Fabrication of single-crystalline silicon MOSFETs on plastic: For the integration of hetero devices
Seiichiro HIGASHI1, Kohei SAKAIKE2
We have developed a technique for forming single-crystalline silicon on a plastic (PET) substrate by transferring silicon on insulator (SOI) layer, using the meniscus force of water. The transfer of an SOI layer was achieved by creating a hollow structure supported by SiO2 pillars, adhering it to a PET substrate with purified water, and heating it at 90°C. The (100) single-crystalline silicon layer on the PET had an adhesiveness that can endure device processing due to the low-temperature annealing. A 130°C process was performed to form nMOS and pMOS transistors, enabling high field-effect mobility of 609 and 103 cm2V-1s-1, respectively. Thermal oxidation of silicon in a hollow condition results in less variation in the characteristics, and a functioning nMOS inverter on a PET substrate was achieved.
- 1 Graduate School of Advanced Sciences of Matter, Hiroshima University
- 2 National Institute of Technology, Hiroshima College