Symposium
Novel technologies and problems in photonic ICT
Sept. 8 9:15〜16:30
8p-ZN-　/ 0
1 Emerging applications of 4K Digital Cinema bi-directional communicatuions Tokyo City Univ., Faculty of Environmental and information studies　Tetsuro Fujii
2 Visible Light Communication Keio University 1　*Shinichiro Haruyama 1
3 How Deep Does Optical Interconnection Penetrate into Electronics? MIRAI-Selete 1, NEC 2　Ohashi Keishi 1,2
Break 14:45〜15:00
4 Devices for optical communication using planar lightwave circuit and liquid crystal light modulator. NTT Photonics Labs. 1　*Ooba Naoki 1
▲ 5 Remote Detection of a Fiber Fuse, and Protecting Optical Fibers Nat. Inst. of Info and Comm. Tech. (NICT) 1　* Abedin Kazi Sarwar
6 The latest technology of optical fiber Furukawa Electric co., Ltd.　*Yagi Takeshi 1
Application and movement in self-aligned and ink-jet printing organic devices
Sept. 8 13:00〜16:40
8p-D-　/ 0
1 Introductory talk: Application and development of organic devices with self-alignment ink-jet printing technologies Univ. Toyama 1　Hiroyuki Okada 1
2 Organic Device Fabrication Using Ink-jet Printing Method Univ. of Toyama 1　Naka Shigeki 1
3 Integration and IJP of Functional Oxides Using Tailored Liquids AIST 1　*Kazumi Kato 1, Kazuyuki Suzuki 1
4 Self-aligned organic transistors using ink-jet technology Nagoya Muni. Ind. Res. Inst. 1,Brother Ind. 2,Chubu S&T Center 3, Univ. Toyama 4　*Murase Makoto 1,Hayashi Hideki 1,Kojima Masahiko 1,Omori Masahiko 2,Suzuki Shinichi 2,Inoue Toyokazu 2,Miyabayashi Takeshi 2,Itagaki Motoshi 3,Naka Shigeki 4,Okada Hiroyuki 4
Break 14:20〜14:40
5 Inkjet printing technology and its applications for printable electronics Brother Industries,Ltd. 1,Univ. of Toyama 2　*Inoue Toyokazu 1,Miyabayashi Takeshi 1,Naka Shigeki 2,Okada Hiroyuki 2
6 Printed Wireless Power Transmission System For Organic Lighit-Emitting Devices R&Dcenter Tsuchiya 1,Univ.Toyama 2　*Koya Ohara 1,Kouji Ikeda 1,Yoshinobu Shomi 1,Masahito Hosino 1,Shigeki Naka 2 and Hiroyuki Okada 2
7 Optimization of Polyaniline/Pporphyrin/C60 organic thin film solar cells and development to IJP manufacturing Toyama Ind. Tech. Center1,Brother Ind.2　Takashi Terasawa1, Masahiko Omori2
8 Printable self-aligned organic transistors AIST　*Kamata Toshihide
9 Panel discussions 　
Nanotechnology frontier unveiled by noncontact atomic force microscopy
Sept. 8 9:00〜16:50
8p-E-　/ 0
1 Frontiers of Noncontact Atomic Force Microscopy Kobe Univ. 1　*Onishi Hiroshi 1
2 Sensitivity and noise analysis of high-resolution FM-AFM in low-Q environments Kyoto Univ. 1　*Yamada Hirofumi 1
3 Atomic Force Microscopy with high force sensitivity, high scanning speed and multifunction Osaka Univ. 1, CREST, JST 2　Sugawara Yasuhiro 1,2
4 Atom manipulation and spectroscopic measurements using atomic force microscopy at room temperature Osaka Univ.　Sugimoto Yoshiaki 1, Yurtsever Ayhan 1, Sawada Daisuke 1, Morita Ken-ichi 1, Abe Masayuki 1, Morita Seizo 1
5 Surface analysis by measuring force interaction, current and dissipation energy using noncontact AFM Kanazawa Univ. 1, JAIST 2　*Arai Toyoko 1, Tomitori Masahiko 2
Break 15:05〜15:20
6 High-resolution Measurement of Surface Potential by Using FM-AFM/KFM ISSP, Univ. Tokyo 1　*Toyoaki Eguchi 1, Yukio Hasegawa 1
7 Attractive force imaging of biomolecules on insulating surfaces. ISIR, Osaka Univ. 1　*Matsumoto Takuya 1
8 Application of NC-AFM to Electrochemistry; Change in Local Structure of Molecular Assembly by Electron Transfer Tokyo Tech. 1, Osaka Univ. 2, JST PRESTO 3　Umeda Ken-ichi 1, Yokota Yasuyuki 2, Fukui Ken-ichi 2,3
Research front of UV nanoimprint lithography
Sept. 8 9:00〜17:00
8p-ZC-　/ 0
1 Introductory Talk: Current State of UV Nanoimprint and Its Applications LASTI Univ. of Hyogo 1, JST-CREST 2　Matsui Shinji 1
2 UV-nanoimprint lithography − application to spin coat UV-curable resin film − AIST1,JST-CREST2　*Hiroshima Hiroshi1,2
3 Simulation analysis on nanoimprint process Osaka Pref. Univ. 1,JST-CREST 2　*Yoshihiko Hirai 1,2, Hiroaki Kawata 1,2, Masaaki Yasuda 1,2
4 Studies to realize antisticking layers with high durability IMRAM, Tohoku Univ. 1, JST-CREST 2　*Nakagawa Masaru 1,2
Break 14:55〜15:15
5 Mold Fabrication for UV nanoimprint HOYA Corp.　*Nagarekawa Osamu
6 UV-nanoimprint resins and their release property from the mold Toyo Gosei　Nobuji Sakai1
7 UV-Curable Resins Appropriate for Nanoimprint Daicel Chemical Industries, LTD.　Miyake Hiroto 1, Yukawa Takao 1, Takai Hideyuki 1, Iyoshi Shuso 1
Challenges in Silicon Technology - Current Status and Prospects in Materials, Processing and Devices
Sept. 8 9:00〜17:30
8p-TE-　/ 0
1 Symposium of Challenges in Silicon Technology − Current Status and Prospects in Materials, Processing and Deviceｓ Hiroshima Univ.　Seiichi Miyazaki
2 Variability in Scaled MOSFETs and Future Prospect Univ. of Tokyo 1, MIRAI-Selete 2　T. Hiramoto 1,2, A. Nishida 2, and K. Takeuchi 2
3 Silicon Nanotechnology: 1D, 0D and Beyond Tokyo Tech　*Oda Shunri, Uchida Ken
4 Present State and Future Prospects of Lithography Technology LASTI Univ. of Hyogo　Matsui Shinji 1
5 Recent Advances and Perspectives in Dopant Profiling Methods by STM MIRAI-NIRC 1, AIST 2　*Masayasu Nishizawa 1,2, Leonid Bolotov 1,2, and Toshihiko Kanayama 1,2
