&T.3　○（PC）Jun Kawano1, Kazuma Ikeda1,2, Yoshihiro Kangawa1, Koichi Kakimoto1, Akinori Koukitu3
	15	Stable position of N in GaAsN affected by lattice constraint	Toyota Tech. Inst.1, RIAM Kyushu Univ.2　○Kazuma Ikeda1, Nobuaki Kojima1, Yoshihiro Kangawa2, Koichi Kakimoto2, Yoshio Ohshita1, Masafumi Yamaguchi1
△	16	Effects of off angle substrates on hole mobility in GaAsN grown by chemical beam epitaxy	Toyota Tech. Inst.1, IR Organization Univ. of Miyazaki2　○（D）Makoto Inagaki1, Hidetoshi Suzuki2, Takahiko Honda1, Tomohiro Tanaka1, Kazuma Ikeda1, Suguru Wada1, Nobuaki Kojima1, Yoshio Ohshita1, Masafumi Yamaguchi1
	17	Characterization of GaPN films by capacitance-voltage method	AIST1　○Isao Sakata1, Zhengxin Liu, Hitoshi Kawanami
15.3 III-V Epitaxial Growth
Sept. 15 9:30〜18:00
15a-ZV - 1〜11
	1	Increase of Spectral Width of Stacked InAs Quantum Dots on GaAs by Contralling Spacer Layer Thickness	Nagoya Univ.1　○Kazuma Tani1, Shingo Fuchi1, Toru Ujihara1, Yoshikazu Takeda1
	2	Isolation and Distribution of Photoluminescence Emissions from InAs Quantum Dots over a Wide-Wavelength Range	NanoQuine, Univ. of Tokyo1, NEC Corp.2, IIS, Univ. of Tokyo3　○Shunsuke Ohkouchi1, Naoto Kumagai1, Masayuki Shirane1,2, Yuichi Igarashi1,2, Masahiro Nomura1, Yasutomo Ota1,3, Shinichi Yorozu1,2, Satoshi Iwamoto1,3, Yasuhiko Arakawa1,3
	3	Multi-color QDs growth for spectrum-shape-controlled broadband light source	Wakayama Univ.1, NEC Corp.2, NIMS3, Univ. Sheffield4　○Nobuhiko Ozaki1, Koichi Takeuchi1, Shunsuke Ohkouchi2, Naoki Ikeda3, Yoshimasa Sugimoto3, Kiyoshi Asakawa3, Richard Hogg4
	4	Electric properties of Er-doped InAs quantum dots with strain-relaxed barriers	Univ.of Tokushima1　○hyuga ueyama1, tomoya takahashi1, ken morita1, takahiro kitada1, toshiro isu1
	5	Growth of InAs quantum dots with various charged states utilizing concentric distribution on a wafer	NanoQuine, Univ. of Tokyo1, NEC, Green lab.2, IIS, Univ. of Tokyo3　○Naoto Kumagai1, Shunsuke Ohkouchi1, Masayuki Shirane1,2, Yuichi Igarashi1,2, Masahiro Nomura1, Yasutomo Ota1,3, Shinichi Yosozu1,2, Satoshi Iwamoto1,3, Yasuhiko Arakawa1,3
		Break 10:45〜11:00
	6	PL properties at Room Temperature of low-density InAs Quantum dots on GaAs(001) fabricated by MBE(5)	Pioneer1, NICT2, Univ.Tokyo3　○Yoshinori Sawado1, Katsumi Yoshizawa1, Kouichi Akahane2, Naokatsu Yamamoto2, Tadashi Kawazoe3, Motoichi Ohtsu3
	7	Observation of PL of InAs QDs in mesa structures on GaAs substrate at room temperature 2	Pioneer1, NICT2, Univ.Tokyo3　○Katsumi Yoshizawa1, Yoshinori Sawado1, Saburo Aso1, Yasutoshi Hosoda1, Koichi Akahane2, Naokatsu Yamamoto2, Tadashi Kawazoe3, Motoichi Ohtsu3
	8	Mechanism of photoluminescence intensity enhancement in directly Si-doped InAs QDs	Kobe Univ.1　○（P）Tomoya Inoue1, Kengo Sasayama1, Takashi Kita1
	9	Optical gain of multi-stacked InAs quantum dots by strain-compensation technique	The Univ. of Tokyo, School of Engineering1, The Univ. of Tokyo, RCAST2, NICT3　○Ayami Takata1,2,3, Kouichi Akahane2,3, Naokatsu Yamamoto3, Yoshitaka Okada1,2
	10	Stacking number dependence of intensity characters from InGaAs QDs grown with a higher rate	Tokyo Metropolitan Univ.1, NICT2　○Ｆｕｍｉｈｉｋｏ Tanoue1, Hiroharu Sugawara1, Kouichi Akahane2, Naokatsu Yamamoto2
	11	Fabrication of 1.06-μm InGaAs/GaAs high-density-quantum-dot lasers by MBE	NanoQuine, Univ. of Tokyo1, IIS, Univ. of Tokyo2, QD Laser, Inc.3, Fujitsu Laboratories Ltd.4　○Katsuyuki Watanabe1, Tomoyuki Akiyama1,4, Yoshitaka Yokoyama3, Keizo Takemasa3, Kenichi Nishi1,3, Yu Tanaka1,3,4, Mitsuru Sugawara1,3, Yasuhiko Arakawa1,2
		Lunch 12:30〜13:30
15p-ZV - 1〜17
△	1	Self-formation of in-plane ultra-high density InAs quantum-dots and measurements of their carrier lifetime	Univ. of Electro-Communications1　○Jun Ohta1, Koichi Yamaguchi1
	2	High-density and high-uniformity growth of self-assembled InAs quantum dots	Univ. of Electro-Communications1　○Yutaka Kanemaru1, Naoki Kakuda1, Koichi Yamaguchi1
	3	Self-formation control of low-density InAs quantum dots by intermittent supply method(5)	Univ. of Electro-Communications1　○Yoshihide Ogawa1, Takuya Yanagisawa2, Koichi Yamaguchi3
	4	Influence of in-situ CBrCl3 etching on the size and density of InAs dots	Univ. of Electro-Communications1　○Hiroshi Imanishi1, Atsushi Koizumi1, Kazuo Uchida1, Shinji Nozaki1
	5	Influence of As4 flux on generation of nuclei of InAs quantum dots on GaAs (001) during MBE growth	Toyota Tech. Inst.1　○Takeo Shirasaka1, Kenichi Shimomura1, Itaru Kamiya1
	6	MOVPE growth and characterization of In(Ga)As-quantum dots using Bi as a surfactant IV	Hirosaki Univ.1, NTT Basic Res. Labs.2　○Hiroshi Okamoto1, Takehiko Tawara2, Kouta Tateno2, Hideki Gotoh2, Hidehiko Kamada2, Tetsuomi Sougawa2
	7	Hydrogen passivation effect to InAs/GaAs quantum dot on the GaInNAs buffer grown by MOCVD	精研1　○Kosuke Nemoto1, Ryoichiro Suzuki1, Tomoyuki Sengoku1, Satoru Tanabe1, Rei Nishio1, Fumio Koyama1, Tomoyuki Miyamoto1
	8	Multiple staking of columnar quantum dots with strain-modulated side-barriers	PETRA1, Fujitsu Ltd2, Fujitsu Laboratories Ltd3　○Shigekazu Okumura1,2, Nami Yasuoka1,2, Kenichi Kawaguchi3, Yu Tanaka1,2, Mitsuru Ekawa3
	9	Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs	NIMS1, Toyota Tech. Inst.2　○Takuya Kawazu1, Hiroyuki Sakaki1,2
		Break 15:45〜16:00
	10	in situ STM observation of site-controlled nano-dot fabrication during MBE growth	Anan Natl. Coll. Tech.1　○Takashi Toujyou1, Shiro Tsukamoto1
▲	11	MOCVD growth of site-controlled quantum dots on substrate patterned by thermal etching	NanoQuine, Univ. of Tokyo1, IIS,Univ. of Tokyo2, RCAST, Univ. of Tokyo3　○Stephane FAURE1, Denis GUIMARD1,2, Masao Nishioka2, Satomi Ishida3, Yasuhiko Arakawa1,2
	12	Shape Control of InAs/GaAs S-K dots by MBE Selective growth method	Waseda　University1　○Naoyuki Watanabe1, Yuki Wakabayashi1, Hiroaki Serizawa1, Katsuyuki Utaka1
	13	Shape control of GaAs quantum dots using a thin AlGaAs capping layer	NIMS1　○（PC）Masafumi Jo1, Takaaki Mano1, Kazuaki Sakoda1
	14	Fabrication of InAs ring structure on InGaAs/InP by droplet epitaxy	NIMS1, TTI2　○Takeshi Noda1, Takaaki Mano1, Kazuaki Sakoda1, Hiroyuki Sakaki1,2
	15	MBE-VLS growth of catalyst-free InAs nanowires on Si substrate	Nagoya Univ.1, Aichi Inst. of Tech.2　○Masahito Yamaguchi1, Isao Horiuchi1, Ji-Hyun Paek1, Nobuhiko Sawaki2
	16	Fabrication, structural analyses and optical properties of self-catalyzed GaInP/GaP double-heterostructure core-shell nanowires grown on Si substrates	NIMS1, UCLA2　○（P）Jun Tatebayashi1, Yoshiki Sakuma1, Kazuaki Sakoda1, Lin Andrew2, Hicks Robert2, Huffaker Diana2
	17	Growth of InGaAs Nanowires on Si(111) Substrate by Selective-Area MOVPE	GS-IST, RCIQE, Hokkaido Univ.1, JST-PRESTO2　○Katsuhro Tomioka1,2, Masatoshi Yoshimura1, Junichi Motohisa1, Shinjiroh Hara1, Kenji Hiruma1, Takashi Fukui1
15.3 III-V Epitaxial Growth
Sept. 16 10:00〜17:15
16a-ZV - 1〜10
	1	Fabrication and evaluation of high-density quantum dots solar cell grown on GaAs (311)B substrate	Univ. of Tsukuba, Inst. of Applied Physics1, The Univ. of Tokyo, RCAST2, The Univ. of Tokyo, School of Engineering3　○Yasushi Shoji1,2, Ryuji Oshima2,3, Ayami Takata2,3, Takayuki Morioka2,3, Yoshitaka Okada2,3
	2	Multi-stacked InAs/GaNAs quantum dots with direct Si doping for use in intermediate band solar cell	The Univ. of Tokyo, School of Engineering1, The Univ. of Tokyo, RCAST2, Univ. of Tsukuba, Inst. of Applied Physics3, Kobe university, Graduate school of Engineering4　○Takayuki Morioka1,2, Ryuji Oshima1,2, Ayami Takata1,2, Yasushi Shoji2,3, Tomoya Inoue4, Takashi Kita4, Yoshitaka Okada1,2
	3	Optical characteristics of multi-stacked InAs/GaNAs quantum dot solar cell structure	The Univ. of Tokyo, RCAST1, The Univ. of Tokyo, School of Engineering2, Saitama Univ.3, NICT4　○Ryuji Oshima1,2, Ayami Takata1,2, Shuhei Yagi3, Kouichi Akahane4, Ryo Tamaki2, Kenjiro Miyano1, Yoshitaka Okada1,2
