OYO BUTURI, Vol.64, No.7 (1995)

Preface
- Shin-ichi AKAI
Reviews
- Bulk single-crystal growth of wide-band-gap semiconductor silicon carbide
  Masatoshi KANAYA, Noboru OHTANI, Jun TAKAHASHI, Takeshi NISHIKAWA and Masakazu KATSUNO
- Fundamental limits to control of semiconductor quantum microstructures
  Kazumi WADA
- Photonic integrated devices fabricated by selective-area metalorganic vapor phase epitaxy
  Masahiro AOKI
- Atomically controlled growth and etching of phosphide compound semiconductors by gas source molecular beam epitaxy
  Hajime ASAHI
- Quantum well intersubband transition lasers
  Masaya NOTOMI, Hiromitsu ASAI and Yuzo YOSHIKUNI
- Elastic anomalies in single-crystal metallic superlattices
  Kiyoshi KAKAUE, Hikaru TERAUCHI and Akira YOSHIHARA
- Continuous casting of multicrystalline silicon ingot by electromagnetic casting
  Kyojiro KANEKO
- A new era conputer product focused on environmentally relevant factors
  Jun FUJIMOTO
- Step-controlled epitaxy in semiconductor SiC polytypes
  Tsunenobu KIMOTO and Hiroyuki MATSUNAMI
- Formation of organic-inorganic hetero nanosystems
  Jun TAKADA
- SOI structures and application to a high-temperature-operated pressure sensor
  Makoto ISHIDA and Young-Tae LEE
- Characterization of electronic properties of III-V compound semiconductors using photo-modulation ellipsometry
  Tadashi SAITOH and Yi-Ming XIONG
- An introduction to the Internet (1)
  Masao KITANO
Experimental Techniques
- Impurity doping in wide bandgap semiconductors -
- Heavy doping - theory and present status -
  Jun-ichi SHIRAKASHI and Makoto KONAGAI
- Nitrogen radical doping
  Kazuhiro OHKAWA
- Metalorganic vapor phase epitaxy
  Shuji NAKAMURA
- High temperature ion implantation
  Takeshi MIYAJIMA, Norihito TOKURA, Kunihiko HARA and Hiroo FUMA