Break 15:15〜15:30
6 Junction Technologies; Current status and our challenges Ultimate Junction Technologies, Inc. 1　Bunji Mizuno 1, Hendriansyah Sauddin 1
7 Problems and Prospects of Interconnect Technology Kansai University, Faculty of System Engineering　Shoso Shingubara
8 Recent Progress and Perspectives of Integrated Circuits Process and Device Modeling Osaka Univ.　Shinji Odanaka
9 Integration of Si LSI Circuits and Bio-Sensing Devices Toyohashi Univ. Tech.1, JST-CREST 2　*Kazuaki Sawada1,2
Semiconductor Device technology for energy saving through thin film technology and surface science
Sept. 8 9:00〜17:15
8p-L-　/ 0
1 Semiconductor Device technology for energy saving through thin film technology and surface science Chubu Univ.1, Waseda Univ.2　*Toshio Kawahara1，Takanobu Watanabe2
2 Importance of Ultra-Low Power Silicon Device Technology Tokyo Inst. of Tech. Frontier 1　Iwai Hiroshi 1
3 Heat Generation in Nanoscale MOSFETs and Its Impact on Current Conduction Mechanisms Osaka Univ. 1, Waseda Univ. 2　*Kamakura Yoshinari 1, Zushi Tomofumi 2, Watanabe Takanobu 2, Mori Nobuya 1, Taniguchi Kenji 1
4 Low-loss IGBT and Energy-saving Hitachi, Ltd., Hitachi Research Laboratory　Mutsuhiro Mori
5 Epitaxial growth technology for SiC power device AIST 1　*Kojima　Kazutoshi　1
Break 15:05〜15:25
6 Temperature independent bandgap semiconductor TlInGaAsN and its application to semiconductor laser diodes Osaka Univ. ISIR-SANKEN 1　*Hasegawa Shigehiko 1, Asahi Hajime 1
7 Cooling for Electric Device and Thermoelectric effect, Self-cooling device Chubu Univ. 1, Yokohama National Univ. 2, National Defense Univ. 3　*Yamaguchi Satarou 1, Nakatsugawa Hiroshi 2, Okamoto Yoichi 3
8 Amorphous and microcrystalline silicon solar cells National Inst. Adv. Industr. Sci. Tech.　*Masuda Atsushi 1
9 Compound Semiconductor Solar Cells Toyota Tech. Inst.　Yamaguchi Masafumi 1
10 Closing talk Waseda Univ. 1　Watanabe Takanobu 1
Plasma Processing Technology for Advanced MEMS - Its Current Status and Future Prospects
Sept. 8 9:00〜18:00
8p-ZD-　/ 0
1 Creation of Plasma-Nanocarbon Fusion Science Department of Electronic Engineering, Tohoku Univ. 1, Inst. of Multidiscipl. Research for Advanced Materials, Tohoku Univ. 2　*Hatakeyama Rikizo 1, Kaneko Toshiro 1, Kato Toshiaki 1, Li Yongfeng 1, Baba Kazuhiko 1, Okada Takeru 2
2 Introductory talk Toyota Technol. Inst. 1　Sasaki Minoru 1
3 Plasma Processes Unique to MEMS Tohoku Univ.　*Shuji Tanaka
4 Plasma Etching Equipment for the Fabrication of ULSI Devices: Progressive Development and Current Status Kyoto Univ. 1　*Kouichi Ono 1
5 Deep RIE technology for MEMS. ULVAC, Inc. Institute for Semiconductor technologies　Yasuhiro Morikawa 1
6 New DRIE with Oxygen Plasma Irradiation and Applications DENSO Research labs.　Takeuchi Yukihiro 1,Ohara Junji 1,Kawahara Nobuaki 1
Break 15:35〜15:45
7 Future Works of Plasma Process for MEMS Fabrication Osaka Prefecture Univ. 1　*Kawata Hiroaki 1, Yasuda Masaaki 1, Hirai Yoshihiko 1
8 Plasma and surface chemistry in Si-MEMS etching process Keio Univ 1　*Yagisawa Takashi 1, Makabe Toshiaki 1
9 Process Technologies for Functional 3-D MEMS structure The Univ. of Tokyo　Yoshio MITA
10 Fabrication of MEMS device using UV nanoimprint lithography and plasma process Nanotech. Res. lab., Waseda Univ. 1, Faculty of Sci. Eng. 2　*Mizuno Jun 1, Hidetoshi Shinohara 2, Shuichi Shoji 1,2
11 Plasma Surface Modification for MEMS fabrication process Shibaura Tech.1　*Muguruma Hitoshi1
12 Summary: Perspective of plasma technology for MEMS in the next generation Kyushu Univ. 1　Masaharu Shiartani 1
Brief reviewing gate stack research : For the next generation researching
Sept. 9 9:10〜17:45
9a-TC-　/ 0
1 Opening: 10 years in high-k research NIMS 1, Waseda Univ 2　*Chikyow Toyihiro1, Yamada Keisaku2
2 Selection and research of HfO2 in 1985 Waseda Univ.　*Yamada Keisaku1
3 New Material Science World Generated by the Competition between Ionicity and Covalency −From the High-k History- Univ of Tsukuba 1　*Kenji Shiraishi 1
Break 10:15〜10:30
4 Thermal properties of Hf-based high-k gate dielectrics FUJITSU LABORATORIES LTD.　*Kaneta Chioko, Takahashi Norihiko, Yamasaki Takahiro
5 Study of Internal Potential in High-k Dielectric/Metal Gate Stack - Insight into Work Function Change of Metal Gat Hiroshima Univ.　Seiichi Miyazaki
6 Fabrication of Advanced Metal/High-k Gate Stacks by Atomically Controlled In-situ PVD-based Method Osaka Univ.　*Watanabe Heiji
Lunch 12:00〜13:00
9p-TC-　/ 0
1 Challenges & Opportunities of High-k Gate Dielectrics -Retrospect and Future ULSI Proc. Tech. Develop. Ctr, Semiconductor Company, Panasonic Corp.　Niwa Masaaki 1
2 Evaluation of Local Electrical Properties and Reliability of Gate Dielectrics using C-AFM Nagoya Univ. 1　*Shigeaki Zaima 1, Mitsuo Sakashita 1, Hiroki Kondo 1, Osamu Nakatsuka 1
3 Two-Dimensional Distribution of Dielectric Breakdown Defects of High-k Gate Films Univ. of Tsukuba, Inst. of Applied Physics 1　Kikuo Yamabe 1
4 Study of the High-k Gate Dielectrics Reliability 〜Now, and Future〜 Selete 1　*Motoyuki Sato 1, Jiro Yugami 1, Kazuto Ikeda 1, Yuzuru Ohji 1
Break 15:10〜15:25
