|
Symposium |
| Research
frontier in low-dimensional fullerene nanomaterials |
| September 4 9:00〜16:25 |
| 4a-F- / 0 |
| | 1 | Introductory Talk: Research frontier in low-dimensional fullerene nanomaterials | NIMS Miyazawa Kun-ichi 1 |
| | 2 | Synthesis of fullerene derivative nanowiskers and their characterization by TEM and Raman spectroscopy | Kyoritsu Univ. Pharm. 1, Univ. Tukuba 2, NIMS 3 Mashino Tadahiko 1, Nakamura Shigeo 1, Saito Kazuma 2, Kizuka Tokushi 2, Miyazawa Kun`ichi 3 |
| | 3 | Chemical functionalization of endohedral metallofullerenes | NIMS1, Univ. of Tsukuba2, Tokyo Gakugei Univ.3, IMS4 Takatsugu WAKAHARA1, Michio YAMADA2, Yuko IIDUKA2, Hidefumi NIKAWA2 Takahiro TSUCHIYA2, Yutaka MAEDA3, Takeshi AKASAKA2, Naomi MIZOROKI4, Shigeru NAGASE4 |
| ▲ | 4 | Synthesis and structural investigation of metal/metal ion doped fullerene nanowhiskers/nanotubes | NIMS 1 *Marappan Sathish 1. Kun-ichi Miyazawa 1, Toshio Sasaki 1 |
| | | Break 10:25〜10:35 | |
| | 5 | Structure and physical properties of fullerene-derivative crystals fabricated by the liquid-liquid precipitation method | Hosei Univ. *Hironori Ogata1,Satoru Motohashi1, Yasutaka Motohashi1 |
| ▲ | 6 | Selective Growth of C60 Nanofibers Synthesized by the Liquid-liquid Interfacial Precipitation Method | NIMS 1 *Ringor Cherry 1, Miyazawa Kun-ichi 1 |
| | 7 | Shape-controlled fullerene micro- and nanocrystals | IMRAM, Tohoku Univ.1 *Oikawa Hidetoshi 1 |
| ▲ | 8 | Rapid Fabrication Process for Fullerene 1-D Crystals | NIMS *Cha Seungil 1, Kun-ichi Miyazawa 1 |
| | | Lunch 12:15〜13:15 | |
| 4p-F- / 0 |
| | 1 | Motion of C60 molecules in fulleren C60 nanowhiskers and nanotubes | NIMS 1 Kitazawa Hideaki 1, Hashi kenjiro 1, Tuerxun Wernisha 1, Furubayashi Takao 1, Goto Atsushi 1, Shimizu Tadashi 1, Miyazawa Kunichi 1 |
| | 2 | Growth and mechanical property of C60 nanowhiskers | Yokohama City Univ. 1 Watanabe Mami 1, Kojima Kenichi 1, *Tachibana Masaru 1 |
| | 3 | Synthesis of carbon nanocapsules using fullerene nanowhiskers and their mechanical and electric properties | Nagoya Univ. 1, Univ. Tsukuba 2, NIMS 3 *Koji Asaka 1, Ryoei Kato 2, Kun’ichi Miyazawa 3, Tokushi Kizuka 2 |
| | 4 | Characterization of Fullerene nanomaterials by SPM | Natl. Inst. Mat. Sci. 1 Daisuke Fujita 1, Mingsheng Xu 1, Masayo Kitahra 1 |
| | | Break 14:55〜15:05 | |
| | 5 | Optical Properties and Photo-induced Effects of C60 Nanocrystals, Nanowhiskers and Nanotubes | Inst. of Materials Science, Univ. of Tsukuba *Matsuishi Kiyoto, Minamiru Kenta, Naitou Kazuki |
| | 6 | Electronic Properties of Low-Dimensional Fullerene Nanoscale Materials | Tohoku Univ. 1 *Kumashiro Ryotaro 1, Tanigaki Katsumi 1 |
| | 7 | Optimization of Metal Electrode for C60 Fullerene FET | Chiba Univ., Advanced Integration Science Ochiai Yuichi 1 |
| | 8 | Summary | Natl. Inst. Mat. Sci. 1 Daisuke Fujita 1 |
| Quick reflectometry
with X-rays and/or neutrons - studying changes of nano-structures at surfaces
and buried interfaces |
| September 4 9:30〜17:30 |
| 4a-X- / 0 |
| | 1 | Introductory Talk: Recent advances in quick reflectometry with X-rays and neutrons | Nat'l Inst. for Mater. Science 1 Kenji Sakurai 1 |
| | 2 | Quick X-ray Reflectometry: Growth of Semiconductor Nanostructures | JAEA 1 *Takahasi Masamitu 1 |
| | | Break 10:30〜10:50 | |
| | 3 | Aplication of q-XR for Soft Interfaces. | Ritsumeikan Univ. 1, JASRI 2 *Yohko F. Yano 1, Tomoya Uruga 2, Hajime Tanida 2, Hidenori Toyokawa 2, Yasuko Terada 2, Masashi Takagaki 2 |
| | 4 | In-situ Structural Analysis of BPDA-PPD Polyimide Thin Film using Two-dimensional Grazing Incidence X-ray Diffraction | Asahi KASEI 1 Matsuno Shin-ya 1, Kikuma jun 1 |
| | | Lunch 12:10〜13:30 | |
| 4p-X- / 0 |
| | 1 | Evaluation of interdiffusion of cyclic polymers and in-situ observation | Nagoya Univ. 1, Kyushu Univ. 2, KEK-KENS 3 *Daisuke Kawaguchi 1, Atsushi Takano 1, Keiji Tanaka 2, Toshihiko Nagamura 2, Naoya Torikai 3, Yushu Matsushita 1 |
| | 2 | Mechanism of Giant Uni-lamellar Vesicle Formation from Lipid/Additive Mixture Film | KEK 1, Kyoto Univ. 2 *Yamada Norifumi 1, Torikai Naoya 1, Hishida Mafumi 2, Seto Hideki 2 |
| | | Break 14:50〜15:10 | |
| | 3 | Improvement of liquid interface spectrometer at SPring-8 | JASRI 1, Ritsumeikan Univ. 2, Kyushu Univ. 3, Utsunomiya Univ. 4 Uruga Tomoya 1, Tanida Hajime 1, Toyokawa Hidenori 1, Yano Yoko 2, Takiue Takanori 3, Iimura Kenichi 4, Terada Yasuko 1, Takagaki Masafumi 1 |
| | 4 | Instrumentation for quick X-ray reflectometory: a new X-ray reflectometer utilyzing a crystal polychromtor | Photon Factory, KEK Tadshi Matsushita |
| | 5 | Development of new optical devices and its potential applications | Kyoto Univ. 1, Grad.Sch.Kyoto Univ. 2, Tohoku Univ. 3 *Okuda Hiroshi 1, Ochiai Shojiro 1, Kuno Keiji 2, Nakajima Kazuo 3, Fujiwara Kozo 3 |
| | 6 |
Summary and Disucussion |
|
| Leading
edge of development for nanoimprint replicated materials |
| September 4 13:00〜17:00 |
| 4p-ZN- / 0 |
| | 1 | The patent application trend of nanoimprint technology | Japan Patent Office 1 Yamamoto Shinya 1 |
| | 2 | Fluorinated materials for Nanoimprint Lithography | ASAHI GLASS Co.,LTD. RESEARCH CENTER 1 *Yasuhide Kawaguchi 1 |
| | 3 | Photo curable resin for UV-nanoimprint | Toyo Gosei *Nobuji Sakai 1 |
| | 4 | Photo-curable Compounds well-adapted for Nano-Imprints | Daicel Chemical Industries, LTD. 1, Univ. of Hyogo 2 *Miyake Hiroto 1, Iyoshi Syuso 1, Nakamatsu Ken-ichiro 2, Matsui Shinji 2 |
| | | Break 14:40〜14:55 | |
| | 5 | Introduction of Optical Products Manufactured by Thermal Nanoimprint Lithography | Soken Chemical & Engineering Co.,Ltd Mizawa Takahide 1, Tashiro Hiroko 1, Horaguchi Hiroya 1 |