△	4	Impurity effect on GaAs solar cells grown by high-material-efficiency MOVPE	The Univ. of Tokyo1, The Univ. of Tokyo, RCAST2　○Ryusuke Onitsuka1, Masakazu Sugiyama1, Yoshiaki Nakano2
	5	Interface modification in strain-balanced superlattice solar cells with MOVPE	RCAST, Univ. of Tokyo1, School of Eng. Univ. of Tokyo2　Yungpeng Wang1, ○Masakazu Sugiyama2, Yoshiaki Nakano1
	6	Examination of abruptness of hetero-interfaces in InGaAs/GaAsP strain-balanced superlattice grown by MOVPE	School of Eng. Univ. of Tokyo1, RCAST, Univ. of Tokyo2　○Masakazu Sugiyama1, Yungpeng Wang, Yoshiaki Nakano
△	7	Complete coverage of Si(111) growth windows with InAs and its effect of InGaAs lateral growth in micro-channel selective area MOVPE	Univ. of Tokyo1, RCAST2　○Yoshiyuki Kondo1, Momoko Deura1, Mitsuru Takenaka1, Shinichi Takagi1, Yoshiaki Nakano1,2, Masakazu Sugiyama1
	8	Dependence of InAs growth on treatment condition of Si surface using micro-channel selective-area MOVPE	Univ. of Tokyo1, RCAST2　○（DC）Momoko Deura1, Yoshiyuki Kondo1, Mitsuru Takenaka1, Shinichi Takagi1, Yoshiaki Nakano1,2, Masakazu Sugiyama1
	9	Fabrication of Fine Ga0.5In0.5P Ridge Structures by Selective Area MOVPE Growth	AIST1　JongUk Seo1, ○Xuelun Wang1
	10	Low specific contact resistance using heavily Zn-doped InGaAs grown by MOVPE with Sb surfactant	NTT Photonics Lab.1　○Tomonari Sato1, Manabu Mitsuhara1, Ryuzo Iga1, Shigeru Kanazawa1, Yasuyuki Inoue1
		Lunch 12:30〜13:30
16p-ZV - 1〜14
	1	X-ray CTR scattering analysis on AlAsSb/InGaAs quantum well interfaces for ultra fast optical switch	Graduate School of Engineering, Nagoya Univ.1, VBL, Nagoya Univ.2, AIST3　○（M1）Masanori Masuda1, Masao Tabuchi2, Shinichiro Gozu3, Yoshikazu Takeda1
	2	Optical absorption property of In0.64}Ga0.46As/AlxGa1-xAs x≦0.2/AlAsSb coupled double quantum wells	AIST1　○Shinichiro Gozu1, Teruo Mozume1, Hiroshi Ishikawa1
	3	Growth of InAsSb alloys on GaAs for photodetectors	HPK1　○AKIMASA TANAKA1, TAKAYUKI MIYAKE1, DAISUKE SUMURA1
	4	Liquid Phase Electro-Epitaxy of GaSb (001) − Effect of current on the growth −	Meijo Univ.1　○Hidejiro Sato1, Haruki Kojima1, Shigeya Naritsuka1, Takahiro Maruyama1
	5	Thermal annealing induced structural changes of TlInGaAsN	ISIR, Osaka Univ.1　○Kang Min Kim1, Shigehiko Hasegawa1, Hajime Asahi1
	6	Structural evaluation of MBE-grown GaAs1-xBix mixed crystals by TEM	Kanazawa Inst. of Tech.1, Kyoto Inst. of Tech.2　○Osamu Ueda1, Yoriko Tominaga2, Noriaki Ikenaga1, Masahiro Yoshimoto2, Kunishige Oe2
	7	MBE growth of GaAsBi/GaAs superlattices and substrate temperature dependence	Ehime Univ1　Satosi Shimomura1, ○Saburou Tanaka1
		Break 15:15〜15:30
	8	Suppression of hillock formation for InAs on GaAs(111)A substrate by MBE	Waseda Univ.1, JST PRESTO2　○Kazutaka Iga1, Jiro Nishinaga1,2, Marlene Zander1, Yoshiji Horikoshi1
▲	9	Selective area epitaxy of InAs on GaAs(001) by migration-enhanced epitaxy	Waseda Univ.1, Kagami Memorial Lab.2　○Marlene Zander1,2, Jiro Nishinaga1,2, Yoshiji Horikoshi1,2
	10	Study of InSb Growth on Patterned SiO2/Si Substrate by Molecular Beam Epitaxy I	Tokyo University of Science1　○Yuichi Nishino1, Tomoaki Iida1, Shinsuke Hara1, Hiroki Fujishiro1
△	11	Study of InSb Growth on Patterned SiO2/Si Substrate by Molecular Beam Epitaxy II	Tokyo Univ. of Science1　○Tomoaki Iida1, Yuuiti Nishino1, Shinsuke Hara1, Hiroki Fujishiro1
	12	Size-dependent self-aligned GaAs faceting control by selective thermal etching in UHV	Kwansei Gakuin Univ.1　○（M2）Yuki Hirokawa, Taiki Goto, Asuka Ishiwatari, Shoji Ushio, Kazuhiro Matuda, Tadaaki Kaneko
	13	A role of oxide mask functionality for the formation of faceted structures during MBE-GaAs selective area growth	Kwansei Gakuin University1　○（M1C）Syota Hayashi1, Yuki Hirokawa1, Taiki Goto1, Shoji Ushio1, Kazuhiro Matsuda1, Tadaaki Kaneko1
	14	MBE-AlAs selective area growth on Si (100) for studying thermal stability of GaAs oxide mask directly modified by low energy electron beam irradiation	Kwansei Gakuin Univ.1　○（M2）Taiki Goto1, Yuma Yamamoto1, Yuki Hirokawa1, Shoji Ushio1, Kazuhiro Mazda1, Tadaaki Kaneko1
15.4 III-V Nitride Epitaxial Growth
Sept. 14 9:00〜11:45
14a-A - 1〜10
	1	Determination of Acoustical Physical Constants of GaN Single Crystals by the Ultrasonic Microspectroscopy Technology	Tohoku Univ.1　○Yuji Ohashi1, Jun-ichi Kushibiki1
	2	Formation of Free-standing GaN Film Using beta-Ga2O3 Layer and ZnO Sacrificial Layer	Ishinomaki Senshu Univ.1　○Shinji Nakagomi1, Naoto Miura1, Yoshihiro Kokubun1
	3	Formation of a thin GaN layer on the surface of AlN particles by chemical vapor deposition	Res. Inst. of Elec., Shizuoka Univ.1　○Tatsuhiro Mori1, Takayoshi Kobayashi1, Yasumasa Kawanishi1, Hiroko Kominami1, Yoichiro Nakanishi1, Kazuhiko Hara1
	4	Hydride vapor-phase epitaxy of GaN using GaCl3	Tokyo Univ. of Agri. & Tech.1　○Takayoshi Yamane, Koshi Hanaoka, Hideaki Kondoh, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu
	5	Vapor phase growth of GaN (10-10) by the raction between Ga2O vapor and NH3	Guraduate School of Engineering, Osaka Univ.1, Itochu Plastics Inc.2　○Tomoaki Sumi1, Yuan Bu1, Akira Kitamoto1, Mamoru Imade1, Masashi Yoshimura1, Yasuo Kitaoka1, Takatomo Sasaki1, Yusuke Mori1, Masashi Isemura2
		Break 10:15〜10:30
	6	Growth of hexagonal prismatic GaN crystals grown by Ca-doped Na flux method	Osaka Univ.1　○Yusuke Konishi1, Hiroshi Ukegawa1, Taku Fujimori1, Hideo Takazawa1, Kosuke Murakami1, Naoya Miyoshi1, Mamoru Imade1, Masashi Yoshimura1, Yasuo Kitaoka1, Takatomo Sasaki1, Yusuke Mori1
	7	Growth habit of GaN crystals grown by Ba-doped Na flux method	Osaka Univ.1　○Hiroshi Ukegawa1, Yusuke Konishi1, Taku Fujimori1, Hideo Takazawa1, Kosuke Murakami1, Naoya Miyoshi1, Mamoru Imade1, Masashi Yoshimura1, Yaasuo Kitaoka1, Takatomo Sasaki1, Yusuke Mori1
△	8	Bulk Growth of GaN single crystal grown on a rod-shaped seed by Na flux method	Osaka Univ.1　○Kousuke Murakami1, Hideo Takazawa1, Naoya Miyoshi1, Mamoru Imade1, Masashi Yoshimura1, Yasuo Kitaoka1, Takatomo Sasaki1, Yusuke Mori1
	9	Ammonothermal growth of wurtzite GaN crystals using an NH4I mineralizer	IMRAM Tohoku Univ.1, IMR Tohoku Univ.2, WPI-AIMR3　○Yuji Kagamitani1, Taketo Kuribayashi1, Koji Hazu1, Takeyoshi Onuma1, Daisuke Tomida1, Rayko Simura2, Shigefusa Chichibu1, Kazumasa Sugiyama2, Chiaki Yokoyama1, Toru Ishiguro1, Tsuguo Fukuda3
	10	Characterization of ammonothermal GaN grown using in-autoclave synthesized acidic mineralizers and GaN homoepitaxial layers grown by MOVPE	IMRAM, Tohoku Univ.1, WPI-AIMR, Tohoku Univ.2　○Shigefusa Chichibu1, Yuji Kagamitani1, Kouji Hazu1, Takeyoshi Onuma1, Tohru Ishiguro1, Tsuguo Fukuda2
15.4 III-V Nitride Epitaxial Growth
Sept. 14 9:00〜17:45
14a-C - 1〜11
	1	Correaltion between Growth Mode and Optical Properties of 1ML-InN/GaN Quantum Nanostructure grown by MOVPE	Chiba Univ.1, Chiba Univ.VBL2　○Hiroshi Yamamoto1, Atsushi Ueda1, Tatsuya Ryuzaki1, Kazuhide Kusakabe1,2, Yoshihiro Ishitani1,2, Akihiko Yoshikawa1,2
	2	Temperature dependence of photoluminescence properties in N-polar Mg doped InN	Chiba Univ.1, Chiba Univ. VBL2, Beijing Univ.3　○Daichi Imai1, Yoshihiro Ishitani1,2, Masayuki Fujiwara1, Kazuhide Kusakabe1,2, Akihiko Yoshikawa1,2, Wang Xinqiang3
	3	Raman scattering characterization of InN films grown by PR-MOVPE	Kyoto Inst. Technology.1, Wakayama Univ.2, Tohoku Univ.3, JST-CREST4　○Yasuhito Kamei1, Junggon Kim1,4, Atsuhito Kimura1, Noriyuki Hasuike1,4, Kenji Kisoda2, Hiroshi Harima1,4, Yuhuai Liu3,4, Takashi Matsuoka3,4
△	4	TEM characterization of microstructure of Mg-doped InN grown using DERI method	Ritsumeikan Univ.1, R-GIRO2, Seoul National Univ.3　○Tsutomu Sakamoto1, Tomohiro Yamaguchi2, Ryosuke Iwamoto1, Tsutomu Araki1, Yasushi Nanishi1,3