5 Current understanding of Carrier Transport Properties in Metal Gate/High-k MISFETs TOSHIBA Corp.　*Kosuke Tatsumura, Masakazu Goto, Masumi Saito, Ryosuke Iijima, Atsuhiro Kinoshita
6 Gate Stack Technology from viewpoint of Nano Device Design CIR TOHOKU Univ.　*Tetsuo Endoh 1
7 Current Status and Future View for High-k Gate Insulator −Focusing on Rare Earth Materials− Tokyo Inst. of Tech. Frontier 1
Tokyo Inst. of Tech. IGSSE 2　Iwai Hiroshi 1
Ahemet Parhat 1
Kakushima Kuniyuki 2
8 High-k Technology for Much More Moore CMOS Univ. Tokyo　Toriumi Akira
Crystal Growth and Processing Technology for Realizing GaN Wafer Production
Sept. 9 9:30〜17:00
9a-X-　/ 0
1 Introductory Talk: Crystal Growth and Processing Technology for Realizing GaN Wafer Production Osaka Univ.　Yusuke Mori, Yasuo Kitaoka
2 Development need for bulk GaN substrates Meijo Univ.　Amano Hiroshi
3 GaN wafer and its favorable polishing technology Furukawa Co.,Ltd.1　*Usui Akira 1
Break 10:20〜10:35
4 Processing Technique for Optoelectronic Device Materials -Aiming for High-efficiency Processing of GaN substrates- Kyushu Univ.1　*Doi K. Toshiro 1
5 Chemical Mechanical Polishing (CMP) of GaN single crystals Namiki Precision Jewel 1　Aida Hideo 1, Takeda Hidetoshi 1, Katakura Haruji 1, Sunakawa Kazuhiko 1
6 A novel surfacing method for GaN wafer Osaka Univ. 1　*Yamauchi Kazuto 1, Sano Yasuhisa 1, Murata Junji 1, Sadakuni Shun 1
Fabrication of new nanoparticles and their applications
Sept. 9 10:00〜16:25
9p-ZH-　/ 0
1 Fabrication of new nanoparticles and their applications: Introduction Kyoto Univ.　Kanemitsu Yoshihiko
2 Characteristic Catalytic Activity of Two-component Clusters and Nanoparticles The Univ. of Tokyo　Miyajima Ken 1, Fukushima Naoya 1, Himeno Hidenori 1, Yamada Akira 1, *Mafune Fumitaka 1
3 Structural control and application to catalysis of binary alloy nanoparticles CRC, Hokkaido Univ. 1, JST-PRESTO 2, JST-CREST 3　*Yamauchi Miho 1,2, Tsukuda Tatsuya 1,3, Abe Ryu 1
4 The Electronic Properties of ?-bonded Gold Nanoparticles Univ. of Tsukuba, Dept. of Chemistry　*Kanehara Masayuki, Teranishi Toshiharu
Break 14:40〜14:55
5 Superionic conduction of AgI nanoparticles at room temperature Kyushu Univ. 1, JST-CREST 2, Kyoto Univ. 3　*Rie Makiura 1, 2, Takayuki Yonemura 1, Ryuichi Ikeda 1, 2, Hiroshi Kitagawa 1, 2, 3
6 Optical function of impurity-doped core/shell nanocrystals NAIST 1　*Ishizumi Atsushi 1
7 Photoinduced Charge Separation at Nanoparticle Interfaces Univ. of Tokyo 1, JST 2　*Tatsuma Tetsu 1,2, Sakai Nobuyuki 1, Takahashi Yukina 1, Matsubara Kazuki 1
Current state of nanowire research -formation of nanowires, nano properties and applications to novel devices
Sept. 9 9:00〜17:00
9p-S-　/ 0
1 Introductory Talk: Possibility of Nanowires Hokkaito Univ.　Takashi Fukui
2 Synthesis and property of novel inorganic nanotubes and nanowires NIMS 1　*Bando Yoshio 1
3 Device Application of Semiconductor Nanowires Hokkaido Univ. 1　Junichi Motohisa
4 VLS nanowires used in bio-sensor applications: improvements in nanowire uniformity and reproducibility Corporate R&D Headquaters, Canon Inc.　Makoto Koto
5 Metal Oxides Nanowires: Nanostructure Fabrications-Applications to non-volatile memory ISIR Osaka Univ. 1, JST-PRESTO 2　*Yanagida Takeshi 1,2, Kawai Tomoji 1
　
Break 14:55〜15:05
6 Synthesis and impurity doping in silicon nanowires by bottom-up method NIMS 1, JST PRESTO 2, Inst. of Appl. Phys., Univ. of Tsukuba ３　*N. Fukata 1,2, N. Saito 3, J. Chen 1, T. Sekiguchi 1, K. Murakami 3
▲ 7 Fabrication and optical characterization of III-V compound semiconductor nanowires grown by vapor-liquid-solid method NTT BRL　*Guoqiang Zhang 1, Kouda Tateno 1, Hideki Gotoh 1, Hidetoshi Nakano 1
8 Progress in nanophotonic devices using ZnO nanorod quantum-well-structures. Univ. Tokyo　*Yatsui Takashi 1
9 Controlled Deposition of Silicon Nanowires on Substrate by Capillary Force Using Printing Method Panasonic, Advanced Technology Research Laboratories　Nakagawa Tohru
10 Summary and Future Prospect(15 min) Osaka University　Tomoji Kawai
Development of UV light emitting devices; organized by "Optoelectronics Frontier by Nitride Semiconductor"
Sept. 9 9:30〜17:00
9p-X-　/ 0
1 Recent Advancement of UV Light Emitting Devices − Introductory Talk- Ritsumeikan University 1　*Yasushi Nanishi 1
2 Small and Convenient Ultraviolet Light Sources - Toward the Realization of Ultraviolet Laser Diodes - Central Research Laboratories, Hamamatsu Photonics K.K.　*Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama and Hirofumi Kan
3 Optical Properties of Al-rich AlGaN-based Quantum Wells − In Comparison with InGaN-based Quantum Wells - Kyoto Univ. 1　*Kawakami Yoichi 1, Funato Mitsuru 1
4 Thick AlN growth by low-pressure HVPE using periodic patterned substrate Mie Univ.1, Kyushu Univ.2　Hiramatsu Kazumasa 1,Miyake Hideto 1,Okuura Kazuteru 1,Kuwano Noriyuki 2
Break 14:40〜15:00
5 Modified MEE and characterization of AlN and AlGaN quantum wells Kyoto Univ.　*Mitsuru Funato, Yoichi Kawakami
6 Alternate Source-Feeding MO-VPE Growth Technique and Intrinsic Optical Anisotropic Properties of AlGaN MQW laser Kogakuin Univ. 1　*Hideo Kawanishi 1