| | 6 | Development of Resin for Thermal Nanoimprint Process | Maruzen Petrochemical CO.,LTD *Takaya Yoshiaki 1 |
| | 7 | Application consideration of SU-8 as nanoimprint material | Nippon Kayaku Co., Ltd. 1Univ. of Hyogo 2Meisyo Kiko Co., Ltd. 3 *Kazuhiko Nagai 1Ken-ichiro Nakamatsu 2Shinji Matsui 2Katsuhiko Tone 3 |
| | 8 | Room-Temperature Nanoimprinting Using SOG materials | Tokyo Ohka Kogyo 1, Univ. of Hyogo 2 *Takeuchi Yoshiyuki 1, Otaka Shoji 1, Taneichi Noriaki 1, Okui Toshiki 1, Nakamatsu Kenichiro 2, Matsui Shinji 2 |
| | 9 | Dry Film Resist for Nanoimprint Lithography | Asahi Kasei EMD Corp. 1, Univ. of Hyogo 2, *Hideki Matsuda 1, Shoichiro Tonomura 1Ken-ichiro Nakamatsu 2, Shinji Matsui 2 |
| Frontier
of nanoscale structure control - A presymposium of ACSIN-9 - |
| September 4 9:00〜17:20 |
| 4p-ZQ- / 0 |
| | 1 | Introduction to frontier of nanoscale structure control-A presymposium of ACSIN-9- | Tokyo Univ. Science 1,Univ. of Tsukuba 2 *Yoshikazu Homma 1,Hidemi Shigekawa 2 |
| | 2 | Bi nanoline as a template for new nanomaterials synthesis | NIMS 1 Kazushi Miki 1,2 |
| | 3 | Heterostructures based on GaP nanowires on Si substrates | NTT Basic Research Labs. 1 *Tateno Kouta 1,Zhang Guoqiang 1,Sogawa Tetsuomi 1,Nakano Hidetoshi 1 |
| | 4 | Selective Diameter Control of Single-Walled Carbon Nanotubes in the Gas-Phase Synthesis | AIST 1, JST PRESTO 2 *Saito Takeshi1,2, Ohshima Satoshi1, Okazaki Toshiya1, Ohmori Shigekazu1, Yumura Motoo1, Iijima Sumio1 |
| | 5 | Formation and characterization of quantum dots produced by self-organization phenomena | Univ. Tokyo, CREST-JST 1 *Ichikawa Masakazu 1 |
| | | Break 15:05〜15:20 | |
| | 6 | Single electron devices fabricated by crystal growth and lithography | RCIQE, Hokkaido Univ 1, Graduate School of Inform. Sci. Tech, Hokkaido Univ 2 Fukui Takashi 1,2, Motohisa Junichi 2 |
| | 7 | Application of nanoscale structures for nanoelectromechanical systems (NEMS) | NTT BRL 1 Hiroshi Yamaguchi 1 |
| | 8 | Fabrication of Biological Nano-Structures and Characterization of Interaction Forces | TITech1, RIKEN FRS2 ○Masahiko Hara1,2, Tomohiro Hayashi1,2,Wang Tong2,Toshihide Kobayashi2 |
| | 9 | Fabrication of Functional Nanostructures by Metallization of Molecular Assembly System | RIES, Hokkaido Univ. 1, Graduate School of Science, Hokkaido Univ. 2, CREST, JST 3 *Kuniharu Ijiro 1,3, Aya Tanaka 2, Masato Sato 2, Yuichi Hashimoto 1, Yasutaka Matsuo 1 |
| Recent
development of commercialization of compound semiconductor photovoltaic
cells |
| September 4 13:30〜17:45 |
| 4p-L- / 0 |
| | 1 | Introduction : Thin Film Semiconductor Photovoltaic Cells - Present and Future - | Ryukoku Univ. Takahiro Wada1 |
| | 2 | Fabrication of High Efficiency CIS Solar Cells | Tokyo Tech QNERC 1, Tokyo Tech Phys. Elect. 2 *Yamada Akira 1, Chiba Yoshiyuki 2, Nakashiba Tetsuya 2, Kawamura Masahiro 2, Konagai Makoto 2 |
| | 3 | | AIST1, KUT2, TUS3 S. Niki1, K. Sakurai1, S. Ishizuka1, A. Yamada1, N. Terada2, and H. Nakanishi3 |
| | 4 | Selenization and sulfurization as a mass-production technology for CIS-based Thin-film PV | Showa Shell Sekiyu K.K. Katsumi Kushiya |
| | | Break 15:30〜15:45 | |
| | 5 | Characterization of Band Alignments at Interfaces in CIS-based Solar Cells | Kagoshima Univ. 1, AIST 2 *Terada Norio 1,2, Kashiwabara Hirotake 1, Teshima Shinpei 1, Masamoto Keimei 1, Watanabe Yuusuke 1, Niki Shigeru 2, Sakurai Keiichiro 2, Ishizuka Shogo 2, Yamada Akimasa 2, Matsubara Koji 2 |
| | 6 | Development of Super-High Efficiency Solar Cells | SHARP Corp. *Takamoto Tatsuya 1 |
| | 7 | Current status of research of quantum dot solar cells | Inst. Appl. Phys., Univ. Tsukuba *Yoshitaka Okada 1 |
| | 8 | Development and Utilization of Compound Semiconductor Space Solar Cells | JAXA/IAT 1, JAEA/Takasaki 2 Imaizumi Mitsuru 1, Ohshima Takeshi 2 |
| Recent development
of micro- and nano-structured optical elements |
| September 5 13:00〜16:50 |
| 5p-R- / 0 |
| | 1 | Recent Development of Optical Elements with Mico- and Nano-Structured Surfaces | Optical Technology Department, Olympus Corporation Tsuchida Hirofumi |
| | 2 | Microstructure used in Infrared Optical Elements | Mitsubishi Electric Corp. 1 *Nakano Takayuki 1, Tamagawa Yasuhisa 1 |
| | 3 | Optical Pickup using Polarization Longitudinal Slit | Ricoh Company, Ltd. 1, Photonic Lattice, Inc. 2 Tetsuya Ogata 1, Shigeru Oouchida 1, Kenya Yokoi 1, Takayuki Kawashima 2, Shoujirou Kawakami 2 |
| | 4 | Concentric Polarizer and Laser Beam with Axially Symmetric Polarization | Tohoku Univ. 1, Photonic Lattice 2 Shunichi Sato 1, Yuichi Kozawa 1, Takashi Sato 2, Yoshihiko Inoue 2, Shojiro Kawakami 2 |
| | 5 | Linear encoder using resonant grating | Tohoku Univ. *Kazuhiro Hane 1, Bong-Seok Choi 1, Yoshiaki Kanamori 1 |
| | | Break 14:45〜15:00 | |
| | 6 | Organic Light-Emitting Devices with Photonic Crystals | Kyoto Univ.1, Pioneer 2 Masayuki Fujita 1, Kuniaki Ishihara 1, Takashi Asano 1, Susumu Noda 1, Hiroshi Ohata 2, Akira Hirasawa 2, Satoshi Miyaguchi 2 |
| | 7 | Mold fabrication technology for anti-reflection nano-structure | CAN-FOR AIST 1 *Kazuma Kurihara 1, Takashi Nakano 1, Tominaga Junji 1 |
| | 8 | Fabrication of Next-Generation Nanostructured Photonic Devices by Precision Glass Molding | KONICA MINOLTA OPTO, INC. Toshiharu Mori |
| | 9 | Technological strategy for advanced micro and nano-structured optical elements | Osaka Prefec. Univ. * Kikuta HIsao 1 |
| Novel system
for energy generation and environmental cleaning by light and semiconductors
|
| September 5 13:00〜17:10 |
| 5p-M- / 0 |
| | 1 | Introductory: Novel system for energy generation and environmental cleaning by light and semiconductors | CIR, Tohoku Univ.1, Tokyo Univ. of Science2 Katsushi Fujii1, Takashi Itoh1, Kazuhiro Ohkawa2 |
