Electrical characteristics of multi-level switching memory with a metal-oxide stack structure by atomic layer deposition
Atomic layer deposition has a unique technique because of several advantages such as low temperature deposition at room temperature, deposition cycle control with a 0.1nm order of magnitude, and conformal film deposition on a ball and hole with a high aspect ratio. We present differences between the resistive switching characteristics of Pt-electrode capacitors with Al2O3/TiO2 and TiO2/Al2O3 bilayer structures, fabricated by ALD and post-deposition annealing at 200°C. The multi-level switching characteristics were importantly obtained in Pt/ TiO2/Al2O3/Pt capacitors by changing the appliedvoltage.
- 1 National Institute for Materials Science