7 Emitting and p-type properties of In incorporated AlGaN and its application to high-efficiency deep-UV LEDs RIKEN 1, Panasonik Electric Works Co.Ltd. 2, Saitama Univ. 3, JST-CREST 4　*Hirayama Hideki 1,3,4, Fujikawa Sachie 1,4, Tsukada Yusuke 1,3,4, Norimatsu Jun 1,3,4, Takano Takayoshi 1,2, Noguchi Norimichi 1,2, Tsubaki Kenji 2, Kamata Norihiko 3,4
8 Discussion for development of UV emitting devices; Supported by MEXT Meijo Univ.　Hiroshi Amano
Novel computer architectures based on CMOS with emerging memory devices
Sept. 9 9:00〜17:15
9p-TA-　/ 0
1 Novel computer architectures based on CMOS with emerging memory devices Tokyo Inst. of Tech.1, JST-CREST2　*Sugahara Satoshi12
2 Low Power Design Techniques for CMOS LSI Shibaura Inst. of Tech.　*Usami Kimiyoshi
3 ERD Technology Using CMOS Platform Univ. of Tokyo 1　Toshiro Hiramoto 1
4 Perspective on future advanced microprocessors using emerging memory devices Tokyo Inst. Tech. 1, JST-CREST 2　*Yamamoto Shuu'ichirou 1,2, Sugahara Satoshi 1,2, Maejima Hideo 1
Break 14:45〜15:00
5 Ferroelectric-Based Low-Power LSI Technology ROHM Co.,Ltd. 1　*Hiromitsu Kimura 1, Jun Iida 1
6 Cell Structures of Phase Change NV-SRAM Kanazawa Univ.　Akio Kitagawa, Kazuya Nakayama
7 Unified CMOS with MRAM: Nonvolatile magnetic flip flop experimental results and discussion NEC Dev. Plat. Res. Labs.　*Tadahiko Sugibayashi 1, Noboru Sakimura 1, Ryusuke Nebashi 1, Naoki Kasaki 1
8 Functional MOSFETs based on Spin-RAM/ReRAM technologies and their nonvolatile SRAM/Flip-Flop applications Tokyo Institute of Technology 1,2, CREST-JST 3　Shuto Yusuke 1,3, Yamamoto Shuu'ichirou 2,3, Sugahara Satoshi 1,2,3
9 Closing Remarks Renesas Technology Corp. 1　Kawabata Kiyoshi
Career design for young scientists and engineers
Sept. 9 9:00〜17:00
9p-D-　/ 0
1 Opening Remarks Tokyo Institute of Technology　H. Ishiwara
2 Opening Remarks Olympus 1　Tsuchida Hirofumi 1
3 Objective of this symposium Toshiba Corporation　Miyoko O. Watanabe
4 Employment and Career Path for Engineers and Scientists Cabinet Office　M. Arimatsu
5 Studying abroad for career development Univ. Tokyo 1　Y. K. Kato 1
6 AIST Innovation School for Postdoctoral Fellows AIST　*Kanazawa Yasuo
7 The community expect for social role by your movements. Seikatsunettokenkyusho　*Hane Yu
Break 14:45〜15:00
8 HPK wants you to join us. Hamamatsu Photonics K.K. 1　Hara Tsutomu 1
9 Sony Wants You to Join Us Sony Corporation　H. Kajiura
10 Group Discussion 　
11 Presentation of Group Discussion Results 　
12 Closing Remarks Japan Women's University　K. Kodate
Advances in materials and devices of pi-electron systems
Sept. 9 9:00〜17:30
9p-K-　/ 0
1 New materials based on p-electron systems and new device architectures for high-performance field-effect transistors Hiroshima Univ. 1　* Takimiya Kazuo 1
2 High-performance organic thin-film transistors based on tetrathiafulvalene analogues PRI-AIST 1　*Hasegawa Tatsuo 1, Yamada Toshikazu 1
3 Electric field modulation of the graphene transistor Univ.Tsukuba　1, JST-CREST　2, MANA-NIMS　3　*Akinobu Kanda　12, Hisao Miyazaki　23, Kazuhito Tsukagoshi　23
4 Development of separation technology and devices of carbon nanotubes toward industrial applications NRI AIST 1, JST CREST 2　*Hiromichi Kataura 1,2, Takeshi Tanaka 1, Shunjiro Fujii 1, Yasuko Urabe 1, Yoko Kasuya 1,
5 Solution-processed organic thin-film transistors based on phase separation Adv. Mat. Lab., Sony Corp. 1　*Takahiro Ohe 1, Noriyuki Kawashima 1, Kazumasa Nomoto 1
Break 14:55〜15:10
6 Vertical-Type Organic ‘Power’ Transistors Fabricated by Spontaneous Patterning of Higher-Order Structures Chiba Univ.　Masakazu Nakamura
7 Three-dimensional organic field-effect transistors TRI Osaka 1,Osaka Univ. 2　*Mayumi Uno 1,2
8 High performance organic thin-film transistors for high frequency operation NanoQuine, Univ. Tokyo 1, IIS, Univ. Tokyo 2　Masatoshi Kitamura 1, Yasuhiko Arakawa 1,2
9 High-performance organic field-effect transistors with ionic liquid CRIEPI 1, Osaka Univ. 2　*S. Ono 1, K. Miwa 1,2, S. Seki 1, J. Takeya 2

10 Organic Transistor Integrated Circuits using Self-Assembled Monolayer School of Engineering, Univ. of Tokyo 1, Max Planck Institute for Solid State Research 2, INQIE, Univ. of Tokyo 3　　*Tsuyoshi Sekitani 1, Ute Zschieschang 2, Hagen Klauk 2, and Takao Someya 1,3
11 Expectation of New Functional Materials and Devices Chiba Univ.　Kazuhiro Kudo
Recent Advances and Future Prospects in Silicon-Based Solar Cells
Sept. 9 9:00〜17:30
9p-ZC-　/ 0
1 Introduction: Recent Advances and Future Prospects in Silicon-Based Solar Cells Osaka Univ. 1　*Toshihiko Toyama 1
2 Development of Thin Film Silicon Solar Cells in MHI Mitsubishi Heavy Indusries,LTD. Nagasaki R&D CENTER 1, Mitsubishi Heavy Indusries,LTD. ADVANCED Tech. R CENTER 2,Mitsubishi Heavy Indusries,LTD. Nagasaki Shipyard & Machinery Works 3　*nishimiya tatsuyuki 1,takeuchi yoshiaki 1,sakai satoshi 2,miyahara hiroomi 2,takatsuka hiromu 3,yamauchi yasuhiro 3,yamane tsukasa 3
3 Light trapping in thin-film silicon solar cells using self-ordering process AIST　Hitoshi Sai, Michio Kondo
4 The Development of Si-based Solar Cells at SHARP Sharp Corp. 1　*Tomohiro Machida 1
Break 15:10〜15:30