| | 2 | Photoelectrochemical Functions of Metal Nanoparticle-Semiconductor Composites | Univ. of Tokyo 1, JST 2 *Tatsuma Tetsu 1,2 |
| | 3 | Electrodeposition of Nanoporous ZnO/Dye Hybrid Thin Films for Dye-Sensitized Solar Cells | Gifu Univ. Tsukasa Yoshida |
| | 4 | Visible Light Induced Water Splitting by Two-step Photoexcitation and Iodate/Iodide Shuttle Redox Mediator | Hokkaido Univ. 1 Ryu Abe 1 |
| | 5 | | |
| | | Break 14:50〜15:05 | |
| | 6 | Overall Water Splitting under Visible Light on Oxynitride Photocatalysts | Univ. Tokyo, Dept.Chem.Sys.Eng. *Domen Kazunari 1 |
| | 7 | Solar electric generation and environmental cleaning based on the dye-sensitized semiconductor technology | Toin Univ. Yokohama *Tsutomu Miyasaka |
| | 8 | Hydrogen production by solar energy conversion using sulfur circulation. | Tohoku Univ. 1 Kazuyuki Tohji 1 |
| | 9 | In Situ Spectro-Photoelectrochemical Analysis for Hydrogen Evolution on GaN Electrodes | Center for interdisciplinary Research, Tohoku Univ. *Takashi Itoh 1, Katsushi Fujii 1, Takafumi Yao1 |
| | 10 | Possibility of Nitride Photocatalyst for H2 Evolution | Tokyo Univ. of Science 1, JST-ERATO 2 *Ohkawa Kazuhiro 1,2 |
| The front
activities for disseminating the knowledge concerning radiation |
| September 5 13:00〜17:20 |
| 5p-ZD- / 0 |
| | 1 | Introductory talk: Significance of the Dissemination of the Knowledge Concerning Radiation | Osaka Prefecture Univ. Okuda Shuichi |
| | 2 | Education for university students, teachers and the general public using the Kinki University Reactor | Atomic Energy Research Inst., Kinki Univ. 1 *Tsuruta Takao 1 |
| | 3 | Activities in KURRI - Aim to realize the concept of "Kumatori science park" - | Res. Reactor Inst. Kyoto Univ. (KURRI) 1 * Shiroya Seiji 1 |
| | 4 | Status of the Activities for Disseminating the Knowledge Concerning Radiation at Osaka Prefecture University | Osaka Prefecture Univ. Okuda Shuichi |
| | 5 | Activity of the "Kansai Atom Science Club(k-ask) " | Osaka Pref. Univ.1 Furuta Masakazu 1 |
| | | Break 15:15〜15:30 | |
| | 6 | Community Squares of Music and Science | Fac. of Engineering, Niigata Univ. Ohta Masatoshi |
| | 7 | Report on Our Activities to Spread Knowledge about Radiation in Musashi Institute of Technology | Musashi Inst. of Tech. Okada Yukiko 1, Mochiki Koh-ichi 1 |
| | 8 | Activities of RADA in promotion of radiation | RADA 1 *Tanase Masakazu 1, Funayama Yoshirou 1, Tanaka Osamu 1 |
| | 9 |
Discussion |
|
| Silicon
materials technology for active devices: From ULSI tomorrow to environment-preserving
devices |
| September 5 13:00〜17:25 |
| 5p-ZN- / 0 |
| | 1 | Introduction | Niigata Univ., Center for Quantum Materials Science *Hiroshi Yamada-Kaneta |
| | 2 | Recent progress and Future trend of Silicon crystal technology in Rordmap. | Fujitsu Ltd Aizuwakamatsu plant1 *Toshiya Sato1 |
| | 3 | Development and technology of Silicon Single Crystal Wafer in a Next Generation Semiconductor Devices | Covalent Materials Coropration *Koji Izunome |
| | 4 | Electronic Orbital and Electric Quadrupole of Vacancy in Silicon | Graduate School of Scien. and Tech. , Niigata Univ. 1, Cent. for Quantum Materials Science, Niigata Univ. 2, Insti. for Materials Research, Tohoku Univ. 3 *Goto Terutaka 1,2, Kaneta Hiroshi 2, Hikin Masatoshi 1, Nemoto Yuichi 1,2, Nakamura Shintaro 3 |
| | 5 | Large-scale ab-initio/molecular-dynamics analyses on Si vacancy | Okayama Univ. 1, Niigata Univ. 2 *Kenji Tsuruta 1, Hiroshi Iyetomi 2 |
| | | Break 15:10〜15:25 | |
| | 6 | Diffusion and gettering mechanism for Cu by using First-principles | Renesas Technorogy corp 1,Osaka Univ. ISIR. 2 *Matsukawa Kazuhuto 1,Hattori Nobuyoshi 1,Murakami Eiichi 1,Shirai Koun 2,Katayama-Yoshida Hiroshi 2 |
| | 7 | Current state and problems of silicon crystal for solar cells | Toyota Technological Int. 1 Yoshio Ohshtia 1, Koji Arafune 1, Masafumi Yamaguchi 1 |
| | 8 | Technical Issues And Their Prospects for Solar Grade Silicon | Si Development Dept. Wakamatsu Satoru |
| | 9 | Materials Issues of SiC Semiconductor Technologies | Nippon Steel Corp., Adv. Tech. Res. Labs. Ohtani Noboru, Nakabayashi Masashi, Katsuno Masakazu, Fujimoto Tatsuo, Tsuge Hiroshi, Aigo Takashi, Yashiro Hirokatsu, Hirano Hosei, Hoshino Taizo |
| 41.1 Development
of core optical devices for photonic networking and their application to
an optical label switching node prototype |
| September 5 13:15〜17:30 |
| 5p-B- / 0 |
| | 1 | Introductory talk: overview of the photonic network technology development project | The Univ. of Tokyo1 *Yoshiaki Nakano1 |
| | 2 | Electro-optic Beam-deflection Optical Switch | Fujitsu Limited 1 Aoki Shigenori 1, Sugama Akio 1, Kai Yutaka 1, Onaka Hiroshi 1 |
| | 3 | 40Gbps Monolithic SOA-MZI All-Optical Wavelength Converters | Mitsubishi Electric Corp.1 *Yasunori Miyazaki1,Toshiharu Miyahara1,Kazuhisa Takagi1,Keisuke Matsumoto1,Satoshi Nishikawa1,Tatsuo Hatta1,Toshitaka Aoyagi1,Kuniaki Motoshima1 |
| | 4 | Development of ultra-samll athermal AWG | Hitachi Cable 1 H.Uetsuka 1, K.Maru 1,T.Chiba 1, H.Ishikawa 1, S.Kashimura 1, Y.Abe 1, T.Hasegawa 1 |
| | | Break 15:15〜15:30 | |
| | 5 | Wavelength Tunable Short-Cavity DBR Laser Array | Hitachi Ltd., Central Research Laboratory1, Yokohama R&D Labs.The Furukawa Electric Co.,Ltd.2, Optoelectronic Industry and Technology Development Association3 Hideo Arimoto1,3, Shinji Tsuji1,3, Akihiko Kasukawa2,3, Tatsuro Kurobe2,3 |
| | 6 | Development of ultra-compact 8-channels arrayed waveguide amplifier | Asahi Glass *Yuki Kondo 1 |
| | 7 | Optical Burst Switching Node Prototype Based on Electronic Processing of Optical Label | KDDI Labs. 1,The Univ. of Tokyo 2 *Kohsuke Nishimura 1,Abdullah Al Amin 2,Mitsuru Takenaka 2,Takuo Tanemura,Ryo Inohara 1,Masashi Usami 1,Yosiaki Nakano 2 |