	5	RF-MBE growth of InN on GaN buffer layer	Hokkaido Inst, of technology1　○Taisuke Yamamoto1, Takayuki Sawada1, Kazuaki Imai1, Naohito Kimura1
		Break 10:15〜10:30
	6	MBE growth of GaN thin film on carbonized Si(111).	Okayama Univ. of science1, Hokkaido Inst. of technology2　○（M2）Shun-ichiro Nakagawa1, Hirosi Saito1, Masakazu Ohishi1, Kazuaki Imai2
	7	GaN growth on pseudo Al substrates by RF-molecular beam epitaxy	Kogakuin Univ.1　○Masato Hayashi1, Taiga Goto1, Tatsuhiro Igaki1, Satoru Tagucｈi1, Tohru Honda1
	8	Realization of high-growth-rate GaN homoepitaxy by molecular beam epitaxy using high-density nitrogen radical source	Graduate School of Engineering, Nagoya Univ.1, Akasaki Research Center, Nagoya Univ.2, Plasma　Nanotechnology Research Center, Nagoya Univ.3, Faculty of Science and Technology, MeijoUniv.4, NU EcoEngineering Co., Ltd.,5, Katagiri Engineering Co., Ltd6　○Yohjiro Kawai1,2, Yoshio Honda1,2, Masahito Yamaguchi1,2, Hiroshi Amano1,2, Shang Chen1, Hiroki Kondo1, Mineo Hiramatsu4, Masaru Hori1,3, Hiroyuki Kano5, Kouji Yamakawa6, Shouji Den6
△	9	Effect of growth temperature on surface morphology of selective growth of GaN grown by ammonia-based metal-organic molecular beam epitaxy	Meijo University1　○Chiahung Lin1, Ryota Abe1, Takahiro Maruyama1, Shigeya Naritsuka1
	10	Lateral overgrowth accompanying to selective growth of GaN using metal organic molecular beam epitaxy	Meijo University1　○（M2）Ryota Abe1, Chiahung Lin1, Takahiro Maruyama1, Shigeya Naritsuka1
	11	Influence of ion damage and achievement of high quality due to ion reduction on low temperature growth of GaN films on Si substrates by ECR-plasma MBE method	Osaka Inst. of Tech.1, Osaka Inst. of Tech. Appl.Phys.2　○Tokuo Yodo1, Yoshiyuki Harada2
		Lunch 12:00〜13:00
14p-C - 1〜17
△	1	Anomalous crystalline orientation dependence of Ga incorporation in high-Al content AlGaN grown by MBE	Kyoto Univ.1, PESEC2　○Shunsaku Ueta1, Masahiro Horita1, Tsunenobu Kimoto1,2, Jun Suda1
	2	Growth of Si doped cubic AlGaN films on MgO(001) substrate by RF-MBE	The Univ. of Tokyo1　○Masahiro Kakuda1, Shigeyuki Kuboya1, Kentaro Onabe1
	3	Growth of GaN nano-rods on Si(111)by RF-plasma-assisted Molecular Beam Epitaxy	Graduate School of Information Science and Technology, Hokkaido Univ.1, RCIQE, Hokkaido Univ.2　○（DC）Nobuhiro Isomura1, Tamotsu Hasizume2, Junichi Motohisa1
	4	Growth and characterization of GaGdN/AlGaN MQDisks (2)	Osaka Univ., ISIR1　○Hiroyuki Tambo1, Mai Uenaka1, Yi-Kai Zhou1, Shuichi Emura1, Shigehiko Hasegawa1, Hajime Asahi1
	5	InGa(Gd)N/Ga(Gd)N Superlattice Heterostructures Prepared by MBE	ISIR Osaka Univ.1　○SitiNooraya MohdTawil1, Krishnamurthy Daivasigamani1, Rina Kakimi1, Shuichi Emura1, Shigehiko Hasegawa1, Hajime Asahi1
		Break 14:15〜14:30
	6	Structural Analysis of GaGdN by Reciprocal Space Mapping.	ISIR, Osaka Univ.1, Grad. Sch. Eng., Osaka Univ.2　○Kotaro Higashi1, Daijiro Abe1, Yohsuke Mitsuno1, Sachio Komori1, Fumitaro Ishikawa2, Shigehiko Hasegawa1, Hajime Asahi1
	7	Positron annihilation study on vacancy-type defects in MBE-grown GaCrN films (2)	JAEA1, Osaka Univ. ISIR2　○（P）Atsushi Yabuuchi1, Masaki Maekawa1, Atsuo Kawasuso1, Shigehiko Hasegawa2, Yi-Kai Zhou2, Hajime Asahi2
	8	S-termination effects of Pd-immobilized GaN catalysts	Anan Natl. Col. Tech.1　○Motoi Hirayama1, Yukiko Ueta1, Tomoya Konishi1, Shiro Tsukamoto1
	9	Growth of GaN-based single-crystalline layer by UHV sputtering method	Tokyo Denki Univ1, Bruker AXS K.K.2　○Kosuke Sagae1, Yuki Oyamada1, Hiroyuki Shinoda1, Nobuki Mutsukura1, Hitoshi Morioka2, Keisuke Saito2
	10	Characterization of annealed GaN-based single-crystalline layer grown by sputtering method	Tokyo Denki Univ1, Bruker AXS K.K.2　○Yuki Oyamada1, Kosuke Ｓａｇａｅ1, Hiroyuki Shinoda1, Nobuki Mutsukura1, Hitoshi Morioka2, Keisuke Saito2
		Break 15:45〜16:00
	11	AlN homo-epitaxial growth on sublimation-AlN substrate by low-pressure HVPE	Mie Univ.1, Nagoya Inst.Tech2, Yamaguchi Univ.3　○Takuya Nomura1, Kenta Okumura1, Hideto Miyake1, Kazumasa Hiramatsu1, Osamu Eryuu2, Yoichi Yamada3
	12	ELO-AlN on period trench patterned AlN/Sapphire by Low-Pressure HVPE	Mie Univ.1, RIKEN2　○Kohei Fujita1, Hideto Miyake1, Kazumasa Hiramatsu1, Jyun Norimatsu2, Hideki Hirayama2
	13	Control of in-plane matching of c-plane AlN layers grown on a-plane sapphire substrates by HVPE	Tokyo Univ. of Agri. & Tech.1, Tokuyama Corporation2　○（D）Jumpei Tajima1, Chikashi Echizen1, Rie Togashi1, Hisashi Murakami1, Kazuya Takada2, Yoshinao Kumagai1, Akinori Koukitu1
	14	Self Epitaxial Lateral Overgrowth of AlN on 6H-SiC(0001) using non c-axis orientated AlN grains	Tokyo Univ. of Agri. & Tech.1, Tokuyama Corporation2　○Shuhei Sekiguchi1, Masanari Ishizuki2, Rie Togashi1, Hisashi Murakami1, Yoshinao Kumagai1, Kazuya Takada2, Akinori Koukitu1
△	15	Growth of Bulk AlN Single Crystal using Carbothermic Reduced Alumina Vapor Deposition	Tohoku Univ.1, Tokuyama2　○Mikako Kato1, Hidekazu Kobatake1, Makoto Ohtsuka1, Hiroyuki Fukuyama1, Takeshi Hattori2, Masanobu Azuma2, Kazuya Takada2
	16	Nitridation of c-plane sapphire surface by high-temperature heating	Tokyo Univ. of Agri. & Tech.1, Tokuyama Corporation2　○Takahiro Igi1, Masanari Ishizuki2, Rie Togashi1, Hisashi Murakami1, Yoshinao Kumagai1, Kazuya Takada2, Akinori Koukitu1
	17	Homoepitaxial growth of AlN on nitrided sapphire using Ga-Al binary solution	IMRAM, Tohoku Univ.1, Sumitomo Metal Mining Co., Ltd.2　○（PC）Masayoshi Adachi1, Kazuo Maeda2, Akikazu Tanaka2, Hidekazu Kobatake1, Hiroyuki Fukuyama1
15.4 III-V Nitride Epitaxial Growth
Sept. 14 13:00〜18:00
14p-NJ - 1〜18
	1	Growth of In-rich InGaN active layer on selective-area growth of GaN nanocolumns by rf-MBE	Sophia Univ.1, Sophia NTRC2, CREST JST3　○Koichi Kamiyama1, Katsumi Kishino1,2,3, Junpei Kamimura1,3, Ryohei Inoue1, Akihiko Kikuchi1,2,3
	2	Selective-area growth of In-rich InGaN nanocolumns by RF-MBE	Sophia Univ.1, Sophia Nanotech. RC2, CREST JST3　○（M1）Ryohei Inoue1, Katsumi Kishino1,2,3, Jumpei Kamimura1,3, Kouichi Kamiyama1, Akihiko Kikuchi1,2,3
△	3	Approach for thick InGaN growth using DERI method	Ritsumeikan Univ. Dept. of Photonics1, Ritsumeikan Univ. R-GIRO2, Seoul National Univ.3　○Nao Uematsu1, Tomohiro Yamaguchi2, Ryosuke Iwamoto1, Tsutomu Sakamoto1, Tatsuya Fujishima1, Tsutomu Araki1, Yasushi Nanishi1,3
△	4	InGaN growth and In composition control using DERI method	Ritsumeikan　Univ., Dept. of Photonics1, Ritsumeikan Univ., R-GIRO2, Seoul National Univ.3　○Ryosuke Iwamoto1, Tomohiro Yamaguchi2, Nao Uematsu1, Tsutomu Sakamoto1, Tatsuya Fujishima1, Tsutomu Araki1, Yasushi Nanishi1,3
	5	Regularly arranged InGaN/GaN nano-parasols grown by selective area growth of rf-MBE	Sophia Univesity1, Sophia Nanotechnology Research Center2, CREST Japan Science and Technology Agency3　○Hiroshi Hata1, Katsumi Kishino1,2,3, Tetsuya Kouno1,3, Akihiko Kikuchi1,2,3
		Break 14:15〜14:30
	6	Novel Oxynitride InGaON Semiconductor Grown by RF-MBE (1) - Controlling of O/N Composition Ratio in Ternary InON System -	Graduate School of Engineering, Chiba Univ.1, VBL, Chiba Univ.2　○Yohei Takahashi1, Tatsuya Honma1, Kazuhide Kusakabe1,2, Yoshihiro Ishitani1,2, Akihiko Yoshikawa1,2
	7	Novel Oxynitride InGaON Semiconductor Grown by RF-MBE (2) - Growth of InN/InON Heterostructure -	Graduate School of Engineering, Chiba Univ.1, VBL, Chiba Univ.2　○Tatsuya Honma1, Yohei Takahashi1, Kazuhide Kusakabe1,2, Yoshihiro Ishitani1,2, Akihiko Yoshikawa1,2
△	8	Application of Wet Etching for InN Device Fabrication	Ritsumeikan Univ., Dept. of Photonics1, ROSE2, R-GIRO3, NTT Photonics Labs., NTT Corporation4, Seoul National Univ.5　○Akira Miki1, Morimoto Kenta1, Narihiko Maeda2,4, Tomohiro Yamaguchi3, Tsutomu Araki1, Yasushi Nanishi1,5
	9	Epitaxial Lateral Overgrowth of InN by RF-MBE	Sophia Univ.1, Sophia Nanotech. RC2, CREST JST3　○（D）Jumpei Kamimura1,3, Katsumi Kishino1,2,3, kouichi Kamiyama1, Inoue Ryohei1, Kikuchi Akihiko1,2,3
