OYO BUTURI
Vol.86
No.11
2017
11
2017118611956
OYO BUTURI Vol.86 No.11 (2017)
Our Research

New paradigm for power electronics created by IGBT scaling

Toshiro HIRAMOTO1, Ichiro OMURA2

IGBT (Insulated Gate Bipolar Transistor) scaling improves device performance and reduces the gate drive voltage, resulting in an integration with advanced CMOS VLSI. Based on the concept of IGBT scaling, our target is to establish a new paradigm for power electronics, where automatic optimization is realized for power device control by using the IoT (Internet of Things) and AI (Artificial Intelligence). In this article, the research background, the basic concepts, and a portion of the research achievements are described.

  • 1 Institute of Industrial Science, The University of Tokyo
  • 2 Kyushu Institute of Technology, Graduate School of Life Science and Systems Engineering
OYO BUTURI Vol.86 No.11 p.956 (2017)