5 Photoluminescence Characterization of Solar Si Crystals ISAS/JAXA 1　*Michio Tajima 1, Masatoshi Ikebe 1, Takaaki Iwai 1, Yasuaki Iwata 1, Hiroki Sugimoto 1, Satoko Nakagawa-Toyota 1
6 Crystallographic Characterization by Electroluminescence Nara Inst. Sci. Technol.　*Fuyuki Takashi 1, Kitiyanan Athapol 1, Tani Ayumi 1
7 Rear Point Contact and Back Surface Reflection Structure with Honeycomb Textured Multi-Crystalline Regular and Thin Silicon Solar Cells Advanced Technology R&D Center 1, Nakatsugawa Works 2, Mitsubishi Electric Corp.　Matsuno Shigeru 1, Okamoto Tatsuki 1, Morikawa Hiroaki 2
New paradigm generated by spin current
Sept. 9 9:00〜17:30
9p-ZD-　/ 0
1 Introduction for a new stram of spin current Univ. of Tokyo 1, Tohoku Univ. 2　*Tabata Hitoshi 1, Mizuguchi Masateru 2
2 Theory of magnetoresistance in graphene / ferromagnetic metal junctions Nagoya Univ. 1, Kansai Univ. 2　Inoue Jun-ichiro 1, Yamamura Akinori 1, Honda Syuta 1, Itoh Hiroyoshi 2
3 Magnetoresistance effects in graphene/ferromagnet junctions Osaka Univ. 1, PRESTO-JST　*Shiraishi Masashi 1 2
4 Spin Motive Force Inst. for Materials Research　Sadamichi Maekawa
5 Spin electromotive force and huge magnetoresistance: can Faraday’s Law be extended ? Univ. of Tokyo 1, PRESTO 2, Tohoku Univ. 3, CREST 4, Univ. of Maiami 5　Pham Nam Hai 1, Shinobu Ohya 12, Masaaki Tanaka 12, Sadamichi Maeakwa 34, Stewart E. Barnes 5
Break 15:10〜15:30
6 Giant spin Hall effect in Au at room temperature Tohoku Univ. 1, NIMS 2　*Takanashi Koki 1, Sugai Isamu 1, Mitani Seiji 2
7 Theory of spin Hall effect in semiconductors and metals Tokyo Inst. Tech. 1, PRESTO-JST 2　*Shuichi Murakami 1 2
8 Computational Nanomaterials Design for Spincaloritronics: Design and Realization Osaka Univ. GSES　Katayama-Yoshida Hiroshi
9 Spin Seebeck effect IMR, Tohoku Univ.　Eiji Saitoh
Nano gap fabrication and the device application -Toward Nano Electronics devices using nano gap -
Sept. 9 9:00〜17:30
9p-ZG-　/ 0
1 Introductory Talk: Nano Gap Research for Real nanometer scale devices NRI-AIST 1, FEAT 2　*Shimizu Tetsuo 1, Yasuhisa Naitoh
2 Steps toward the practical use of the nanogap memories :
Prehistory of the research on the nanogap switch		 Funai Electric Adv. Appl. Tech. Res. Inst. Inc., 1　Ono Masatoshi 1,Tsuyoshi Takahashi 1,Sumiya Touru 1,Furuta Shigeo 1,Masuda Yuichiro 1
3 Ultrahigh-Dense-Nonvolatile Memory Using Nanogap Junction NRI-AIST 1, PRESTO-JST 2　*Yasuhisa Naitoh 1,2, Tetsuo Shimizu 1
4 Control and Fabrication of Nanogap-Based Nanodevices Using Electromigration Methods Tokyo Univ. of Agr. & Tech. 1　*Shirakashi Jun-ichi 1
5 Non-thermal origin of electromigration at metallic nanojunctions in the ballistic regime IIS Univ.of Tokyo 1, INQIE Univ.of Tokyo 2, JST CREST 3　*Hirakawa Kazuhiko 1,2,3, Umeno Akinori 1, Yoshida Kenji 1, Sakata Shuichi 1
Break 15:15〜15:30
6 Molecular Electronic Devices using Nanogap Electrode Fabricated by Molecular Ruler Method Osaka Univ. 1, MANA NIMS 2,　Tanaka Hirofumi 1, Hasegawa Tsuyoshi 2, Tajima Kotaro 1, Lee Junri 1, Hino Takami 1, Ogawa Takuji 1
7 Nanogap Electrode Fabrication by Electroless Plating and its Application toward Single Electron Devices Tokyo Tech 1, CREST-JST 2　*MAJIMA Yutaka1,2
8 Plasmonic Electromagnetic Field Enhancement Effects in Nanogap Space RIES-Hokkaido Univ. 1, PRESTO-JST 2　*Ueno Kosei 1,2
9 Structural change of nanogap electrodes investigated by scanning probe microscopy Kyoto Univ. 1, Kyoto Univ. IIC 2　Mizukami Takahiro 1, Miyato Yuji 1, Kobayashi Kei 2, Yamada Hirofumi 1
Single Molecule Electronics
Sept. 9 10:45〜18:00
9p-ZK-　/ 0
1 Introductory Tokyo Institute of Technology, JST-PRESTO
　* Manabu Kiguchi
2 Nano-Level Physical Characterization and the Next Generation-Molecular Electronic Devices Kyoto Univ.　Matsushige Kazumi
3 Prospects for Single Molecule Electronics Toyo Univ. 1　Yasuo Wada 1
4 Single molecular photovoltaic devices Tokyo Institute of Technology　Fujihira Masamichi
5 High-Precision Electrical Measurements and Development of Functions of π-Space Molecule by Molecular Resolution STM/STS Tokyo Tech　*MAJIMA Yutaka
6 Electrical conductance of single pi conjugated molecule Tokyo Institute of Technology, JST-PRESTO　* Manabu Kiguchi
Break 15:40〜16:00
7 Electrical conductance of oligothiophene molecular wires Sigma-Osaka Univ. 1, IMS 2　*Ryo Yamada 1, Shoji Tanaka 2, Hirokazu Tada 1
8 Local electronic structure of a carbon nanotube at metal surfaces RIKEN　*Kim Yousoo 1
9 Local heating in single-molecule junctions ISIR-SANKEN, Osaka Univ. 1, JST-PRESTO 2　*Taniguchi Masateru 1,2, Tsutsui Makusu 1, Kawai Tomoji 1
10 Towards farther development of single-molecular electronics -challenge of experiments and theory- Tohoku Univ.　Masaru Tsukada
Area activities for the human resource development for manufacturing and the education of science
Sept. 9 9:30〜17:15
9p-ZF-　/ 0
1 Introductory talk: Area activities for the human resource development for manufacturing and the education of science. Tokyo Univ. of Science 1, Teikyo Univ. 2　*Ando Shizutoshi 1, Mitsui Toshiharu 2
2 Visiting science experimentation and observation training for teachers of Elementary school Toyama Prefecture General Education Center Science information division　*Mizoguchi Hidekatsu
3 Exemplary Project of Science Education in Fukui Prefecture