▲	10	MBE Growth and Characterization of InN Quantum Dots	ISIR, Osaka Univ.1　○（PC）Krishnamurthy Daivasigamani1, Siti Nooraya Md Tawil1, Shigehiko Hasegawa1, Hajime Asahi1
	11	Polarity control and growth mode of InN films on YSZ substrates	The Univ. of Tokyo1, The Univ. of Tokyo2, The Univ. of Tokyo3, JST-CREST4　○Atsushi Kobayashi1, Kana Okubo2, Jituso Ohta3, Hiroshi Fujioka3,4, Masaharu Oshima1,4
	12	Epitaxial growth of In-rich m-plane InAlN films on ZnO substrates	The University of Tokyo1, The University of Tokyo2, JST-CREST3　○Tomofumi Kajima1, Kouhei Ueno2, Atsushi kobayashi1, Jitsuo Ohta2, Hiroshi Fujioka2,3, Masaharu Oshima2,3
		Break 16:15〜16:30
	13	Effects of Cp2Mg supply on MOVPE growth behavior of InN	Univ. of Fukui1　○（PC）Ken-ichi Sugita1, Akihiro Hashimoto1, Akio Yamamoto1
	14	N-polar 1ML-InN/GaN Nanostructures Grown by MOVPE	Graduate scool of electrical and Electronic Engineering, Chiba University1, VBL, Chiba University2　○Atsushi Ueda1, Hiroshi Yamamoto1, Tatsuya Ryuzaki1, Kazuhide Kusakabe1,2, Yoshihiro Ishitani1,2, Akihiko Yoshikawa1,2
	15	Crystal growth of InN by electric field MOCVD	Tokai Univ.1　○Yuichi Ota, Takashi Inushima
	16	MOVPE growth of semi-polar InN on GaAs(110) substrates	Tokyo Univ. of Agri. & Tech.1　○Hisashi Murakami1, Hyunchol Cho1, Mayu Suematsu1, Rie Togashi1, Yoshinao Kumagai1, Akinori Koukitu1
	17	Growth Temperature Dependence of Phase Purity in InN Grown by Pressurized MOVPE	IMR Tohoku Univ.1, Kyoto Inst. Technology2, JST-CREST3　Takeshi Kimura1,3, ○Yuhuai Liu1,3, Yuantao Zhang1,3, Kiattiwut Prasertsuk1, Jung Gon Kim2,3, Noriyuki Hasuike2,3, Hiroshi Harima2,3, Ryuji Katayama1,3, Takashi Matsuoka1,3
	18	Temperature Dependence of Bandgap Energy of InN Grown by Pressurized Reactor MOVPE	IMR, Tohoku Univ.1, JST-CREST2　○Yuhuai Liu1,2, Takeshi Kimura1,2, Yuantao Zhang1,2, Kiattiwut Prasertsuk1, Takashi Hanada1,2, Ryuji Katayama1,2, Takashi Matsuoka1,2
15.4 III-V Nitride Epitaxial Growth
Sept. 15 9:00〜18:45
15a-B - 1〜11
	1	Reconsideration of Stress Effects in Semiconductors with Wurtzite Structure	ISIR, Osaka University1　○Shuichi Emura, Koun Shirai, Hajime Asahi
	2	Ionization Potential of 3d Transition Metal doped-?-N semiconductors	Kyoto Institute of Technology1　○Saki Sonoda1
	3	Optical Absorption Property of 3d Transition Metal doped-?-N Films	Kyoto Institute of Technology1　○Saki Sonoda1
	4	PL excitation spectroscopy of AlGaN epitaxial layers	Yamaguchi Univ.1, Mie Univ.2　○Ryo Kittaka1, Hideaki Murotani1, Hirotaka Muto1, Satoshi Kurai1, Yoichi Yamada1, Hideto Miyake2, Kazumasa Hiramatsu2
△	5	Si concentration dependence of optical polarization in AlGaN ternary alloys	Yamaguchi Univ.1, Mie Univ.2　○Hideaki Murotani1, Ryo Kittaka1, Hirotaka Muto1, Satoshi Kurai1, Yoichi Yamada1, Hideto Miyake2, Kazumasa Hiramatsu2
▲	6	Inhomogeneous Broadening in Al-rich AlGaN/AlN Single Quantum Wells	Kyoto Univ.1　○（P）Ryan Banal1, Mitsuru Funato1, Yoichi Kawakami1
		Break 10:30〜10:45
	7	Complex refractive index of the AlGaN alloy over a wide photon energy region	Fac. Engi., Univ. Fukui1, Fac. Engi., Mie Univ.2　○Hiroki Iwai1, Satoru Oda1, Kazutoshi Fukui1, Hideto Miyake2, Kazumasa Hiramatsu2
△	8	Characterization of optical properties for semipolar AlGaN films on ZnO	IIS, The Univ. of Tokyo1, School of Engineering, The Univ. of Toyo2, JST-CREST3　○（D）Kohei Ueno1, Atsushi Kobayashi2, Jitsuo Ohta1, Hiroshi Fujioka1,3
	9	Structural and optical-polarization properties of In-rich m-plane InGaN films grown on ZnO	The Univ. of Tokyo1, The Univ. of Tokyo2, JST-CREST3　○Hiroaki Tamaki1, Atsushi Kobayashi2, Jitsuo Ohta1, Masaharu Oshima2.3, Hiroshi Fujioka1,3
	10	Optically pumped whispering gallery mode lasing action in a GaN hexagonal microdisk	Sophia Univ.1, Sophia Nano.2, CREST3　○（DC）Tetsuya Kouno1,3, Katsumi Kishino1,2,3, Masaru Sakai1,3, Akihiko Kikuchi1,2,3
	11	Optically pumped laseing property of GaN nanoring resonators	Sophia Univ.1, Sophia Nanotech.2, JST　CREST3　○Takuto Suzuki1, katsumi Kishino1,2,3, Tetsuya Kouno1,3, Akihiko Kikuchi1,2,3
		Lunch 12:00〜13:00
15p-B - 1〜21
	1	A breakdown of the quasicubic approximation in wurtzite structures	Kyoto Univ.1　○Ryota Ishii1, Akio Kaneta1, Mitsuru Funato1, Yoichi Kawakami1
	2	Theoretical Investigation of optical properties on Nonpolar AlGaN/AlN Quantum Wells	Kyoto Univ.1, Kanazawa Inst. Tech.2　○Kazunobu Kojima1, Atsushi Yamaguchi2, Mitsuru Funato1, Yoichi Kawakami1, Susumu Noda1
	3	Theoretical Investigation of the validity of quasicubic approximation	Univ of Tsukuba1, Kanazawa Inst. of Tech2　○Yasuhiro Ebihara1, Kenji Shiraishi1, Atsushi Yamaguchi2
	4	A comprehensive understanding of previously-reported polarization properties in nonpolar and semipolar InGaN quantum wells	Kanazawa Inst. Tech.1, Kyoto Univ.2　○Atsushi A. Yamaguchi1, Kazunobu Kojima2
	5	Dislocation density dependence of recombination dynamics in InGaN-based quantum wells	Yamaguchi Univ.1, Mitsubishi Chemical Corp.2　○Yasuhiro Sudo1, Takakazu Kohno1, Masaki Yamauchi1, Satoshi Kurai1, Yoichi Yamada1, Hiromitsu Kudo2, Hiroaki Okagawa2
△	6	Carrier diffusion dynamics in InGaN SQW studied by spatial and temporal resolved PL spectroscopy - efficiency droop mechanism assessed by SNOM-	Kyoto Univ.1　○Akira Hashiya1, Akio Kaneta1, Mitsuru Funato1, Yoichi Kawakami1
	7	Saturable Absorbing Dynamics of GaInN Multi-Quantum Well Structures	NICHe Tohoku Univ.1, Advanced Materials Labs., Sony Corp.2　○Takao Miyajima1,2, Hideki Watanabe2, Shunsuke Kono1, Tomoyuki Oki2, Rintaro Koda1,2, Masaru Kuramoto1,2, Masao Ikeda1,2, Hiroyuki Yokoyama1
	8	Terahertz reflectance measurements of n,p-type GaN thin wafer	Furukawa Co., Ltd.1, RIKEN Sendai2, Dept. Physics, Tohoku Univ.3, Powdec K. K.4　○Akihide Hamano1, Akira Harako1, Seigo Ohno2,3, Hiroaki Minamide2, Hiromasa Ito2, Yoshiyuki Usuki1, Yasuhumi Watanabe1, Yasunobu Sumida4, Hiroji Kawai4
		Break 15:00〜15:15
△	9	Hydrogen gas evolution by Nitride photocatalyst with micro counterelectrodes	Tokyo Univ. of Science1　○Futami Sano1, Tomoe Hayasi1, Takahiro Koyama1, Akira Hirako1, Katushi Fujii2, Kazuhiro Ohkawa1
	10	Effects of n-type GaN Characteristics for the Time Dependence of Water-Reduced Photocurrent to Produce Hydrogen	CIR, Tohoku Univ.1　○Katsushi Fujii1, Kayo Koike1, Mika Atsumi1, Takenari Goto1, Takafumi Yao1
	11	Epitaxial Growth of GaN Films on Graphite Substrate	Panasonic ATRL1, Panasonic SDRC2　○Akio Matsushita1, Nobuaki Nagao1, Eiji Fujii1, Shinichi Kohda2, Toshiyuki Takizawa2
	12	Fabrication of InGaN solar cells with high In concentrations	The Univ. of Tokyo1, JST-CREST2　○Shigeru Inoue1, Jitsuo Ohta1, Masaki Katoh1, Kazuya Tamura1, Hiroshi Fujioka1,2
	13	Characterization of MQW layer in GaN light emitting diodes by X-ray diffraction	Kobelco research institute, inc.1, Osaka Univ.2　○Hideyuki Taguchi1, Amane Kitahara1, Shuji Kasaishi1, Aya Miyake1, Shugo Miyake1, Tadashi Toyoda1, Akimitsu Nakaue1, Atsushi Nishikawa2, Yasufumi Fujiwara2
△	14	Efficient Planarization of GaN Using Chemical Etching	Osaka Univ.1, Ebara Corp.2　○Shun Sadakuni1, Junji Murata1, Keita Yagi2, Yasuhisa Sano1, Kenta Arima1, Takeshi Okamoto1, kazuma Tachibana1, Kauzto Yamauchi1
	15	Electroluminescence properties of p-GaN/MgO/Alq3 inorganic/organic hybrid devices	Sophia univ.1, Sophia nanotechnol res ctr.2　○Tomoyuki Tsuji1, Akihiko Kikuchi1,2
		Break 17:00〜17:15
	16	Fabrication of light-emitting diode used on nonpolar GaN growth on the patterned sapphire substrate	Grad. School of Sci. & Eng., Yamaguchi Univ.1　○Shinichi Tabuchi1, Akihiro Kurisu1, Narihito Okada1, Kazuyuki Tadatomo1
	17	Regularly arranged InGaN/GaN nanocolumn array green light emitting diodes	Sophia Univ.1, Sophia Nanotechnol. Res. Ctr.2, JST CREST3　○Meiki Goto1, Katsumi Kishino1,2,3, Kouji Yamano1,3, Akihiko Kikuchi1,2,3
