OYO BUTURI, Vol.64, No.11 (1995)

Preface
- Chihiro HAMAGUCHI
Reviews
- Limitation in downsizing of silicon devices and their performance
  Hiroshi IWAI and Hisayo Sasaki MOMOSE
- Control of SiO2/Si interface formation on atomic scale
  Takeo HATTORI
- Phosphorus-vacancy pair diffusion model for phosphorus diffusion in silicon
  Masayuki YOSHIDA
- Epitaxial orientation of high-Tc superconducting thin film growth
  Shintaro MIYAZAWA and Masashi MUKAIDA
- Trends in research and development of SOI technology
  Yasuo INOUE and Yasuo YAMAGUCHI
- Current status and future prospects of X-ray lithography
  Yoshio YAMASHITA
- Plasma-etch-induced damage and its reduction in ultralarge-scale integration
  Kazuo NOJIRI and Tatsumi MIZUTANI
- Ion-irradiation-induced defects in semiconductors and their dynamic behavior
  - Application to semiconductor processing -
  Toshio TSURUSHIMA
- Oxide epitaxy by laser MBE
  - the state of the art
  Masashi KAWASAKI, Kazuhiro TAKAHASHI and Hidemi KOINUMA
- Effect of absorbed hydrogen on low-temperature epitaxial growth in ultra-high-vacuum chemical-vapor-deposition
  Toru TATSUMI, Akira SAKAI and Keiko MIYANAGA
- Creation of structurally metastable iron-boron pairs in silicon using recombination-enhanced migration of iron
  Hiroshi NAKASHIMA
- Liquid phase epitaxy growth of high-Tc superconducting film
  Tasuku KITAMURA and Izumi HIRABAYASHI
- An introduction to the Internet (2)
  Masao KITANO
Experimental Techniques
- Advanced process technology for ULSI devices -
- Lithography
  Shinji OKAZAKI
- Plasma etching technology
  Keiji HORIOKA, Hisataka HAYASHI, Kazuaki KURIHARA and Makoto SEKINE
- Interconnect thin film deposition
  Takamaru KIKKAWA