最近のデバイスの急激な微細化，高性能化，高信頼度化により，不良解析に用いられる物理的，化学的分析技術にはきわめて高度な空間分解能，感度などが求められている．本稿では，この要求にこたえるために開発中の微小部化学反応解析用のエネルギーフィルタリング電子顕微鏡，微小部超高感度元素分析用のスパッタ中性粒子質量分析計，実回路電気特性評価用のナノプローバー，結晶または形状の三次元観察用電子顕微鏡などの新分析装置および，それらを用いての，耐熱コンタクト高抵抗不良は化学反応起因，SRAM書き込み不良はゲート絶縁膜膜厚不均一起因などの解析事例を紹介する．
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Analytical instruments based on new concepts for failure analyses of devices of 100 nm dimensions or less have been developed. They are a sputtered neutral mass spectrometer with focused ion beam for highly sensitive element analysis in microscale regions (1018 atoms/cm3 in 30 nmφarea), a transmission electron microscope (TEM) with an electron energy loss spectrometer for chemical bond analysis in regions less than 2 nmφ area, an extremely small probing system (Nanoprober) for electrical characteristics inspection in actual circuits, and a glow discharge optical emission spectrometer for rapid and precise composition analysis. Using these instruments, it was found that the formation of SiO2 or TiOx film by water from titanic acid (TiOxH2O) is the cause of the high resistivity in a contact (CVD−W/CVD−TiN/Ti/Si) connecting metal and Si substrate.