	18	Dependence of refractive index of stripe-patterned mask layers on light-extraction efficiency of InGaN Light-Emitting Diodes	Yamaguchi Univ1, CHOSHU INDUSTRY2　○Akimi Uchida1, Yuki Abe1, Narihito Okada1, Kazuyuki Tadatomo1, Koji Ibi2, Yoshi Watabe2
	19	Dependence of the pillar’s height on the output power of the light emitting diodes fabricated on the nano-patterned sapphire substrate	Yamaguchi Univ.1, SCIVAX Corp.2, SAMCO Inc.3　○Taku Shinagawa1, Narihito Okada1, Kazuyuki Tadatomo1, Yutaka Taniguchi2, Hironobu Tamura2, Atsunori Maruno3, Michihiro Hiramoto3
	20	Fabrication of LED on sapphire substrate with ZrO2 layer	Meijo Univ.Fac.Sci.&Tech1, EL-SEED Corp2, Nagoya Univ3　○Kenta Tamura1, Daisuke Iida1, Shuji Yamaguch1, Tosiyuki Kondou2, Motoaki Iwaya1, Tetuya Takeuti1, Satosi Kamiyama1,2, Isamu Akasaki1, Hirosi Amano3
	21	Fabrication of high efficiency LED using moth-eye structure	Fac. Sci. & Tech. Meijo Univ1, EL-SEED Corp2, Dept. Electronics & ARC, Nagoya Univ3　○Hisashi Sakurai1, Toshiyuki Kondo2, Fumiharu Teramae2, Atushi Suzuki2, Tukasa Kitano2, Midori Mori2, Motoaki Iwaya1, Tetuya Takeuchi1, Satoshi Kamiyama1,2, Isamu Akasaki1, Hiroshi Amano3
15.4 III-V Nitride Epitaxial Growth
Sept. 15 9:00〜19:00
15a-C - 1〜12
	1	Growth and Mg doping of InxGa1-xN (x〜0.6) by MOVPE	Univ. of Fukui1, The Kansai EP2　○Toru Hotta1, Kohei Sasamoto1, Ken-ichi Sugita1, Akihiro Hashimoto1, Akio Yamamoto1, Katsuhiro Kinoshita2, Yasuhito Kohji2
△	2	Selective MOVPE of InGaN/GaN MQW on semi-polar GaN stripes (II)	Nagoya Univ.1, Akasaki　Research　Center2　○（D）Tomoyuki Tanikawa1,2, Tasuku Murase1,2, Yoshio Honda1,2, Masahito Yamaguchi1,2, Hiroshi Amano1,2
△	3	Microstructure of GaInN/GaInN superlattice on GaN substrate	Meijo Univ.1, Nagoya Univ.2　○（M1）Toru Sugiyama1, Yasuhiro Isobe1, Yousuke Kuwahara1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1, Hiroshi Amano2
	4	Growth of thick InGaN layer on {11-22} GaN template grown on patterned r-plane sapphire substrate	Grad. School of Sci. & Eng., Yamaguchi Univ.1　○Akihiro Kurisu1, Yuki Abe1, Narihito Okada1, Kazuyuki Tadatomo1
	5	Impact of InGaN growth conditions on structural stability under high temperature process in InGaN/GaN multiple quantum wells	Corporate R&D Center, Toshiba Corp.1　○Tomonari Shioda1, Toshiki Hikosaka1, Yoshiyuki Harada1, Koichi Tachibana1, Naoharu Sugiyama1, Shinya Nunoue1
	6	Multicolor emission from InGaN multiple quantum wells on patterned n-plane sapphire substrate with offset angle	Grad. School of Sci. & Eng., Yamaguchi Univ.1, KYOCERA Corporation2　○Masaki Takami1, Akihiro Kurisu1, Yuki Abe1, Narihito Okada1, Kazuyuki Tadatomo1, Motohiro Umehara2, Toshiyuki Ihara2, Satoru Tubokura2, Wataru Hujita2
		Break 10:30〜10:45
	7	Continuous wavelength modulation of semi-polar InGaN/GaN MQWs with vapor-phase-diffusion-based selective-area pyramidal growth.	Univ. of Tokyo.1, RCAST2　○Tatsuki Fujiwara1, Yoshiaki Nakano2, Masakazu Sugiyama1
	8	In-Situ Monitoring in Backend of GaN Epitaxy on Si by MOVPE	Covalent Materials Corp.1　○Jun Komiyama1, Hiroshi O-ishi1, Ken-ichi Eriguchi1, Akira Yoshida1, Yoshihisa Abe1, Shun-ichi Suzuki1, Hideo Nakanishi1
	9	GaN film by means of voids fabricated by selective-avea growth	Mie Univ.1　○Sumito Ohuchi1, Hideto Miyake1, Kazumasa Hiramatsu1
	10	Curvature anisotropy of a-plane GaN on r-sapphire	Mie　Univ.1, Kyoto Inst. Tech.2　○Bei Ma1, Jicai Zhang1, Hideto Miyake1, Kazumasa Hiramatsu1, Hiroshi Harima2
	11	MOCVD selective are growth of GaN nanowires on sapphire substrates	IIS, Univ. of Tokyo1, NanoQuine, Univ. of Tokyo2　○Kihyun Choi1, Munetaka Arita2, Yasuhiko Arakawa1,2
	12	MOCVD selective area growth of GaN nanowires on 6H-SiC substrates	NanoQuine Univ. of Tokyo1, IIS Univ. of Tokyo2　○Munetaka Arita1, Kihyun Choi2, Yasuhiko Arakawa1,2
		Lunch 12:15〜13:15
15p-C - 1〜21
△	1	GaN-MOVPE simulation considering carbon incroporation	Tokyo Univ. of Science.1　○Kenichi Nakamura1, Akira Hirako1, Kazuhiro Ohkawa1
	2	A Study on Thermal Stability of Silicon and Carbon Co-doping High Resistivity GaN	New Japan Radio1　○Masayuki Fukai1, Shusuke Kakizawa1, Hiroshi Fushimi1
	3	Electrical conductivity of Si-doped boron nitride films grown by FME	NTT BRL1　○Yasuyuki Kobayashi1, Tetsuya Akasaka1
	4	Impurity incorporation (1-101)GaN on patterned Si substrate	Nagoya Univ.1, Akasaki Research Center2　○Kouhei Yamashita, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano
	5	Fabrication of polarity inversion structure of GaN by using Mg-doping in MOVPE	Shizuoka Univ.1, Shizuoka Univ.2, National Institute Materials Science3, Hamamatu　Photonics　K.K.4　○tsuyoshi tachi1, tsutomu nogi1, takayuki nakano2, masatomo sumiya3, tokuaki nihashi4, minoru hagino4, syunro fuke2
	6	Investigation of substrate temperature dependence of spiral and nucleus growth rates of GaN in MOVPE growth	NTT Corp.1　○Tetsuya Akasaka1, Yasuyuki Kobayashi1, Makoto Kasu1
		Break 14:45〜15:00
	7	Low-temperature growth of GaN using catalyst-assisted MOVPE	Univ. of Fukui1　○Kohei Sasamoto1, Toru Hotta1, Mikiyasu Tanaka1, Ken-ichi Sugita1, Akihiro Hashimoto1, Akio Yamamoto1
	8	Improvement of Surface Morphology for MOCVD Re-growth GaN using Ta mask	The Univ. of Tokushima1, The Univ. of Tokushima2　○Kohei Hara1, Yoshiki Naoi1,2, Shiro Sakai1,2
△	9	Optimization of the initial growth of non-polar m-plane and a-plane GaN grown on LPE-GaN substrates by Na flux method	Meijo Univ.1, Nagoya Univ. ARC2, Osaka Univ3　○Yasuhiro Isobe1, Daisuke Iida1, Tatsuyuki Sakakibara1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1, Hiroshi Amano2, Mamoru Imade3, Yasuo Kitaoka3, Yusuke Mori3
	10	Growth of nonpolar GaN on patterned sapphire substrate with nitridation	Grad.School of Sci. & Eng.,Yamaguchi Univ.1　○hiroyasu Oshita, Yuki Abe, Narihito Okada, Kazuyuki Tadatomo
	11	Selective Area Growth of GaN on Shallow Etched Sapphire Substrates	Tokuyama Corp.1, Grad. School of Sci. & Eng., Yamaguchi Univ.2　○Hiroshi Furuya1,2, Narihito Okada2, Kazuyuki Tadatomo2
	12	Influence of MOVPE Growth Condition on Leakage Characteristics of InAlN/GaN Schottoky Contact	NTT PH Labs.1　○Masanobu Hiroki1, Narihiko Maeda1
	13	MOVPE growth of InAlN/InGaN heterostructures with an intermediate In composition range	Univ. of Fukui1　○Mikiyasu Tanaka1, Kohei Sasamoto1, Ken-ichi Sugita1, Akihiro Hashimoto1, Akio Yamamoto1
		Break 16:45〜17:00
	14	Characterization of AlInN epitaxial layer by MOCVD (2)	Meikou Inst.1　○Junki Ichikawa1, Yusuke Sakai1, Zhi Tao Chen1, Kazuhisa Fujita1, Takashi Egawa1
	15	Spectroscopic characterization of AlxGa1-xN films and bandgap variation	Kyoto Inst. Technology1, Wakayama Univ.2, Mie Univ.3　○Atsuhito Kimura1, Junggon Kim1, Yasuhito Kamei1, Noriyuki Hasuike1, Kenji Kisoda2, Hiroshi Harima1, Yuki Shimahara3, Hideto Miyake3, Kazumasa Hiramatsu3
	16	AlGaN/GaN Heterojunction Structure Grown on Single-crystal Diamond (111) Substrate	NTT Basic Research Lab.1　○Kazuyuki Hirama1, Yoshitaka Taniyasu1, Makoto Kasu1
	17	Fabrication of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation	Mie Univ.1, HPK2　○Yuki Shimahara1, Hideto Miyake1, Kazumasa Hiramatsu1, Fumitsugu Fukuyo2, Tomoyuki Okada2, Hidetsugu Takaoka2, Harumasa Yoshida2
▲	18	The morphology and structural properties in two-step growth of m-AlN/GaN structures	NanoQuine, Univ. of Tokyo1, IIS, Univ. of Tokyo2　○Xuelin Yang1, Munetaka Arita1, Yasuhiko Arakawa1,2
	19	Quantum confinement effect in deep-UV region of AlN/GaN short-period superlattices	NTT BRL1　○Yoshitaka Taniyasu1, Makoto Kasu1
△	20	New Nucleation Method by Annealing Mixed-polar AlN Buffer Layer	R-GIRO, Ritsumeikan Univ.1　○Masahito Kurouchi, Misaichi Takeuchi, Eunsook Hwang, Yoshinobu Aoyagi
	21	Raman Scattering Spectroscopy for Epitaxial AlN films	Mie Univ.1, Kyoto Inst Tech.2　○Shibo Yang1, Reina Miyagawa1, Jicai Zhang1, Hideto Miyake1, Kazumasa Hiramatsu1, Hiroshi Harima2