| | 8 | Optical Label Processing with FBG Encoder/Decoder | Oki Electric Industry 1 Ushikubo Takashi 1,Tamai Hideaki 1,Sarashina Masahiro 1,Kutsuzawa Satoko 1 |
| Recent Progress
in Therehold Voltage Control of High-k /Metal Gate Stacks |
| September 5 13:00〜17:30 |
| 5p-ZQ- / 0 |
| | 1 | Introductory Talk: (Recent Status of Threshold Voltage Control of High-k Metal Gate Stacks) | Univ. of Tsukuba 1, Waseda Univ. 2 Kenji Shiraishi 1, Keisaku Yamada 2 |
| | 2 | Understanding of Process Dependent Interface Properties at Metal/High-k Gate Stacks | Osaka Univ. 1 *Watanabe Heiji 1, Kita Yuki 1, Yoshida Shiniti 1, Hosoi Takuji 1, Shimura Takayoshi 1 |
| | 3 | New Insights into Effective Work Functions at Metal/High-k Dielectric Interfaces | Hiroshima Univ. Seiichi Miyazaki |
| | 4 | Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning | Selete 1, Tokyo Electron 2, Samsung Electronics 3, Hitachi 4,NEC EL 5 *Y.Akasaka 1,2, G.Nakamura 1,2, O.Ogawa 1, M.B.Lee 1,3, T.Amiaka 1, T.Kasuya 1,4, F.Ootsuka 1, Y.Nara 1 and K.Nakamura 1,5 |
| | | Break 14:45〜15:00 | |
| | 5 | Mechanism of Threshold Voltage Shift in High-k Gate Stack CMOS | MIRAI-ASRC, AIST 1, MIRAI-ASET 2, The University of Tokyo 3 *Hiroyuki Ota 1, Kunihiko Iwamoto 2, Koji Akiyama 2, Toshihide Nabatame 2, Akira Toriumi 1, 3 |
| | 6 | Threshold-voltage control of MOSFET with Ni-FUSI/HfSiON gate stack | NEC *Takahashi Kensuke, Terashima Koichi, Miyamura Makoto, Manabe Kenzo, Saitoh Motofumi, Tatsumi Toru |
| | 7 | Control of effective work function at the interface between full-silicide/metal-gate and high-k gate insulators | Toshiba Corp. 1 *Koyama Masato 1,Suzuki Masamichi 1,Tsuchiya Yoshinori 1 |
| | 8 | Low Threshold Voltage and High Mobility Dual Metal Gate Stack using Gate Last Process | Sony Corporation K.Tai, T.Ando, S.Yamaguchi, T.Hirano, Y.Hagimoto, Y.Nagahama, J.Wang, Y.Tateshita, Y.Tagawa, H.Iwamoto |
| | 9 | Systematic study on methods of improving p-metal pinning on HfSiON by utilizing Ru gate electrodes | Selete 1, Univ. of Tsukuba 2, Osaka Univ. 3, Hiroshima Univ. 4, NIMS 5, Waseda Univ. 6 Kadoshima Masaru 1, Sugita Yoshihiro 1, Shiraishi Kenji 2, Watanabe Heiji 3, Ohta Akio 4, Miyazaki Seiichi 4, Nakajima Kiyomi 5, Chikyow Toyohiro 5, Yamada Keisaku 6, Aminaka Toshio 1, Kurosawa Etsuo 1, Matsuki Takeo 1, Aoyama Takayuki 1, Nara Yasuo 1, Ohji Yuzuru 1 |
| Optoelectronics
Frontier by Nitride Semiconductor -Ultimate Utilization of Nitride Semiconductor
Material Potential- |
| September 5 13:00〜17:35 |
| 5p-ZR- / 0 |
| | 1 | Optoelectronics Frontier by Nitride Semicondoctor-Ultimate Utilization of Nitride Semiconductor Material Potential- | Ritsumeikan Univ.1 *Yasushi Nanishi 1 |
| | 2 | Low Temperature Growth of InN and Related Materials by Pulsed Excitation Deposition | The University of Tokyo 1, Kanagawa Academy of Science and Technology *Fujioka Hiroshi 1,2, Ohta Jitsuo 1,2 |
| | 3 | HVPE growth of AlN, AlGaN and InN by controlling source molecules | Tokyo Univ. of A & T 1 *Koukitu Akinori 1, Kumagai Yoshinao 1, Murakami Hisashi 1 |
| | 4 | Present status and future prospects for the development of InN-based nanostructure photonic devices | Graduate School of Electrical and Electronics Engineering1, VBL2, and InN-project as a CREST program of JST, Chiba University3 *Akihiko Yoshikawa123, Yoshihiro Ishitani123, Songbek Che123, Xinqiang Wang3 |
| | 5 | Control and Characterization of Radiative / Nonradiative Recombination Processes in In-rich InGaN Nanostructures | Kyoto Univ. 1, Nichia Corp. 2 Yoichi Kawakami 1, Mitsuru Funato 1, Akio Kaneta 1, Masaya Ueda 1, Kazunobu Kojima 1, Yukio Narukawa 2, Takashi Mukai 2 |
| | | Break 15:20〜15:35 | |
| | 6 | Vacancy-type defects in group-III nitrides probed by positron annihilation | Graduate School of Pure & Appl. Sci., Univ. of Tsukuba 1, IMRAM, Tohoku Univ. 2 A. Uedono 1, S. F. Chichibu 2 |
| | 7 | Improvement of the Performance of UV Light Emitting Devices Based on Group III Nitrides | Meijo Univ., Dept. M. S. E. 1 Amano Hiroshi 1, Iwaya Motoaki 1, Kamiyama Satoshi 1, Akasaki Isamu 1 |
| | 8 | Development and future prospects of 230-350nm III-nitride deep-UV light-emitting diodes (LEDs) | RIKEN 1, Saitama Univ. 2, Matsushita Electric Works 3 *Hirayama Hideki 1, Yatabe Tohru 1,2, Noguchi Norimichi 1,2, Fujikawa Sachie 1, Takano Takayoshi 1,3, Kamata Norihiko 2, Kondo Yukihiro 3 |
| | 9 | Development of AlGaInN-based red to infrared optical device crystals | Sophia Univ. 1, CREST JST 2 Katsumi Kishino 1, 2, Akihiko Kikuchi 1, 2, Hiroto Sekiguchi 1, 2, Shunsuke Ishizawa 1, 2 and Junpei Kamimura 1 |
| Molecular-scale
devices from programmed self-assembly --by blending bottom-up and top-down
processes |
| September 5 13:00〜17:50 |
| 5p-C- / 0 |
| | 1 | Introductory talk: Molecular-scale devices by programmed self-assembly from blending of bottom-up and top-down processes. | ISIR, Osaka Univ. 1 Takuya Matsumoto 1,Tomoji Kawai 1 |
| | 2 | Emerging Hierarchy via Self-Organization | NEDO 1, AIST 2 Yamaguchi Tomohiko 1,2 |
| | 3 | Self-Organizing Semiconductor Circuits exploiting Artificial and Device-Intrinsic Noises | Hokkaido Univ. 1 *Tetsuya Asai 1 |
| | 4 | Molecule transport using self-organizing lipid bilayer on patterned surface | NTT Basic Research Laboratories *Kazuaki Furukawa |
| | 5 | Self-Assembly and Control of Molecular Rotors | Visionarts 1, Pennsylvania State Univ. 2, Queensland Univ. Tech. 3, Tokyo Metro. Univ. 4, Shangdong Univ. 5 Tomohide Takami 1,2, Tao Ye 2, Paul S. Weiss 2, Dennis P. Arnold 3, Ken-ichi Sugiura 4, Jianzhuang Jiang 5 |
| | | Break 15:05〜15:20 | |
