| 13 Science and Technology of Crystals |
| 13.1
Bulk Crystal Growth |
| Mar. 23 13:30`18:30 |
| 23p-ZD-@/ I |
| |
1 |
Growth and characterization of Sc2O3
crystal grown by micro-pulling-down method |
IMRAM, Tohoku Univ. 1, General Physhics Insit.,
RAS 2, LPCML, Claude Bernard Lyon 1 Univ. 3@*Rayko Simura 1, Mun Ji-Hun
1, Anis Jouini 1, Vladimir V. Kochurkin 2, Akira Yoshikawa 1, Georges Boulon
3, Tuguo Fukuda 1 |
| |
2 |
Growth and Scintillation Properties of Pr doped
Aluminum Gallium Garnet Crystals |
IMRAM Tohoku Univ., Inst. Physics AS CR@Ogino Hiraku
1, Yoshikawa Akira 1, Nikl Martin 2, Fukuda Tsuguo 1 |
| £ |
3 |
Growth and optical properties of undoped, Ti and
Mn-doped MgAl2O4 spinel single crystals grown by the
micro-pulling-down method for laser application |
IMRAM Tohoku Univ. 1, Lyon1 Univ. 2@JOUINI Anis
1, YOSHIKAWA Akira 1, SATO Hiroki 1, FUKUDA Tsuguo 1, BOULON Georges 2 |
| £ |
4 |
Crystal growth, thermal and optical properties
of Yb-doped Gd3Ga5O12 |
IMRAM, Tohoku Univ., MSE, Ibaraki Univ., LPCLM,
Claude Bernard Lyon1 Univ.@*Andrey Novoselov, Yuji Kagamitani 1, Hiromich
Ohta 2, Hiroyuki Shibata 1, Akira Yoshikawa 1, Georges Boulon 3, Tsuguo
Fukuda 1 |
| |
5 |
Crystal growth, thermal conductivity and luminescence
properties of Tm:Y2O3 single crystals |
IMRAM, Tohoku Univ. 1, Ibaraki univ. 2, LPCML,
Lyon1 Univ. 3@*Ji Hun Mun 1, Anis Jouini 1, Andrey Novoselov 1, Akira Yoshikawa
1, Kazuma Handa 2, Hiromichi Ohta 2, Hiroyuki Shibata 1, Yoshio Waseda 1,
Georges Boulon 3 and Tsuguo Fukuda 1 |
| £ |
6 |
Growth and visible emission spectroscopy of Dy3+-doped
YLiF4 and LuLiF4 single crystals |
IMRAM, Tohoku Univ. 1, Università di Pisa
2@*Kyoung Jin Kim 1, Akira Yoshikawa 1, Alessandra Toncelli 2, Mauro Tonelli
2, Yoshio Waseda 1, Tsuguo Fukuda 1 |
| |
7 |
Laser properties of a promising near infrared tunable
laser material Yb3+-CaF2 single crystal grown by the
Czochralski method |
Tohoku Univ. IMRAM 1,Univ. Claude Bernard Lyon
1 2,Tokuyama Corp. 3@Jouini Anis 1,*Fukuda Kentaro 1,3,Brenier Alain 2,Sato
Hiroki 1,Yoshikawa Akira 1,Fukuda Tsuguo 1,Boulon Georges 2 |
| ’ |
8 |
Dependence of the Li concentration on electrical
current in LiNbO3 fiber crystals |
IMR Tohoku Univ.@*Azuma Yukinaga 1, Koh Shinji
1, Huang Xinming 1, Uda Satoshi 1 |
| |
9 |
Evaluation of intrinsic internal electric field
at the growth interface by using micro pulling down method |
IMR, Tohoku Univ. 1, Sakai Chemical Industry 2
@*Shinji Koh 1, Masahiro Nishida 2, Yukinaga Azuma 1, Yukihiro Kuniyoshi
2, Xinming Huang 1, Satoshi Uda 1 |
| |
|
Break 15:45`16:00 |
|
| |
10 |
In situ observation of crystal growth process of
YBCO superconductive oxide with imposing an external electric field |
IMR. Tohoku Univ.@Huang Xinming, Uda Satoshi |
| ’ |
11 |
Phase Relationship around Langatate (La3Ta0.5Ga5.5O14) |
IMR Tohoku Univ. 1@*Kimura Hiromitsu 1, Huang Xinming
1, Uda Satoshi 1 |
| |
12 |
Impurity Effects on Crystal Growth of Rutile |
Univ. of Yamanashi @*Satoshi Watauchi, Shinsuke
Morimoto, Jong Kwan Park, Isao Tanaka |
| ’ |
13 |
Fabrication and Characterization of Transparent
Conductive ΐ-Ga2O3 Single Crystal |
Nippon Light Metal Co.,Ltd. 1, NIMS 2, Tohoku Univ.