15.4 III-V Nitride Epitaxial Growth
Sept. 16 9:00〜12:30
16a-B - 1〜13
	1	Adjustment of InGaN/GaN MQW nanocolumn cavity structure on AlN/GaN DBR	Sophia Univ.1, Sophia Nanotechnology Research Center2, CREST JST3　○Ryuichi Araki1, Katsumi Kishino1,2,3, Shunsuke Ishizawa1,2,3, Takashi Ogawa1, Akihiko Kikuchi1,2,3
△	2	Optical properties of (1-101) InGaN/GaN MQW stripe laser structure on Si substrate	Nagoya Univ.1　○Tasuku Murase1, Tomoyuki Tanikawa1, Yoshio Honda1, Masahito Yamaguchi1, Hiroshi Amano1
	3	B/C exciton emissions from AlN p-n junction LED	NTT BRL1　○Yoshitaka Taniyasu1, Makoto Kasu1
△	4	Transparent Electrode for Ultraviolet Light Emitting Diodes	Meijo Univ.1, Nagoya Univ2　○（M1）Kousuke Takehara1, Kenichiro Takeda1, Kengo Nagata1, Hisashi Sakurai1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1, Hiroshi Amano1
△	5	100 mW Deep Ultraviolet Emission from Al-rich AlGaN/AlN Multiple Quantum Wells Pumped by an Electron Beam	Kyoto Univ.1, Ushio Inc.2　○Takao Oto1, Ryan Banal1, Ken Kataoka2, Mitsuru Funato1, Yoichi Kawakami1
	6	Enhancement in the efficiency of AlGaN Deep-UV LEDs by using a high reflective Ni/Al p-type electrode	RIKEN1, Saitama Univ.2, JST-CREST3　○Masahiro Akiba1,2,3, Hideki Hirayama1,3, Yusuke Tsukada1,2,3, Noritoshi Maeda1,3, Norihiko Kamata2,3
		Break 10:30〜10:45
	7	High Power AlGaN Deep-UV LEDs by using a Multiquantum-Barrier Electron-Blocking Layer	RIKEN1, Saitama Univ.2, JST-CREST3　○（M2）Yusuke Tsukada1,2,3, Hideki Hirayama1,3, Masahiro Akiba1,2,3, Noritoshi Maeda1,3, Norihiko Kamata2,3
△	8	280nm-band InAlGaN deep UV LED on Si substrates	RIKEN1, JST-CREST2　○（P）Sachie Fujikawa1,2, Hideki Hirayama1,2
	9	Development of Continuous 10mW-class AlGaN UV LED Chip	UV Craftory CO. Ltd.1, Meijyo Univ.2, Nagoya Univ.3　○Shinya Fukahori1, Cyril Pernot1, Myunghee Kim1, Takehiko Fujita1, Tetsuhiko Inazu1, Yosuke Nagasawa1, Akira Hirano1, Masamichi Ipponmatsu1, Motoaki Iwaya2, Satoshi Kamiyama2, Isamu Akasaki2, Hiroshi Amano3
	10	The development of high-peak-power picoseconds optical pulses sources based on a GaInN mode-locked semiconductor laser diode	Sony Corp. Advanced Materials Lab.1, NICHe, Tohoku Univ.2　○Tomoyuki Oki1, Rintaro Koda1,2, Takao Miyajima1,2, Hideki Watanabe1, Masaru Kuramoto1,2, Masao Ikeda1,2, Hiroyuki Yokoyama2
	11	Development of 100 W peak power GaInN optical pulse source and application for nano-fabrication	NICHe Tohoku Univ.1, Advanced Materials Labs. Sony Corp2　○Rintaro Koda1,2, Tomoyuki Oki2, Takao Miyajima1,2, Hideki Watanabe2, Masaru Kuramoto1,2, Masao Ikeda1,2, Hiroyuki Yokoyama1
	12	High-temporal-resolution measurement of 405-nm-picosecond optical pulses	NICHe, Tohoku Univ.1, Adv. Materials Labs., Sony Corp.2　○Shunsuke Kono1, Tomoyuki Oki2, Rintaro Koda1,2, Hideki Watanabe2, Takao Miyajima1,2, Masaru Kuramoto1,2, Masao Ikeda1,2, Hiroyuki Yokoyama1
	13	Characterization of ultraviolet laser diode on ELO AlGaN underlying layer	Meijo Univ.1, Nagoya Univ. ARC2, Hamamatsu Photonics K.K3　○Kenichirou Takeda1, Kengo Nagata1, Kousuke Takehara1, Hiroki Aoshima1, Syun Itou1, Yoshinori Oshimura1, Motoaki Iwaya1, Testuya Takeuchi1, Satoshi Kamiyama1, Hiroshi Amano1, Isamu Akasaki1, Sadaharu Yoshida3, Masakazu Kuwabara3, Youji Yamashita3, Hirofumi Kan3
15.4 III-V Nitride Epitaxial Growth
Sept. 16 9:00〜12:30
16a-C - 1〜13
	1	Preparation of ScAlN thin films by using ScAl alloy sputtering target	AIST1, DENSO2　○Morito Akiyama1, Tatsuo Tabaru1, Keiko Nishikubo1, Akihiko Teshigahara2, Kazuhiko Kano2
▲	2	Electronic band structures of polar and nonpolar GaN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy	Univ.Tokyo1, JST-CREST2, Sync. Rad. Res. Org.3, Inst. Indust. Sci.4　○Jiangwei Liu1, Atsushi Kobayashi1, Satoshi Toyoda1,2,3, Akira Kikuchi1, Jitsuo Ohta4, Hiroshi Fujioka4,2, Hiroshi Kumigashira1,2,3, Masaharu Oshima1,2,3
	3	Characterization of electrical and magnetic properties of diluted magnetic semiconductor GaGdN and GaGdN/AlGaN heterostructures	ISIR, Osaka Univ.1　Daijiro Abe1, Kotaro Higashi1, Yosuke Mitsuno1, Sachio Komori1, Yi-Kai Zhou1, Shuichi Emura1, Shigehiko Hasegawa1, ○Hajime Asahi1
△	4	Influence of Substrate Temperature and Nitrogen Gas Flow Ratio on Crystalline Quality of AlN Film Fabricated by Reactive Sputtering	IMRAM, Tohoku Univ.1　○（M2）Tomoyuki Kumada1, Makoto Ohtsuka1, Hiroyuki Fukuyama1
	5	First-principle study on the adsorption process of group-V sources on the AlN(0001) surface	Tokyo Univ. of Agri. & Tech.1　○Hikari Suzuki1, Rie Togashi1, Hisashi Murakami1, Yoshinao Kumagai1, Akinori Koukitu1
	6	Measurement of temperature dependent lattice constants of AlN and various starting substrates for the growth of AlN	Tokyo Univ. of Agri. & Tech.1, Tokuyama Corporation2, Bruker AXS K. K.3　○Miki Sakai1, Toru Nagashima2, Jumpei Tajima1, Rie Togashi1, Hisashi Murakami1, Hitoshi Morioka3, Tsutomu Yamauchi3, Keisuke Saito3, Yoshinao Kumagai1, Kazuya Takada2, Akinori Koukitu1
		Break 10:30〜10:45
	7	Formation of an AlN layer on Si substrate by pulsed laser deposition	Hirosaki Univ.1　○（M1）Daiki Suzuki1, Hideki Nakazawa1
	8	Initial stage of nitride growth on Rh(111) substrates	The Univ. Tokyo1, The Univ. Tokyo2, JST-CREST3　○Yuko Okano1, Shigeru Inoue1, Kohei Ueno1, Atsushi Kobayashi2, Jitsuo Ohta1, Masaharu Oshima2,3, Hiroshi Fujioka1,3
	9	Growth mode of AlN on (√3ｘ√3 R30°)SiON/6H-SiC nano surface	Kyushu Univ.1　○Yusaku Ishiyama1, Takashi Kajiwara1, Satoru Tanaka1
	10	Thermal annealing of AlN/6H-SiC heteroepitaxial structure	Tokai Univ.1　○Mitsuru Ohneda3, Takashi Inushima1
△	11	Further Reduction of Threading Dislocation Density in 2H-AlN on 6H-SiC (0001) by Focusing Chemical Condition of SiC Surface	Kyoto Univ.1, Kyoto Univ. PESEC2　○（DC）Hironori Okumura1, Tsunenobu Kimoto1,2, Jun Suda1
△	12	Crystalline Quality of GaN Layers Grown on 6H-SiC(0001) Substrates with High-Quality AlN Templates by MBE	Kyoto Univ.1, Kyoto Univ. PESEC2　○Ryosuke Kikuchi1, Hironori Okumura1, Tsunenobu Kimoto1,2, Jun Suda1
△	13	Study on interface for AlN growth on sapphire substrate	Mie Univ.1　○Reina Miyagawa1, Hideto Miyake1, Kazumasa Hiramatsu1
15.5 Group-IV Crystals and IV-IV Alloys
Sept. 14 13:30〜17:45
14p-ZQ - 1〜16
	1	Strain Retention by Effect of Stress-Retainer on Source/Drain Regions of SSOI Islands	MIRAI-TOSHIBA1, MIRAI-AIST2　○Koji Usuda1, Yoshihiko Moriyama1, Vladimir Poborchii2, Tetsuya Tada2, Tsutomu Tezuka1
	2	Formation of Strained Si with Flat and Uniformly Strained Surface by Sputter Epitaxy	Univ. of Agric. & Technol.1, NICT2, Univ. of Southampton3　○Hiroaki Hanafusa1, Nobumitsu Hirose2, Akifumi Kasamatsu2, Takashi Mimura2, Toshiaki Matsui2, Harold M. H. Chong3, Hiroshi Mizuta3, Yoshiyuki Suda1
	3	Relation between hole mobility in (110)-oriented strained Si and crystalline morphology	CCST, Univ. of Yamanashi1, IMR, Tohoku Univ.2, ARL, Tokyo City Univ.3　Yagi Sousuke1, ○Arimoto Keisuke1, Nakagawa Kiyokazu1, Usami Noritaka2, Nakajima Kazuo2, Sawano Kentarou3, Shiraki Yasuhiro3
	4	Effect of defects induced by Ar+ or Si+ ion implantation on strain relaxation of SiGe layers	Tokyo City Univ.1, Tohoku Univ.2, Univ. of Yamanashi3　○Yusuke Hoshi1, Kentarou Sawano1, Noritaka Usami2, Keisuke Arimoto3, Kiyokazu Nakagawa3, Yasuhiro Shiraki1
	5	Fabrication of relaxed SiGe buffer layers on Si (111) substrate by ion implantation technique	Tokyo City Univ.1, Univ. of Yamanashi2　○Satoshi Kubo1, Kentaro Sawano1, Yusuke Hoshi1, Kiyokazu Nakagawa2, Yasuhiro Shiraki1
	6	Surface structure evaluation of uniaxially-strained SiGe fabricated by selective ion implantation technique	Tokyo City Univ.1, Tohoku Univ.2, Yamanashi Univ.3　○Soh Nagakura1, Yusuke Hoshi1, Kentaro Sawano1, Noritaka Usami2, Kiyokazu Nakagawa3, Yasuhiro Shiraki1