| | 6 | High-resolution imaging and modification of nano-meter scale organic molecules on insulating substrates | KARC-NiCT Kobe 1,AdSM Hiroshima-Univ. 2 Shukichi Tanaka 1,Toshiya Kamikado 1, Hiroyuki Hasegawa 1, Akira Otomo 1, Hitoshi Suzuki 2 |
| | 7 | Surface Polymerization of Single-Molecular Wires | Shizuoka University 1, PRESTO JST 2 Sakaguchi Hiroshi 1 2 |
| | 8 | Fabrication of Nanogap Flat Electrodes and its Application to Organic Naodevices | Osaka Univ. 1, ICORP 2, JST-PREST 3, NIMS 4 *Yuji Kuwahara 1,2,Megumi Akai-Kasaya 1,3, Akira Saito 1,2, Junichi Takeya 1 and Masakazu Aono 4 |
| | 9 | Self-Organized Molecular Devices | ISIR Osaka Univ. 1, Grad. School of Eng. Osaka Univ. 2 *Taniguchi Masateru 1, Terao Jun 2, Kawai Tomoji 1 |
| | 10 | Selective Fabrication of Molecular Arrays on Electrodes and Their Electrochemical Properties | Chuo Univ1，Toyo Univ2, Masa-aki Haga1，Katsuaki Kobayashi1, Keiichi Terada1, Yasuo Wada2, Ken Tsutsui2，Takao Ishida3 |
| | 11 | Self-organization of organic molecules / inorganic nano structures for molecular electronics | Inst. Mol. Sci. *Takuji Ogawa 1, Hiroaki Ozawa 1, Masahiro Kawao 1, Takashi Yajima 1, Hirofumi Tanaka 1 |
| Soft-materials
for practical applications |
| September 5 13:00〜17:20 |
| 5p-H- / 0 |
| | 1 | Introductory talk: Soft-materials for practical applications | Tokyo TECH 1 *Nakajima Ken 1 |
| | 2 | Dye-sensitized solar cells as printable and ubiquitous devices | Toin Univ. Yokohama *Tsutomu Miyasaka |
| | 3 | Development of organic solar cells using conducting polymers | Nippon Oil Corp. 1, Univ. Tokyo 2 *Nishikitani Yoshinori 1, Kubo Takaya 1,2 |
| | 4 | Fundamental Study of Interpenetrating Interface of Donor and Acceptor and Its Application for Solar Cell | Osaka Univ. Fujii Akihiko, Shibata Takeshi, Kittichungchit Varutt, Watanabe Masahiko, Ozaki Masanori |
| | | Break 15:05〜15:20 | |
| | 5 | Development of Materials for Direct Methanol Fuel Cell | Hitachi, Ltd., Advanced Reserch Lab. 1,Hitachi, Ltd., Hitachi Reserch Lab. 2 Souma Kenichi 1.Suzuki Shuichi 2 |
| | 6 | Polymer electrolyte membranes for fuel cells: Challenges to new materials | Univ. Yamanashi 1 *Miyatake Kenji 1 |
| | 7 | Work Behavior of Conducting Polymer Actuators | Kyushu Inst. Tech. Kaneto Keiichi, Suematsu Hirotaka, Takashima Wataru |
| 45.1 Poly-Si
TF -Recent developments and future- |
| September 5 13:00〜18:00 |
| 5p-K- / 0 |
| | 1 | Poly-Si TFT Recent developments and Future | Osaka Univ. JWRI *Serikawa Tadashi |
| | 2 | Solution-processed silicon films and transistors | Seiko Epson Corp. *Hideki Tanaka, Masahiro Furusawa |
| | 3 | Position-Controlled Large Single-Grain Silicon Arrays | Advanced LCD Technologies Development Center Co., Ltd. 1 Azuma Kazufumi 1 |
| | 4 | Design and fabrication of thin Si film for poly-Si TFT | University of Hyogo 1, Yamaguchi University 2 *Matsuo Naoto 1, Heya Akira 1, Kawamoto Naoya 2 |
| | 5 | Polycrystalline Si Thin Film Transistor – A New Crystallization Technique (Thermal Plasma Jet Irradiation) – | Hiroshima Univ. *Higashi Seiichiro 1 |
| | | Break 15:10〜15:20 | |
| | 6 | Solid Phase Crystallization of Si Thin Film Induced by Inkjet-Printed Metal Nano-particles | Kyushu Univ. 1 *Asano Tanemasa 1, Ishida Yuji 1 |
| | 7 | Gate SiO2 Film in Poly-SiTFT | Osaka Univ. JWRI 1 *Serikawa Tadashi 1 |
| | 8 | Low Temperature Poly-Si Thin Film Transistor using Bio Nano Process | NAIST 1, Panasonic 2 *Uraoka Yukiharu 1, Fuyuki Takashi 1, Yoshii Shigeo 2, Yamashita Ichiro 1,2 |
| | 9 | TFT transfer process for extremely thin SOG-TFT LCDs | TRADIM 1, NEC Corporation 2, NEC LCD Technologies, Ltd. 3 *Takechi Kazushige 1, Otsuki Shigeyoshi 1, Kaneko Setsuo 2,3 |
| | 10 | Poly-Si TFT on plastic using ultra-low temperature process | Univ. of the Ryukyus Takashi NOGUCHI |
| | 11 | | |
| Various
phenomena under electromagnetic fields and their control |
| September 5 13:10〜17:30 |
| 5p-N- / 0 |
| | 1 | Introductory Talk ; Application of a Magnetic Field to Metallurgy | Nagoya University Iwai Kazuhiko 1 |
| | 2 | Formation of Highly-Aligned Polycrystals in Diffusion-Conrolled Solid-State Phase Transition | Osaka Univ. 1 Masato YOSHIYA 1, Toshiyuki SHIKATANI 1, Hideyuki YASUDA 1 |
| | 3 | Effects of a magnetic field on formation of microstructure in metallic materials | National Institute for Materials Science Ohtsuka Hideyuki |
| | 4 | Impact of Magnetic Field on Metallurgical Phenomena related to Microstructure Development | Kumamoto Univ. Sadahiro Tsurekawa |
| | 5 | Effect of Intense Magnetic field on Electro-Deposition Processes | Kumamoto University *Kozuka Toshiyuki |
| | | Break 15:15〜15:30 | |
| | 6 | Interaction between Microwave and Materials, and Contribution of Microwave Magnetic Field to Heating | Graduate School of Environmental Studies, Tohoku Univ. Yoshikawa Noboru 1 |
| | 7 | Effect of external magnetic field on free-surface flows of liquid metal | Tokyo Metropolitan Univ. Tagawa Toshio |
| | 8 | Rising particle and bubble under strong vertical magnetic field | Tohoku Univ. 1 *Ueno Kazuyuki 1 |
| | 9 | Application of a Strong Magnetic Field on Metallurgical Processes | Nagoya Univ. *Iwai Kazuhiko 1, Usui Manabu 1, Toyoda Nozomu 1, Furuhashi Ippei 1 |
| The Present
Condition and Problems to Bring up Talented Persons for the Manufacturing
in the Transition Period |
| September 5 13:30〜17:00 |
| 5p-ZA- / 0 |
| | 1 | Introductory Talk | Miyagi Univ. of Education 1, Tokyo Univ. of Science 2, Tokyo Univ. of Technology 3 Yoshiaki Chiba1, Shizutoshi Ando2, Hiroshi Kezuka3 |
| | 2 | Actions of refreshing science education in classroom for nurturing human resources in the fields of science and engineering | Nagoya Univ. Yoshiaki Takai 1 |
| | 3 | Making a policy based on a teacher's activity | Azabu High School 1 Masuko Hiroshi |