-Visiting Schools and Assisting Teachers with Experiments in Science-		 Fukui Prefectural Institute for Educational Research　*Noguti masato
4 Corporate Initiatives：
　Experience in scientific experimental activities for children		 Hokuriku Energy Science Center　Eida Toshiharu
5 A trial to let youths study science ＆ technology Let's change youth's "interest" of science and technology into "voluntary intention" that is going to study it. Hokuriku Electric Power Supply　TODA Ichiro
Break 15:35〜15:45
6 Learn from the world and return to the community, Manufacturing and environmental technology education Toyama National College of Maritime Tech. 1, Toyama National College of Tech. 2　*Toga Shinji 1, Hayase Yoshikazu 1, Naruse Yoshinori 1, Chohji Tetsuji 2
7 Creative Education in the Yumekobo at Kanazawa Inst. of Technology - Development of an Autonomous Ground Vehicle and Project Management - Kanazawa Inst. of Technoloby　Sakamoto Takumi 1,Tani Masashi 1,Hattori Yoichi 1
8 “The Workshop for Refreshing Science in the Classroom at Hokuriku-Shinetsu Chapter” as One of Activities of the Committee of Public Service and Education in the Japan Society of Applied Physics Faculty of Engineering, Niigata Univ. 1, Graduate School of Science and Technology, Niigata Univ. 2, Center for Transdisciplinary Research, Niigata Univ. 3　*Nozomu Tsuboi 1, Takamasa Suzuki 2, Masashi Ohkawa 1, Kazunari Shinbo 1,Yasuo Ohdaira 1, Atsushi Baba 3, Haruo Iwano 1 and Takeo Maruyama 1
Recent Research Trend of Room Temperature Semiconductor Radiation Detectors
Sept. 9 9:30〜16:30
9p-TF-　/ 0
1 Introductory Talk: Recent Research Trend of Room Temperature Semiconductor Radiation Detectors. Univ. of the Ryukyus 1　*Higa Akira 1
2 THM growth and homogeneity of 4 inch diameter CdTe single crystals ACRORAD CO., LTD. 1　*Shiraki Hiroyuki 1, Funaki Minoru 1, Ando Yukio 1, Tachibana Akira 1, Ohno Ryoichi 1
3 MOVPE growth of thick CdTe layers, and application to radiation detectors Nagoya Inst. Tech.　*Kazuhito Yasuda1,Niraula Madan1, Hiroki Oka1, Kazuya Matsumoto1, Tomohiro Yoneyama1, Tomoya Nakanishi1, Daisuke Katou1, Hajime Nakajima1, Yasunori Agata1
4 Current trends in development of TlBr radiation detectors Tohoku Inst. Tech. 1, Tohoku Univ. 2　*Hitomi Keitaro 1, Kikuchi Yohei 2, Syoji Tadayoshi 1, Ishii Keizo 2
Break 15:25〜15:40
5 Development of High Energy Resolution CdTe Gamma-ray Imagers ISAS/JAXA 1　*Watanabe Shin 1
6 Research and Developmentof X-ray Imaging System using CdTe Radiation Detector Array Shizuoka Univ. 1, Hamamatsu Photonics 2　Toru Aoki 1, Hisashi Morii 1, Akifumi Koike 1, Takaharu Okunoyama 1, Bunji Shinomiya 1, Yoichiro Neo 1, Hidenori Mimura 1, Yasuhiro Tomita 2
The frontiers of III-V on Si devices
Sept. 9 10:00〜17:40
9p-TE-　/ 0
1 Introductory Talk: Recent Evolution in Compound Semiconductor Devices on Si Substrates Kyoto Univ.1　*Fujita Shizuo 1
2 Lattice-matched hetero-epitaxy of III-V on Si and monolithic optoelectronic integrated circuits Toyohashi Univ. of Tech.　*Furukawa Yuzo 1, Wakahara Akihiro 1, Yonezu Hiroo 1
3 III-V CMOS transistors on Si by using direct wafer bonding Univ. Tokyo　*Mitsuru Takenaka 1, Masafumi Yokoyama 1, Masakazu Sugiyama 1, Yoshiaki Nakano 1, Shinichi Takagi 1
4 GaN Power Devices on Si substrates Panasonic Corp. 1,2　*Ishida Masahiro 1, Ueda Tetsuzo 1, Tanaka Tsuyoshi 1, Ueda Daisuke 2
Break 15:40〜16:00
5 Exploration for device applications of ZnO TFTs on Si substrates Nanomaterials Microdevices Research Center, Osaka Inst. of Tech.　*Shigehiko Sasa, Kazuto Koike, Ken-ichi Ogata, Mitsuaki Yano, Toshihiko Maemoto, and Masataka Inoue
6 Hybrid III-V membrane-type photonic devices on Si substrate QNERC, Tokyo. Inst. Tech. 1, EE Dept., Tokyo. Inst. Tech. 2
　*Shigehisa Arai 1,2, Nobuhiko Nishiyama 2
7 III-V Solar Cells on Si Toyota Tech. Inst. 1　Masafumi Yamaguchi 1
8 　
Current Status of Research on Functional Oxides toward Sustainable Society and Their Future
Sept. 10 9:00〜19:00
10a-H-　/ 0
1 Current Status of Research on Functional Oxides toward Sustainable Society and Their Future -Introductory Talk - ISIR-Sanken, Osaka Univ. 1.　*Hidekazu Tanaka 1
2 Current Status and Future Aspect of Dye-sensitized Solar Cells Advanced Photovoltaics Center, National Inst. for Mater. Science　Liyuan Han
3 All Solid State Thin Film Batterie using Oxide Glasses IMRAM, Tohoku University　Junichi Kawamura
4 Oxide Thermoelectrics -An Approach using Epitaxial Films- Nagoya Univ. 1,JST-PRESTO 2　*Ohta Hiromichi 1,2
Break 10:40〜10:55
5 Function cultivation from unusual structures in oxides MSL, Tokyo Tech.1　*Toshio Kamiya, Hideo Hosono
6 Evolution of ZnO based devices ROHM CO. LTD.,　Ken Nakahara
7 Development of an Electrochemical Reactor for Highly Selective NOx Decomposition AIST,　Koichi Hamamoto 1，Yoshinobu Fujishiro 1, Masanobu Awano 1
8 Gas-phase photocatalytic reaction in titanium dioxide and its possibility for hydrogen source Kyoto Univ. 1　*Kei Noda 1,Kazumi Matsushige 1
9 Closing Remarks: Current Status of Research on Functional Oxides toward Sustainable Society and Their Future Tohoku Univ., IMR 1　*Ohtomo Akira 1
Renewable energy cycle by solar electricity generating system
