OYO BUTURI
Vol.86
No.9
2017
9
20179869796
OYO BUTURI Vol.86 No.9 (2017)
Our Research

Room-temperature atomic layer deposition and its application

Fumihiko HIROSE1

Room-temperature atomic layer deposition is explained in this paper. To confirm the rate-limiting process of thermal ALD at RT, we investigate the surface reactions of the precursor adsorption and its oxidization by an in-situ observation method. Most metal organic precursors require OH sites to adsorb on the oxide surface. We applied plasma excited humidified Ar to thermal ALD to achieve the RT-ALD. This process allows for the conformal deposition of the oxide film on a complicated surface. In this paper, we describe its application to anti-corrosion, PET and gas barrier coatings.

  • 1 Graduate school of science and engineering, Yamagata University
OYO BUTURI Vol.86 No.9 p.796 (2017)