	7	Stress Analysis of Thin Ge Film Grown by Sputter Epitaxy	Univ. of Agric. & Technol.1, NICT2, Univ. of Southampton3　○Hiroaki Hanafusa1, Nobumitsu Hirose2, Akifumi Kasamatsu2, Takashi Mimura2, Toshiaki Matsui2, Harold M.H Chong3, Hiroshi Mizuta3, Yoshiyuki Suda1
	8	Formation of low-resistivity contact by high-density Sb delta-doping into Ge(111)	Tokyo City Univ.1, Kyushu Univ.2, PRESTO JST3　○Keigo Takeda1, Yusuke Hoshi1, Kenji Kasahara2, kazutaka Yamane2, Kentarou Sawano1, Kohei Hamaya2,3, Masanobu Miyao2, Yasuhiro Shiraki1
		Break 15:30〜15:45
	9	Fabrication of high quality Fe3Si/SOI(111) contacts for spin-MOSFET applications	Kyushu Univ.1, PRESTO-JST2, Osaka Univ.3, Covalent Silicon Corp.4　○Yuzo Baba1, Tatsuhiko Murakami1, Naoki Hashimoto1, Yuichiro Ando1, Kohei Hamaya1,2, Jun Kikkawa3, Yoshiaki Nakamura3, Eiji Toyoda4, Koji Izunome4, Akira Sakai3, Masanobu Miyao1
	10	Electric characterization of wafer?bonded Germanium(111)-on-Insulator substrates using 4-point-probe pseudo-MOSFET	Osaka Univ.1, Covalent Silicon Co.2, Kyushu Univ.3　Keisuke Minami1, ○Yoshiaki Nakamura1, Jun Kikkawa1, Eiji Toyoda2, Koji Izunome2, Kohei Hamaya3, Masanobu Miyao3, Akira Sakai1
△	11	Fabrication of SiGe structure with high Ge concentration by rapid melt growth	Osaka Univ.1　○（M1）Shimpei Ogiwara1, Chiaki Yoshimoto1, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1
	12	Anneal temperature dependence of Ge concentration in SGOI structure fabricated by rapid melt growth	Osaka Univ.1　○Shimpei Ogiwara1, yuichiro Suzuki1, Chiaki Yoshimoto1, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1
△	13	Orientation-controlled Large Area GOI wih Mesh-Pattern Formed by SiGe Mixing Triggered Melting Growth	Dept. Electronics, Kyushu Univ.1　○Yasuharu Ohta1, Kaoru Toko1, Taizoh Sadoh1, Masanobu Miyao1
	14	Formation of Mosaic GOI (Ge on Insulator) for Epitaxial Template	Dept. Electronics, Kyushu Univ.1　○Hiroyuki Yokoyama1, Yuki Tojo1, Takashi Sakane1, Kaoru Toko1, Taizoh Sasoh1, Masanobu Miyao1
	15	Dislocation structures in Ge thin layers epitaxially grown on submicron regions of Si substrates	Grad. Sch. Eng. Sci. Osaka Univ1, IMEC2　○Shinji Harada1, Kohei Ebihara1, Jun Kikkawa1, Yoshiaki Nakamura1, Akira Sakai1, Wang Gang2, Caymax Matty2
△	16	Heavily Doping Technology for Strained Ge1-xSnx Layers	Nagoya Univ.1, JSPS Research Fellow2, IMEC3, KUL4, Covalent Silicon5　○Yosuke Shimura1,2, Shotaro Takeuchi1,5, Benjamin Vincent3, Geert Eneman3, Trudo Clarysse3, Andre Vantomme4, Johan Dekoster3, Matty Caymax3, Roger Loo3, Osamu Nakatsuka1, Shigeaki Zaima1
15.6 Group-IV Compounds
Sept. 14 9:30〜17:45
14a-ZS - 1〜10
▲	1	Stoichiometry simulation during SiC PVT crystal growth	RIAM, Kyushu Univ.1, AIST2　○Bing Gao1, Satoshi Nakano1, Xuejiang Chen1, Shin-ichi Nishizawa2, Koichi Kakimoto1
△	2	Influence of low frequency electromagnetic stirring on SiC solution growth	Kyushu Univ.1, RIAM, Kyushu Univ.2　○Fuminori Inui1, Bing Gao2, Satoshi Nakano2, Yoshihiro Kangawa1,2, Koichi Kakimoto1,2
▲△	3	Numerical simulation of the AC magnetic field influence on silicon melt for SiC bulk crystal growth	Adcanced Industrial Science and Technology1　○（B）Frederic Mercier1, Shin-ichi Nishizawa1
	4	Polytype control of SiC under continuous supply of CH4 gas in Li flux method	Graduate School of Engineering, Osaka Univ.1　○Yusuke Nakagawa1, Shin Takeuchi1, Mamoru Imade1, Masashi Yoshimura1, Yasuo Kitaoka1, Takatomo Sasaki1, Yusuke Mori1
	5	Solution growth of thick SiC films under continuous supply of CH4 gas	Graduate School of Engineering, Osaka Univ.1　○Shin Takeuchi1, Yusuke Nakagawa1, Mamoru Imade1, Masashi Yoshimura1, Yasuo Kitaoka1, Takatomo Sasaki1, Yusuke Mori1
		Break 10:45〜11:00
	6	SiC Film Deposition from SiH3CH3 at Low Temperatures	Yokohama Nat. Univ.1　○Yusuke Ando1, Hitoshi Habuka1
	7	Polytype Transformation Process in Hetero-growth of 3C-SiC on 6H-SiC	Nagoya Univ.1, MINATEC-LMGP2　○Kazuaki Seki1, ander Alex1, Shigeta Kozawa1, Toru Ujihara1, Patrick Chaudouët2, Didier Chaussende2, Yoshikazu Takeda1
	8	Low-Temperature, Ultrahigh-Rate Growth of 3C-SiC on Si substrate	Tohoku Univ.1, JST-CREST2　○Eiji Saito1, Maki Suemitsu1,2
	9	High-speed and thick 4H-SiC epitaxial growth by the close spaced vertically blow type CVD reactor	AIST1　○Yuuki Ishida1, Tetsuo Takahashi1, Hajime Okumura1, Kazuo Arai1, Sadafumi Yoshida1
	10	Reducing stacking faults in highly nitrogen doped 4H-SiC single crystal	AIST1, DENSO CORPORATION2, Toyota Central R&D Labs., Inc.3, TOYOTA MOTOR CORPORATION4　○Kazutoshi Kojima1, Tomohisa Kato1, Sachiko Ito1, Jun Kojima2, Husao Hirose2, Yasuo Kito2, Shoichi Yamauchi2, Koichi Nishikaw3, Ayumu Adachi4
		Lunch 12:15〜13:15
14p-ZS - 1〜17
△	1	TEM & AFM study on surface and interface morphology of thermally grown SiO2 dielectrics on 4H-SiC(0001) substrates	Osaka Univ.1, ROHM CO.,LTD2　○Yusuke Uenishi1, Kohei Kozono1, Shuhei Mitani2, Yuki Nakano2, Takashi Nakamura2, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1
	2	Investigation of extrinsic factors causing reliability degradation of SiC MOS devices	Osaka Univ.1, ROHM CO.,LTD2　○Yusuke Uenishi1, Shuhei Mitani2, Yuki Nakano2, Takashi Nakamura2, Takuji Hosoi1, Takayoshi Shimura1, Heiji Watanabe1
	3	Impact of Interface Roughness on Dielectric Breakdown of SiC Thermal Oxide	AIST1　○Junji Senzaki1, Atsushi Shimozato1, Kazutoshi Kojima1, Tomohisa Kato1, Yasunori Tanaka1, Hajime Okumura1
	4	Photo Emission Analysis of Thermal Oxides Grown on n-type 4H-SiC (0001) Face	AIST1, Hamamatsu Photonics2　○Junji Senzaki1, Atsushi Shimozato1, Kazunari Koshikawa2, Yasunori Tanaka1, Kenji Fukuda1, Hajime Okumura1
	5	Off-angle Dependence of Thermal Oxide Thickness for a- and m-face 4H-SiC	NAIST1　○Yoshihiro Ueoka1, Hiroshi Yano1, Tomoaki Hatayama1, Takashi Fuyuki1
△	6	Correlation between SiO2/SiC interface structure and conduction band offset	Osaka Univ.1, JAEA2, ROHM CO., LTD3　○Takashi Kirino1, Chanthaphan Atthawut1, Daisuke Ikeguchi1, Akitaka Yoshigoe2, Yuden Teraoka2, Syuhei Mitani3, Yuki Nakano3, Takashi Nakamura3, Takuji Hosoi3, Takayoshi Shimura1, Heiji Watanabe1
	7	Dielectric constant of the SiON ultra-thin film on SiC	Dpt. of Electronic-Engineering, the Univ. of Electro-Commun.1, Dpt. of Engineering-Sciences, the Univ. of Electro-Commun.2　○Takuya Ohsugi1, Jun Nakamura1,2
△	8	Effects of NO Annealing on 4H-SiC MOSFETs with Deposited and Thermally Grown Oxides Fabricated on Various Crystal Faces	Kyoto Univ.1　○（D）Yuichiro Nanen1, Jun Suda1, Tsunenobu Kimoto1
	9	Interface state density of gate oxide on 3C-SiC with buried insulating layer (SiC-OI)	Kyushu Institute of Technology1　○（M1）Kennichi Urata1, Makoto Ikeno1, Motoi Nakao1
		Break 15:30〜15:45
	10	Applicability Assessment of Two-Dimensional Model for Al Implantation into 4H-SiC	FUPET1, Central Res. Lab.2　○Kazuhiro Mochizuki1,2, Natsuki Yokoyama1,2
	11	Ion-implanted Al activation energy determination in 4H-SiC by frequency break point of capacitance-frequency characteristic	New Japan Radio1　○Hengyu Xu1, Shuichi Ono1, Manabu Arai1, Kimiyoshi Yamasaki1
	12	A Novel Cap Annealing Process for SiC Crystal using ECR-sputtered Carbon Films and ECR Plasma Etching	MES-AFTY Corp.1, Chiba Institute of Technology2, Kanagawa Industrial Technology Center3　○Tetsuya Tajima1, Hironori Torii1, Shigeru Hirono1, Tomoyuki Kamata2, Kensuke Akiyama3, Yasuo Hirabayashi3
▲	13	Effects of Ni/Nb thickness ratio on reaction microstructure and contact property with 4H-SiC	Dept. of Materials Science, Tohoku University1　○（D）Kunhwa Jung, Keiichi Ito, Yuji Sutou, Junichi Koike
△	14	Improvement of Schottky contact characteristics　by anodic oxidation on 4H-SiC	Nagoya Inst. of Tech1　○（M1）Masaya Kimura1, Masasi Katou1, Masaya Ichimura1
	15	Reverse I-V characteristics of SiC-SBDs with QPG(Quasi P-type Guard-ring) structure formed with several n-type epitaxial layer specifications	New Japan Radio1　○Shuichi Ono1, Satoru Ono1, Shuji Katakami1, Hengyu Xu1, Manabu Arai1, Kimiyoshi Yamasaki1