| | 4 | Lectures of physics in National College of Technology and science seminar using a mobile laboratory | Miyagi National College of Technology Makoto Matsuura |
| | 5 | University science education in declining birthrate society | Iwaki Meisei University *Takashige Masaaki |
| | | Break 14:55〜15:10 | |
| | 6 | Education on manufacturing through voluntary project activities of undergraduate students | Chitose Inst. of Science & Technology 1 *Hasegawa Makoto 1 |
| | 7 | Practical engineer education at university based on research experience at a private company | Kinki Univ. 1 *Kuriyama Toshihide 1 |
| | 8 | | |
| | 9 |
Panel Discussion
|
|
| Current
Status and Future of Semiconductor Bulk Crystal Growth |
| September 6 13:00〜16:45 |
| 6p-ZL- / 0 |
| | 1 | Growth of ZnO・GaN Bulk Crystal by Solvothermal Method | IMRAM Tohoku Univ. 1, Fukuda Crystal Lab. 2, Tokyo Denpa 3, Japan Steel Works 4, Mitsubishi Chemical 5 *Fukuda Tsuguo 1, Yokoyama Chiaki 1, Yamane Hisanori 1, Orito Fumio 1, Kagamitani Yuji 1, Ehrentraut Dirk 1, Mikawa Yutaka 2, Maeda Katsumi 3, Ono Takao 3, Ishiguro Toru 4, Ito Hirohisa 5, Kawabata Shinichiro 5 |
| | 2 | Development of single-crystal diamond wafers | AIST 1 Chayahara Akiyoshi 1, Mokuno Yoshiaki 1, Yamada Hideaki 1, Tsubouchi Nobuteru 1 |
| | 3 | Current status and challenges of GaN and AlN growth by HVPE | Mie Univ. Kazumasa Hiramatsu 1, Yuhuai Liu 1, Hideto Miyake 1 |
| | | Break 14:45〜15:00 | |
| | 4 | Development of silicon crystal growth technology | Covalent Materials Corp. KASHIMA Kazuhiko |
| | 5 | Present and Future of GaAs and InP Bulk Crystal Growth Technologies | Sumitomo Electric Industries, Ltd. *Kawase Tomohiro 1, Inoue Tetsuya 1 |
| | 6 | Outlood and status of SiC bulk substrates | SiXON Ltd. *Furusho Tomoaki 1,Nishiguchi Taro 1,Sasaki Makoto 1,Yoshioka Yoshimitsu 1,Kobayashi Ryohei 1, Hayashi Toshihiko 1,Kinoshita Hiroyuki 1 |
| Improvement
of Luminescent Characteristics for Large-sized Displays and White LEDs Using
Phosphor Crystals |
| September 6 13:00〜17:00 |
| 6p-ZR- / 0 |
| | 1 | Introductory Talk: Improvement of Luminescent Characteristics for Large-sized Displays and White LEDs Using Phosphor Crystals. | NHK Tanaka Katsu |
| | 2 | Recent PDP Phosphors | KASEI OPTONIX LTD. 1 *Takashi Ichihara 1, Akihiro Ohto 1, Hideo Katayama 1, Takashi Kawaguchi 1, Takayuki Hisamune 1 |
| | 3 | High Luminous Dispersion-type Inorganic Electroluminescence Device using a High Brightness Phosphor | Frontier Core Technology Lab., Fuji Film Co. 1, Imaging Technology Div. Software R&D Center, Fuji Film Co. 2, Analysis Technology Center, Fuiji Film 3 *Tadanobu Sato 1, Masashi Shirata 1, Takafumi Noguchi 2, Koji Kawato 3, Kyohei Ogawa 3, Seiji Yamashita 1 |
| | 4 | Full Color Flat Panel Display using Inorganic Electroluminescent Technology | Sanyo Electric Co., Ltd. 1, iFire Tech. Ltd. 2, Dai Nippon Printing Co., Ltd. 3 *Hamada Hiroki 1, Wani Koichi 2, Kutsukake Masaki 3 |
| | | Break 14:45〜15:00 | |
| | 5 | Development and Applications of High Efficiency White LED | LED Engineering Div. LED Front-End Engineering Dept., Nichia Corporation Kinoshita Masayuki |
| | 6 | A White LED with high color rendition | Lighiting Company, Matsushita Electric Industrial Co., Ltd. *Oshio Shozo 1 |
| | 7 | Characteristics of Phosphors excited by high current density | Toshiba Corp. R&D Center 1,Toshiba Research Consulting Corp. 2 *Hiramatsu Ryosuke 1,Matsuda Naotoshi 1,Tamatani Masaaki 2 |
| | 8 | Fine-Pitch Field Emission Display Monitor and Required Phosphor Characteristics | Field Emission Technologies, Inc. Yoshimitsu Kato 1, Yukinobu Iguchi 1 |
| Recent
progress of silicon photonics technology |
| September 6 13:00〜17:15 |
| 6p-C- / 0 |
| | 1 | Introductory talkRecent progress and Impact of Silicon Photonics | Univ. of Tokyo Kazumi Wada 1 |
| | 2 | Expectations for Photonics Technology from the Computer System Side | NEC Corp. * Nakata Toshiyuki |
| | 3 | Silicon Photonics Devices for On-Chip Optical Interconnection | MIRAI-Selete 1, NEC 2 Kenichi Nishi 1,2, Keishi Ohashi 1,2 |
| | 4 | Light Emitting Devices in Silicon Photonics | Univ. Electro-Communications 1 *Kimura Tadamasa 1 |
| | | Break 15:00〜15:15 | |
| | 5 | Si nano-waveguide photonic devices | Yokohama National Univ. 1 *Baba Toshihiko1 |
| | 6 | Silicon photonics devices for telecommunications applications | NTT Microsystem Integration Labs. 1 *Yamada Koji 1, Tsuchizawa Tai 1, Watanabe Toshifumi 1, Fukuda Hiroshi 1, Shinojima Hiroyuki 1, Itabashi Sei-ichi 1 |
| ▲ | 7 | Ge photodetectors integrated with Si waveguides via selective epitaxial growth | Univ Tokyo 1, NTT 2 *Park Sungbong1, Ishikawa Yasuhiko1, Tsuchizawa Tai2, Watanabe Toshifumi2, Yamada Koji2, Itabashi Seiichi2, Wada Kazumi1 |
| | 8 | Silicon Light-Emitting Transistor | Hitachi Ltd. 1 Shin-ichi Saito 1 |
| Physical
properties evaluation of organic devices and new trends in organic FET （Fundumentals）
|
| September 6 13:00〜17:30 |
| 6p-D- / 0 |
| | 1 | Introductory talk: Physical properties evaluation of organic devices and new trends in organic FET | National Institute of Information and Communications Technology *Toshiki Yamada 1 |
| | 2 | Fundamental Properties of Organic Electronluminsecent Device and Its Charachterization. | Research Institute for Organic Electronics Atsushi Oda |
| | 3 | Impedance Spectroscopy in Organic Devices | Osaka Prefecture Univ. *Naito Hiroyoshi |
| | 4 | Electric field in organic-semiconductor devices studied by electroabsorption technique | Shimane Univ. 1 *Hiromitsu Ichiro 1, Tanaka Senku 1, Yoshida Yuki 1 |
| | 5 | Infrared and Raman spectroscopy of organic electronic devices | Waseda Univ 1 *Furukawa Yukio 1 |
