Improvements in SiC MOSFET characteristics by the incorporation of foreign atoms
Dai OKAMOTO1, Hiroshi YANO1
Power electronics has recently attracted much attention as a technology to reduce electricity consumption. As a next-generation power semiconductor device, SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) have been commercialized and gradually put into practical use. However, the channel mobility of SiC MOSFETs fabricated by standard dry oxidation is extremely low due to the high density of the interface states at the SiO2/SiC interface, thus hindering the development of SiC power MOSFETs. In this article, we review our recent study on gate oxide formation processes to enhance the field-effect mobility by incorporating impurities such as phosphorus or boron atoms into the SiO2/SiC structures.
- 1 University of Tsukuba, Faculty of Pure and Applied Sciences, Division of Applied Physics