	16	Improved Current Gain in 4H-SiC Bipolar Junction Transistors Passivated by Deposited Oxides with Post-Nitridation Annealing	Kyoto Univ.1, PESEC, Kyoto Univ.2　○（D）Hiroki Miyake1, Tsunenobu Kimoto1,2, Jun Suda1
	17	300°C storage test of Au-Ge die attach system for SiC devices	FUPET1, Nissan Motor2, Fuji Electric HD3, Toshiba4, Sanken Electric5, AIST6　○Satoshi Tanimoto1,2, Kohei Matsui1,3, Kazuto Takao1,4, Shinji Sato1,5, Yoshinori Murakami1,2, Hiroshi Sato1,6, Hiroshi Yamaguchi1,6
15.6 Group-IV Compounds
Sept. 15 9:15〜12:30
15a-ZS - 1〜12
	1	Silicon Carbide Etching Reactor Design Using Chlorine Trifluoride Gas	Yokohama Nat.Univ.1, Kanto Denka2, AIST3　○Musashi Yumiya1, Yusuke Fukumoto1, Hitoshi Habuka1, Shinji Iizuka2, Katsuya Fukae2, Tomohisa Kato3
	2	4H-SiC Surface Pits Formed due to Etching Using ClF3 Gas	Yokohama Nat. Univ.1, Kanto Denka2, AIST3　○Kazuchika Furukawa1, Hitoshi Habuka1, Shinji Iizuka2, Katsuya Fukae2, Tomohisa Kato3
	3	Fano interference effect in heavily doped n-type 4H-SiC crystal	AIST1　○Takeshi Mitani, Shinichi Nakashima, Tomohisa Kato, Kazutoshi Kojima, Hajime Okumura
	4	Photoluminescence Properties of Frank-type Defects in 4H-SiC Epilayer	CRIEPI1　○Isaho Kamata1, Xuan Zhang1, Hidekazu Tsuchida1
△	5	Evaluation of Long Carrier Lifetime of Very Thick 4H-SiC Epilayers	Central Research Institute of Electric Power Industry1　○Tetsuya Miyazawa1, Masahiko Ito1, Hidekazu Tsuchida1
▲△	6	Correlation between thermal stress and formation of interfacial dislocations in 4H-SiC epilayers	Central Research Institute of Electric Power Industry1　○Xuan Zhang1, Masahiro Nagano1, Hidekazu Tsuchida1
		Break 10:45〜11:00
	7	Noncontact evaluation of processed SiC by ultraviolet light irradiation	Nagoya Inst. of Tech.1, Fujimi2　○Kazumasa Nishio1, Kazuyuki Nagatoshi2, Osamu Eryu1
	8	Influence of SiH4 addition exerted on SiC transformation by high-temperature annealing	Fuji Electric Holdings Co., Ltd1, University of Tsukuba2　○Yasuyuki Kawada1,2, Takeshi Tawara1, Shun-ichi Nakamura1, Tae Tawara1, Masahide Gotoh1, Noriyuki Iwamuro1, Katsuhiro Akimoto2
△	9	Reduction and Generation Mechanism of Deep Levels in SiC by Thermal Oxidation	Kyoto Univ.1　○Koutarou Kawahara1, Jun Suda1, Tsunenobu Kimoto1
	10	A Theoretical Study on Si and C Emission into SiC Layer during Oxidation	Saitama Univ.1, ADPERC AIST2　○Yasuto Hijikata1, Shuhei Yagi1, Hiroyuki Yaguchi1, Sadafumi Yoshida2
	11	Effects of electron irradiation induced defects on the transient charge collections of SiC diodes	UEC1, JAEA2, AIST3　○Naoya Iwamoto1,2, Shinobu Onoda2, Takahiro Makino2, Takeshi Ohshima2, Kazutoshi Kojima3, Shunpei Koike1, Atsushi Koizumi1, Kazuo Uchida1, Shinji Nozaki1
	12	Radiation Resistance of Al-doped 4H-SiC Epilayer to 200keV Electron Irradiation	OECU1, JAEA2　○Takunori Nojiri1, Nishino Kouzou1, Hideki Yanagisawa1, Shinobu Onoda2, Takeshi Oshima2
15.7 Epitaxial Growth Fundamentals
Sept. 14
14a-ZQ - 1〜12
	Short Presentation (5 min.) 10:30〜11:30 14a-ZQ - 1〜12　Poster Session 13:00〜15:00
	1	Theoretical Study of Twinning Formation on InP(111)A surface	Mie Univ.1　○Tomoki Yamashita 1, Toru Akiyama1, Kohji Nakamura1, Tomonori Ito1
	2	First-principles calculations of the electron effective mass values in InN	Tokyo Univ. of Science1　○Tetsuya Wada1, Masatoshi Sano1
	3	An ab initio-based approach to adsorption behavior of In on InAs wetting layer grown on GaAs(001) substrate	Mie Univ.1　○Kosuke Ogasawara1, Toru Akiyama1, Kohji Nakamura1, Tomonori Ito1
	4	Theoretical investigations for the stability of InAs(111)A surface grown on GaAs	Mie Univ.1　○Tomonori Ito1, Naoki Ishimure1, Toru Akiyama1, Kohji Nakamura1
	5	Surface reconstructions on InGaAs(001) and interface properties of HfO2/InGaAs	NIMS1, AIST2　○Akihiro Ohtake1, Noriyuki Miyata2, Yuji Urabe2, Tetsuji Yasuda2
	6	Study of Structure Fluctuation during Molecular Beam Epitaxial Growth Using X-Ray Speckle Scattering	JAEA1　○Masamitu Takahasi1
▲	7	Selective epitaxail growth of GaAs on star patterned (100) GaAs substrate	Research Institute of Electronics, Shizuoka Univ.1　○Mouleeswaran Deivasigamani1, Tadanobu Koyama1, Akira Tanaka1, Yasuhiro Hayakawa1
	8	Preparation and Evaluation of ITO thin films by Metal Organic Decomposition	Ryukoku Univ.1　○Go Kageyama1, Toshihiro Nonaka1, Shin-ichi Yamamoto1
	9	Study of growth condition for GaAs (001) microchannel epitaxy using temperature difference method of LPE	Meijo Univ1　○Haruki Kojima1, Hidejiro Sato1, Masasi Kazama1, Sigeya Naritsuka1, Takahiro Maruyama1
	10	Synthesis and Characterizations of CN Thin Films for White LED	Ryukoku Univ.1, Tsuyama national college of technology2　○Masaki Satake1, Shinpei Kishimoto2, Kunio Itoh2, Shin-ichi Yamamoto1
	11	Time-resolved X-lay diffraction measurements of high-density InAs QDs during Sb-irradiated growth interruption (3)	Univ.of.Electro-Comm.1, NIMS2, JAEA3　○Kazuki Yamamoto1, Naoki Kakuda1, Toshiyuki Kaizu2, Masamitu Takahasi3, Seizi Fujikawa3, Koichi Yamaguchi1
	12	Statistical Analysis of Surface Reconstruction Domains and Quantum Dot-Formation Pattern on InAs Wetting Layer	Anan Natl. Col. Tech.1　○Tomoya Konishi1, Shiro Tsukamoto1
15.8 Nano-impurities and defects
Sept. 16 9:15〜12:30
16a-ZT - 1〜11
	1	Development of vacancy evaluation technique for silicon crystal using ultrasonic measurements with P(VDF/TrFE) piezoelectric thin　film	Graduate School of Science and Technology, Niigata Univ.1, MTC Co., Ltd.2, Center for Instrumental Analysis, Univ. of Toyama3, Center for Quantum Materials Science, Niigata Univ.4　○Kazuki Okabe1, Keisuke Mitsumoto1, Takashi Yanase2, Mitsuhiro Akatsu1, Syotaro Baba1, Satoru Komatsu1, Yasushi Ono3, Yuichi Nemoto1, Hiroshi Yamada-Kaneta4, Terutaka Goto1
	2	Localized electronic state of silicon monovacancy via ab initio calculations	Graduate School of Science and Technology, Niigata Univ.1, Graduate School of Natural Science and Technology, Niigata Univ.2, Center for Quantum Materials Science, Niigata Univ.3　○Takafumi Ogawa1, Kenji Tsuruta2, Hiroshi Iyetomi1, Yuichi Nemoto1, Hiroshi Yamada-Kaneta3, Terutaka Goto1
△	3	First Principles Calculation on Screw Defects at Si(110)/(100) Interface (2)	Okayama Pref. Univ.1, Covalent Materials Co., Ltd.2　○（D）Hiroaki Kariyazaki1, Tatsuhiko Aoki1,2, Koji Izunome2, Koji Sueoka1
	4	DLTS Measurements of Depth Profiles of Cu centers Formed in Si crystals Saturated with Cu	Hitachi,Ltd., Hitachi Res. Lab.1　○Minoru Nakamura1, Susumu Murakami1
	5	Quantitative Analysis of Low Concentration Carbon in Silicon Wafer by Luminescence Activation Using Electron Irradiation (1)	Covalent Silicon Corp.1, ISAS/JAXA2　○Satoko Nakagawa1, Kazuhiko Kashima1, Michio Tajima2
	6	Fine Structure Due to Donor-Acceptor Pair Luminescence in Si	ISAS/JAXA1, UMB2, ANU3　○Michio Tajima1, Takaaki Iwai1, Hiroyuki Toyota1, Simona Binetti2, Dan Macdonald3
		Break 11:00〜11:15
	7	Structural Elements of Ultrashallow Thermal Donors Formed in Silicon Crystals	Tohoku Gakuin Univ.1, Tohoku Univ. IMR2　○Akito Hara1, Teruyoshi Awano1, Yutaka Ohno2, Ichiro Yonenaga2
	8	The effect of anneal for nanostructured Si chips	NIMS1, Univ. Tsukuba2, Tohoku Univ.3, IMR, Tohoku Univ.4　○Hisashi Onodera1,2, Jiwang Yan3, Shun Ito4, Takashi Sekiguchi1,2
	9	DLTS measurement of Ge directly grown on Si substrate	NIMS1, MIT2, Univ. Tokyo3　○Kenichiro Kono1, Luan Hsin-Chiao2, Kazumi Wada3, Lionel Kimerling2
	10	Growth control and impurity doping in Ge nanowires grwon by CVD method	NIMS1, JST-PRESTO2　○Naoki Fukata1,2, Keisuke Sato1, Takashi Sekiguchi1, Masanori Mitome1, Yoshio Bando1
	11	Growth of AlC thin film by metal organic chemical vapor deposition	ATS,　Univ. of Tokushima1, STS,　Univ. of Tokushima2　○Fumiya Horie1, Yoshiki Naoi1,2, Shiro Sakai1,2