| | | Break 15:10〜15:30 | |
| | 6 | Analysis of Organic Field Effect Transistors as a Maxwell-Wagner Effect Element by SHG | Tokyo Tech 1 Iwamoto Mitsumasa 1, Manaka Takaaki 1, Lim Eunju 1, Tamura Ryousuke 1 |
| | 7 | Simultaneous Measurements of Displacement Current and Channel Current in Organic Field Effect Transistors | Tokyo Inst. of Tech. *Yutaka Majima 1 |
| | 8 | Characterization of organic field-effect devices by ESR | Univ. of Tsukuba *Kazuhiro Marumoto |
| | 9 | Carrier transport in Organic TFTs: What Obtained from Potential Distribution under Device Operation | Chiba Univ.. *Nakamura Masakazu |
| Radiation
effects on advanced LSIs |
| September 6 13:00〜17:30 |
| 6p-ZE- / 0 |
| | 1 | Radiation induced Si errors | Institute of Space and Astronautical Science *Kazuyuki Hirose1 |
| | 2 | Real-time soft error tests for terrestrial cosmic-ray neutrons | Sony *Hajime Kobayashi 1, Ken Shiraishi 1, Nobutaka Kawamoto 1, Jun Kase 1 |
| | 3 | Classification Techniques of Multi-Cell Upsets and Retrieval of New Error Modes | Production Engineering Research Laboratory, Hitachi, Ltd. Eishi Ibe |
| | 4 | Neutron-Induced Soft Error Simulation | Fujitsu Laboratories Ltd. Yoshiharu Tosaka 1, Uemura, Taiki 1, Satoh Shigeo 1 |
| | 5 | Device-level investigation of single event transient, a new soft-error mode of logic VLSIs | ISAS 1, Sokendai 2, U. Tokyo 3, MHI 4 *Kobayashi Daisuke 1,2, Yanagawa Yoshimitsu 3, Makino Takahiro 2, Aimi Masahiro 3, Fukuda Seisuke 1,3, Ikeda Hirokazu 1,2, Saito Hirobumi 1,3, Hirose Kazuyuki 1,2, Ishii Shigeru 4, Takahashi Daisuke 4, Kusano Masaki 4, Ikebuchi Hiroshi 4, Kuroda Yoshikatsu 4 |
| | | Break 15:10〜15:30 | |
| | 6 | Radiation induced hard errors in MOS devices | Japan Aerospace Exploration Agency Kuboyama Satoshi |
| | 7 | Total Ionizing Dose and Displacement Damage Dose | Quantum Beam Science Directorate Hirao Toshio |
| | 8 | Hard errors of MOS devices and their atomistic origins | Musashi Institute of Technology 1, Advanced Research Laboratory, Hitachi Ltd. 2 *Takuya Maruizumi 1, Jiro Ushio 2, Yasuhiro Shiraki 1 |
| | 9 | Suppression of radiation induced hard error in MOS devices | Nihon Univ. Takahashi Yoshihiro 1 |
| Quantum
effects and related phenomena in nano-spintronics |
| September 6 13:25〜17:45 |
| 6p-S- / 0 |
| | 1 | | |
| | 2 | Coherent Spin-Dependent Tunneling and Oscillatory TMR Effect in MgO-based Magnetic Tunnel Junctions | AIST 1, Osaka Univ. 2 *Yuasa Shinji 1, Matsumoto Rie 1,2, Fukushima Akio 1, Nagahama Taro 1, Kubota Hitoshi 1, Yakushiji Kay 1, Suzuki Yoshishige 1,2, Ando Koji 1 |
| | 3 | Magnetic properties of Heusler alloys and magneto-resistance effect in the tunnel junctions using Heusler alloy electrodes | Tohoku Univ. 1, Tohoku Univ. IMR 2, AIST 3, Tohoku Univ. Niche 4 *Oogane Mikihiko 1, Sakuraba Yuya 2, Yilgin Resul 1, Hattori Masashi 1, Murakami Syuichi 1, Kubota Hitoshi 3, Ando Yasuo 1, Takanashi Koki 2, Miyazaki Terunobu 4 |
| | 4 | Possible magnetoconductive devices based on Co-doped TiO2 | Tohoku Univ. 1, JST-CREST 2 *Fukumura Tomoteru 1, Toyosaki Hidemi 1, Ueno Kazunori 1, Nakano Masaki 1, Yamasaki Takashi 1, Kawasaki Masashi 1,2 |
| | 5 | Tunneling magnetoresistance and resonant tunneling effect in III-V-based ferromagnetic semiconductor heterostructures | The Univ. of Tokyo 1, PRESTO JST 2 *Shinobu Ohya 1,2, Pham Nam Hai 1, Yosuke Mizuno 1, Masaaki Tanaka 1 |
| | | Break 15:30〜15:45 | |
| | 6 | Dry process fabrication and Magnetoresistance measurements of NiFe nanocontacts | Corp.R&D center, Toshiba corp. Ohsawa Yuichi 1 |
| | 7 | Spin-filtering effect at quantum point contacts | Keio Univ. 1 Eto Mikio 1 |
| | 8 | Spin transport in a single InAs quantum dot with ferromagnetic electrodes | IIS, Univ.Tokyo 1, CINQIE, Univ.Tokyo 2 Hamaya Kohei 1, Machida Tomoki 1,2 |
| | 9 | Quantum media conversion between a photon and a spin | RIEC-Tohoku Univ. Hideo Kosaka 1 |
| Challenges
for the future application in random-structured materials and their devices
|
| September 7 9:00〜12:25 |
| 7a-K- / 0 |
| | 1 | Challenges for the future application in random-structured materials and their devices | Tohoku Univ. 1 Fujiwara Takumi 1 |
| | 2 | Silica-based waveguide devices for Photonic Network | NTT Photonics Labs. Abe Makoto |
| | 3 | Fabrication of Next Generation Passive Optical Components | AIST Junji Nishii |
| | | Break 10:25〜10:40 | |
| | 4 | Photon Localization in Morphology-Controlled Metal Oxides | Kyoto Univ. 1, JST-PRESTO 2 *Koji Fujita 1,2 |
| | 5 | Flexible Organic Electronic-Optical Integrated Devices | Osaka Univ. 1 Ohmori Yutaka 1 |
| | 6 | Randomness of Amorphous States in Phase-Change Memory | Hitachi Terao Motoyasu 1 |
| Expanding
applications of functional high-density fluids processing |
| September 7 10:15〜16:05 |
| 7a-ZF- / 0 |
| | 1 | Introduction: Processing using functional high-density fluids | Univ. Yamanashi 1 *Eiichi Kondoh |
| | 2 | Formation of Pt nano-particles on Carbon nano structures using supercritical CVD and its application to devices | Nagoya Univ. 1, Meijo Univ. 2 *Hori Masaru 1, Hiramatsu Mineo 2 |
| | 3 | Toward highly conformal thin film deposition using supercritical CO2 | AIST NeRI Shimizu Takashi |
| | 4 | Supercritical fluid plasma and its applicaion to nanotechnology | Univ of Tokyo, Graduate School of Frontier Science 1 Terashima Kazuo 1, Tomai Takaai 1 |
| | 5 | The Growth of ZnO Bulk Single Crystal in the Super-Critical State | Tokyo Denpa Co.,Ltd 1 Shigeaki Sugimura 1, Takao Suzuki 1, Hayato Sasaki 1, Katsumi Maeda 1, Sadao Okado 1 and Takao Ono 1 |
| | | Lunch 12:30〜13:30 | |
| 7p-ZF- / 0 |
| | 1 | Applications of a super critical system in MEMS Devices | OMRON Corporation, Advanced Device Laboratory Moriguchi Makoto,Miyaji Takaaki |
