OYO BUTURI
Vol.86
No.12
2017
12
20171286121040
OYO BUTURI Vol.86 No.12 (2017)
Comprehensive Research Report

Perspective on the present research on native point-defects in semiconductors: A point-defect dilemma?

Ichiro YONENAGA1

For semiconductors, numerous research studies on intrinsic point defects have been performed as a long-term issue because of their crucial influence on device functionality and degradation. Currently, there are puzzling variations between the reported values of formation and diffusivity of vacancies and self-interstitials even in Si. After an explanation of the atomic and electronic structures of point-defects, a comprehensive review of what has been studied experimentally and theoretically on the formation energies and entropies of vacancies and self-interstitials and some influences of impurities and pressure on them in Si is given. Then, point-defect studies in Ge and widegap semiconductors are briefly mentioned.

  • 1 Tohoku University (Professor emeritus)
OYO BUTURI Vol.86 No.12 p.1040 (2017)