Room-temperature atomic layer deposition and its application
Room-temperature atomic layer deposition is explained in this paper. To confirm the rate-limiting process of thermal ALD at RT, we investigate the surface reactions of the precursor adsorption and its oxidization by an in-situ observation method. Most metal organic precursors require OH sites to adsorb on the oxide surface. We applied plasma excited humidified Ar to thermal ALD to achieve the RT-ALD. This process allows for the conformal deposition of the oxide film on a complicated surface. In this paper, we describe its application to anti-corrosion, PET and gas barrier coatings.
- 1 Graduate school of science and engineering, Yamagata University