| | 2 | Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication | Sony Corporation *Saga Koichiro 1 |
| | 3 | Treatments of semiconductor surfaces using supercritical water and functional water. | Osaka Univ. 1, ORGANO Corp. 2 ○Hidemitsu Aoki 1, Naoyoshi Komatsu 1, Taro Oe 2, Takashi Futatsuki 2, Chiharu Kimura 1 and Takashi Sugino 1 |
| | 4 | Cleaning Processing of VLSI Devices by Functional Waters | Toshiba Corp. *Masako Kodera |
| | 5 | Fabrication of Uniform, Thin Metal Film without Pinhole by Supercritical Nanoplating | Tokyo Inst. Tech. 1 *Masato Sone 1 |
| | 6 | | |
| Recent
Advances in Thin-Film Silicon Solar Cells |
| September 7 13:00〜16:25 |
| 7p-ZV- / 0 |
| | 1 | Introduction Story: Recent Progress in Thin-Film Silicon Solar Cells | Osaka Univ. 1 *Toyama Toshihiko 1 |
| | 2 | | |
| | 3 | The present status on the development of our thin-film silicon solar cells | Thin Film Solar Business Center Yoshiyuki Nasuno, Katsufumi Kishimoto, Masafumi Kondo, Yuusuke Fukuoka, Takashi Hayakawa, Katsuhiko Nomoto |
| | 4 | Challenge and new techniques of TCO substrate for thin-film Si solar cells | Asahi Glass Co., Ltd. Research Center Takuji Oyama, Naoki Taneda, Mika Kambe，Kazuo Sato |
| | | Break 14:40〜14:55 | |
| | 5 | amorphous silicon photovoltaic cell | Fuji electric Ishikawa takamasa 1, Sakai ryouhei 1, Kawano shinichi 1, Shimosawa makoto 1, Nakamura tetsuro 1, Takano akihiro 1, Kamoshita tomoyoshi 1, Miyagi masahide 1, Saito jyunichiro 1 |
| | 6 | Thin Film Silicon Solar cell Technology | Sanyo Electric Co. Ltd. Advanced Energy Research Center Akira Terakawa |
| | 7 | New technologies and future prospects for silicon thin film solar cells with high efficiency | AIST 1 *Hiroyuki Fujiwara 1, Takuya Matsui 1, Arno Smets 1, Takashi Koida 1, Atsushi Masuda 1, Michio Kondo 1 |
| Physical
properties evaluation of organic devices and new trends in organic FET （Applications）
|
| September 7 13:00〜17:15 |
| 7p-ZR- / 0 |
| | 1 | Introduction: Current Technology and Future Prospect of Organic Thin Film Transistors | Chiba Univ. Kazuhiro Kudo |
| | 2 | Current injection process from metallic contact to organic channel | Riken 1, Tokyo Tech. 2,JST-CREST 3 ○K. Tsukagoshi 13 ,T. Minari 13, T. Miyadera 13, Sui-Dong Wang 13, Y. Aoyagi 123 |
| | 3 | High-mobility Organic Single-Crystal Transistors | Osaka Univ. *Takeya J. 1 |
| | 4 | Development of Novel n-Type Organic FETs Based on Heterocyclic Compounds | Interdisciplinary Grad. School of Sci. and Eng., Tokyo Inst. Technology Yamashita Yoshiro 1 |
| | | Break 15:00〜15:15 | |
| | 5 | New molecular-based organic semiconductors for OFET application | Hiroshima Univ. *Takimiya Kazuo |
| | 6 | Organic TFT-driven active-matrix flexible displays | Sony Corp. Materials Labs. 1 Nomoto Kazumasa 1 |
| | 7 | Development of Oeganic TFT Backplane for Electric Paper Display | Dai Nippon Printing Co.,Ltd Research & Development Center *Tsuruoka Yoshiaki |
| | 8 | Lowering of operation voltage in organic TFT | NHK Science & Technical Research Laboratories Tokito Shizuo |
| Industrial
Development and Application of Biochips |
| September 7 13:30〜17:20 |
| 7p-D- / 0 |
| | 1 | Introduction Talk: Industrial Development and Application of Biochips | Toray Industries, Inc. 1 *Nakamura Fumio 1 |
| | 2 | Personalized Medicine by Genomic Technology | Kyoto Univ., Pharm. Sci., GDDS Tsujimoto Gozoh 1 |
| | 3 | DNA microarray fabrication using Ink-jet technology for clinical use | Canon Inc. 1 Yamamoto Nobuko 1 |
| | 4 | Development of Localized Surface Plasmon Resonance Biosensor Fabricated by Nanoimprinting Technology | OMRON Corp. R&D h. q. 1, JST (CREST) 2 *Matsushita Tomohiko 1 2, Nishikawa Takeo 1 2, Yamashita Hideyuki 1 2, Hasui Ryosuke 1 2, Fujita Satoshi 1 2, Masuda Rie 1 2, Okuno Yutaro 1 2 |
| | | Break 15:30〜15:45 | |
| | 5 | Detection of biomolecular recognition using bio-transistor | National Inst. of Materials Sci.1, Univ. of Tokyo2 *Miyahara Yuji1,2, Sakata Toshiya2 |
| | 6 | Development of drug development screening system by using surface plasmon resonance sensor technology | Fujifilm Life Science Products Div. 1,Fujifilm Frontier Core-Tech. Labs. 2 *Kuruma Koji 1,Ezoe Toshihide 1,Yamashita Seiji 1,Ohtsuka Hisashi 2 |
| | 7 | Development and application of Si-based ion channel biosensor | Inst. Molecular Sci. 1, SOKENDAI 2 *Urisu Tsuneo 1,2 |
| | 8 | Closing Remark | Tohoku Univ. 1 *Yoshinobu Tatsuo 1 |
| Simulation
of Plasmas and their Applied Process - Present Situation and Future Breakthrough
- |
| September 7 13:45〜17:25 |
| 7p-ZQ- / 0 |
| | 2 | Introductory talk: Simulation of Plasmas and their Applied Process – Present Situation and Future Breakthrough - | National Defense Academy 1 *Haruaki Akashi 1 |
| | 3 | Current Status of the Numerical Simulation of Plasma Processing | Kyoto Univ. 1 Ono Kouichi 1 |
| | 4 | Simulation of Atmospheric Pressure Glow Discharge Plasma | Konica Minolta Technol. Center *Eiichi Suetomi 1 |
| | 5 | | |
| | 6 | Current Status and Future Vision for the Simulation of Feature Profile Evolution during Plasma Etching of Si | Hitachi Central Research Lab. 1,Kyoto Univ. 2 *Mori Masahito 1,Irie Shouki 2,Itabashi Naoshi 1,Eriguchi Kouji 2,Ono Kouichi 2 |
| | 7 | Process plasma simulator | PEGASUS Software 1 *Tanaka Masaaki 1,Matsunaga Fumihiko 1,Nakadate Hiroshi 1 |
| | | Break 15:55〜16:10 | |
| | 8 | Simulation of RF discharge plasmas in CH4/H2 for carbon nanotube growth – Effect of gas flow-rate – | Nagoya Inst. Technol. 1, Hokkaido Univ. 2 *Oda Akinori 1, Okita Atsushi 2, Suda Yoshiyuki 2 |
| | 9 | | |
| | 10 | Plasma Process Design, its present situation and future prospects | Keio Univ. 1 *Makabe Toshiaki 1 |