Sept. 10 9:00〜17:00
10p-ZD-　/ 0
1 Introductory: Renewable energy cycle using solar electric generation CIR Tohoku Univ. 1, Environmental Studies, Tohoku Univ. 2　Fujii Katsushi 1, Itoh Takashi 1, Tohji Kazuyuki 2
2 Solar-PV in GW era Showa Shell Sekiyu　Katsumi Kushiya
3 Future Prospect of Electrochemical Energy Conversion/Storage Devices. Yamagata Univ. 1　Tatsuo Nishina 1
4 High-brightness, high-efficiency LEDs for general lighting CIR, Tohoku Univ 1, WaveSquare 1　*Takafumi Yao 1, Katsushi Fujii 1, Meoung-Whan Cho 2
Break 14:55〜15:15
5 Inorganic phosphors for white LEDs as next-generation light sources Tokyo Univ. Tech. 1　*Yamamoto Hajime 1
6 Residential AC／DC Hybrid Distribution System Panasonic Electric Works Co., Ltd.　*Koshin Hiroaki 1,Inakagata Satoru 1,Kagawa Takuya 1
7 Eco-house and energy self-support Tohoku Univ. 1　*Kazuyuki Tohji 1, Hideyuki Takahashi 1, Yoshinori Sato 1, Ryuzou Furukawa 1
Silicon Nanoelectronics - The state-of-the-art CMOS Device Technology and Variability Suppression -
Sept. 10 9:15〜17:00
10p-TE-　/ 0
1 Introductory Talk: The Forefront in High-Performance CMOS and Variability/Fluctuation Control of Device Characteristics Nagoya Univ. 1　*Shigeaki Zaima 1
2 Performance Progress and Future Issues of Advanced CMOS Devices Sony Corporation　Hitoshi Wakabayashi
3 Metal/High-k Gate Stack Structures for Controlling Variability of MOS-FET Waseda Univ. 1, NIMS 2　* Kenji Ohmori 1, Toyohiro Chikyow 2, Keisaku Yamada 1
4 Interfacing Field Control for Ge-CMOS Univ. Tokyo 1, JST-CREST 2　Toriumi Akira 1,2, Kita Koji 1,2, Nishimura Tomonori 1,2, Nagashio Kosuke1,2
5 Source/Drain Electrodes of Ferromagnetic Silicide for Si-based Spin-transistor Kyushu University1, PRESTO JST2, Inamori Center3, Kansai University4, Tokyo City University5　*M.Miyao1, K.Hamaya1,2, T.Kimura3, H.Itoh4, K.Sawano5
Break 15:15〜15:30
6 New Normalization Methodology of Variability in Scaled MOSFETs Considering Impurity Depth Profile Univ. of Tokyo 1, MIRAI-Selete 2, Hiroshima City Univ. 3　 ○T. Hiramoto1,2, A. T. Putra1, T. Tsunomura2, A. Nishida2, S. Kamohara2, K. Takeuchi2, and S. Inaba2, and K. Terada3
7 Study on variability in transistor characteristics due to random telegraph noise Hitachi America 1, Hitachi 2　*Naoki Tega 1, Hiroshi Miki 1, Kazuyoshi Torii 2
8 Comprehensive Analysis of Variability Sources of FinFET Characteristics AIST　*Meishoku Masahara 1, Takashi Matsukawa 1, Shin-ichi O'uchi 1, Kazuhiko Endo 1, Yongxun Liu 1, Kunihiro Sakamoto 1
Progress in Characterization and Control of Multinary Phosphors
Sept. 10 9:00〜17:15
10p-TC-　/ 0
1 Introductory Talk: Symposium on Progress in Characterization and Control of Multinary Phosphors Shizuoka Univ.　*Hara Kazuhiko
2 Progress in evaluation and control of multinary phosphor materials NHK Sci. & Tech. Res. Labs.　S. Okamoto, K. Tanaka and T. Sakai
3 Control of substitution site of Mn2+ centers in CuAlS2:Mn,Si red phosphor and their luminescent properties Tottori Univ. 1, TEDREC 2　*Ohmi Koutoku 1, Ohashi Kazuhito 1, Miyamoto Yoshinobu 2
4 Assessment of the effect of REE addition on the Mn red emission in Ca thiogallates by means of PL, PLE and ESR Nihon University　Takizawa Takeo
5 Organometallic vapor phase epitaxy growth and optical properties of Eu-doped GaN Osaka Univ. 1　*Nishikawa Atsushi 1, Kawasaki Takashi 1, Furukawa Naoki 1, Terai Yoshikazu 1, Fujiwara Yasufumi 1
6 Anomalous rare earth doping in aluminum nitride based phosphor NIMS 1,Tohoku Univ. 2　*Takeda Takashi 1, Hirosaki Naoto 1, Xie Rong-Jun 1, Kimoto K 1, Saito Mitsuhiro
Break 15:25〜15:40
7 Energy Trasnfer Process and Luminescent Properties of Self-organized ErSiO system Univ. Electro-Communications　Kimura Tadamasa, Isshiki Hideo
8 Preparation of highly oriented luminescent perovskite films using a unilamellar nanosheets seed-layer AIST 1　*Takashima Hiroshi 1
9 Development of multi-component phosphor thin films using combinatorial sputtering method, and TFEL device application Kanazawa Inst. of Tech. 1　*Toshihiro Miyata 1 and Tadatsugu Minami 1
10 Closing 　― Attractive applications of Multinary Compounds ― Mie Univ.　Hideto Miyake1
Digital Optics as New Optical Technology
Sept. 10 9:00〜17:30
10p-K-　/ 0
1 Introductory Talk: Digital Optics as New Technology Wakayama Univ. 1　Nomura Takanori 1
2 Digital Optics from Coherence Measurement to UFO(Ultra-fast Focal-point Optics) Osaka Univ.　Itoh Kazuyoshi
3 Incoherent Computer-generated holography using projection images Utsunomiya Univ 1, Univ. Tsukuba 2, Nagoya Med. Center 3　*Toyohiko Yatagai1,2, Kenn-ichi Miura 2, Masahide Itoh 2, Syuu Ichihara 3
Break 15:15〜15:30
4 Color digital holography with R, G and B wavelength-shifting interferometry Dept. Appl. Phys., Tokyo Univ. Science　Yukihiro Ishii
5 Computational Compound-eye Imaging Osaka Univ. 1　*Jun Tanida 1
6 Closing talk - Digital optics extends new fields in information optics - Utsunomiya Univ. 1　*Hayasaki Yoshio 1
"NeoSilicon" Materials towards "More than Moore"
Sept. 10 9:00〜17:40
10p-TA-　/ 0
1 Introductory Talk: Structural control and novel functions of NeoSilicon Tokyo Tech.　Oda Shunri
▲ 2 Transport properties of NeoSilicon materials Imperial College, London　Durrani Z.A.K.
▲ 3 CNTs vs SiNWs for future electronics Cambridge University　W.I. Milne
4 Functional silicon nanoelectronic devices co-integrated with nanoelectromechanical structures Univ. of Southampton 1, QNERC Tokyo Tech 2, SORST JST 3　*Hiroshi Mizuta 1,3, Yoshishige Tsuchiya 1,3, Shunri Oda 2,3
5 Diagnostics of growth processes of nano-Si crystalline particles in plasmas Kyushu Univ. 1　Masaharu Shiratani 1, Kazunori Koga 1
Break 15:05〜15:20
6 Monolithically Integrated Electron Beam Sensor and Single-electron Detection by BioCMOS Technology Nagoya Univ. 1, SORST-JST 2　*Kazuo Nakazato 1,2
7 Light Emitting Device Based on Nanocrystalline Silicon Graduate School of Eng., Tokyo Univ. of A & T　1, SORST-JST 2　Koshida Nobuyoshi
8 Optical properties of impurity-doped silicon nanocrystals Kobe Univ.　Minoru Fujii 1
9 Application of Neo-Silicon Central Research Lab., Hitachi Ltd. 1, SORST, JST 2　Shin-ichi Saito 1,2, Hiroyuki Uchiyama 1,2
10 Silicon Quantum Dots Solar Cells Tokyo Tech 1　Konagai Makoto 1, Kurokawa Yasuyoshi 1, Miyajima Shinsuke 1
11 Future Outlook of Neo-Silicon Hitachi Ltd. 1　Takahiro Onai 1
Recent progress in metal oxides: its fundamentals and applications
Sept. 10 9:00〜18:15
10p-G-　/ 0
1 New aspects in the research field opened by metal oxides NIMS　Aono Masakazu
2 Nonstoichiometry-induced carrier modification and switching phenomena using ion migration (30) Univ. Tokyo 1　*Yamaguchi Shu 1, Tsuchiya Takashi 1, Miyoshi SHogo 1, Naotaka Sasaki 1, Oyama Yukiko 1
3 Emergent Oxide Quantum Interfaces WPI-AIMR Tohoku Univ. 1, IMR Tohoku Univ. 2, CREST-JST　*Kawasaki Masashi 1, 2, 3,
4 Progress in Iron-based superconductors FRC,TIT 1 MSL,TIT 2　*Hideo Hosono 1,2
Break 15:30〜15:45
5 Behavior of Electrons and Ions in Oxides: An Approach using First-Principles Calculations Univ. Tokyo 1　*Satoshi Watanabe 1，Tingkun Gu 1, Shusuke Kasamatsu 1, Tomofumi Tada 1
6 Redox-type electrochemical resistance-based memory, ReRAM NIRC-AIST 1　Hiro Akinaga 1, Hisashi Shima 1
7 Electrochemical resistive switches which control cations NIMS 1　*Hasegawa Tsuyoshi 1, Terabe Kazuya 1, Tsuruoka Tohru 1, Haemori Masamitsu 1, Chikyo Toyohiro 1, Aono Masakazu 1
8 Application for photo detective sensor Osaka Univ. 1, MANA NIMS 2　Tanaka Hirofumi 1, Hino Takami 1, Hasegawa Tsuyoshi 2, Ito Yaomi 2, Aono Masakazu 2, Ogawa Takuji 1
9 Atomic switch embedded into Cu interconnect NEC 1, NIMS 2　*Toshitsugu Sakamoto 1, Munehiro Tada 1, Naoki Banno 1, Yukihide Tsuji 1, Yukishige Saitoh 1, Yuko Yabe 1, Hiromitsu Hada 1, Noriyuki Iguchi 1, Masakazu Aono 2
10 Closing remarks on new frontier of oxide materials NIMS　Chikyow Toyohiro
Hybrid/Composite Materials for Advanced
Sept. 11 9:00〜12:15
11a-ZC-　/ 0
1 Introductory talk for hybrid and composite materials Tohoku Univ. 1　Fujiwara Takumi 1
2 Fine-Patterning of Organic-Inorganic Hybrid Materials for Optical Application NIMS　*Segawa Hiroyo
3 Synthesis of Apatite-based materials with Functional Elements and Application to Environmental and Biomedical fields Osaka Prefecture Univ.1, Osaka Center IMR Tohoku Univ.2　Nakahira Atsushi 1,2
4 Optical functional devices using plasmonic metamaterials and their fabrication technique RIKEN 1, JST PRESTO 2　*Takuo Tanaka 1, 2
Break 10:55〜11:05
5 Novel Solar Cells using Interfacial Complex of Titanium Dioxide and Organic Compounds RCAST, Univ. of Tokyo　*Segawa Hiroshi
6 Fabrication of solution-processable organic-inorganic hybrid polymer field-effect transistors Osaka Pref. Univ. 1, RIMED Osaka Pref. Univ. 2, Univ. Tokyo 4, OMTRI 3　Nagase Takashi 1,2, Hamada Takashi 3, Kobayashi Takashi 1,2, Matsukawa Kimihiro 4, Naito Hiroyoshi 1,2