IMR 3@Suzuki Norihito 1, Ohira Shigeo 1, Tanaka Masahiko 2, Sugawara Takamasa
3, Nakajima Kazuo 3, Shishido Toetsu 3 |
| £ |
14 |
Conductivity control of ΐ-Ga2O3
substrates by Si doping |
NIMS 1, Koha Co.Ltd. 2, Waseda Univ. 3@Villora
E.G. 1, Shimamura Kiyoshi 1, Aoki Kazuo 2, Kitamura Kenji 1, Ichinose Noboru
3 |
| £ |
15 |
Dynamic analysis of carbon distribution in a silicon
ingot of a casting process with a global model of heat transfer |
Kyushu Univ. 1@*L.J. Liu 1, S. Nakano 1, K. Kakimoto
1 |
| |
16 |
Dynamic analysis of temperature distribution in
a multi-crystalline silicon of a casting method with multi heater system |
Kyushu Univ. 1@*S. Nakano 1, L.J. Liu 1. K. Kakimoto
1 |
| |
17 |
In situ observation of concentration profile in
the solution by X-Ray penetration method |
RIE Shizuoka Univ 1, Shizuoka Inst. Sci and Tech.2@@Takuya
Hikida 1, Shigeki Inuduka 1, Hisashi Morii 1, Tadanobu Koyama 1, Tetsuo
Ozawa 2, Touru Aoki 1, *Yasuhiro Hayakawa 1 |
| |
18 |
Crystal growth of InxGa1-xAs
by vertical gradient freeze method |
Hokkaido Inst. Tech. 1@*Karita Takashi 1, Suzuki
Kazuhiko 1, Imai Kazuaki 1 |
| |
19 |
Growth of homogeneous InX
Ga1-X
As(X=0.2,0.3) Single Crystals by the TLZ (Traveling Liquidus-Zone) Method |
Advanced Engineering Services Co., Ltd., 1,Japan
Aerospace Exploration Agency 2@*Tsuru Tetsuya 1,Miyata Hiroaki 1,Muramatsu
Yuji 1,Kinoshita Kyoichi 2,Ogata Yasuyuki 2,Adachi Satoshi 2,Yoda Shinichi
2 |
| 13.2
II-VI Crystals |
| Mar. 22 9:00`18:00 |
| 22a-ZH-@/ I |
| |
1 |
Crystal growth of ZnO single crystals by hydrothermal
method |
Tosoh Corp. 1,IMR of Tohoku Univ. 2@*Matsunaga
Takahiro 1,Shishido Touetsu 2,Nakajima Kazuo 2 |
| |
2 |
Growth and characterization of thick ZnO on sapphire
substrates.(II) |
Univ. of Yamanashi@Minegishi Kazunori 1, Tsutomu
Takahashi 1, Kouji Yano 1, *Kasuga Masanobu 1 |
| £ |
3 |
Fabrication and characterization of homoepitaxial
high-resistivity single-crystalline ZnO films |
IMRAM Tohoku Univ. 1, Murata Manufacturing 2, Mitsubishi
Gas Chemical 3, Palo Alto Research Center 4@Ehrentraut Dirk 1, Sato Hideto
2, Miyamoto Miyuki 3, Schmidt Oliver 4, Kiesel Peter 4, Fukuda Tsuguo 1 |
| |
4 |
Analysis of limiting process in ZnO crystal growth
by CVT method |
IMRAM Tohoku Univ. 1,Sumitomo Metal Mining Co.
Ltd. 2@*Mikami Makoto 1,Hong Sang Hwui 1,Sato Takashi 1,Wang Ji Feng 1,Masa
Yoshihiko 2,Isshiki Minoru 1 |
| |
5 |
Oblique incidence hetero-reststrahl reflection
in ZnO thin films grown on a-Sapphire
|
Kumamoto Univ. 1, AIST 2@*Kumagai Yuji 1, Saiki
Kazuya 1, Yokoi Hiroyuki 1, Kuroda Noritaka 1,
Tampo Hitoshi 2, Shibata Hajime 2, Niki Shigeru 2 |
| |
|
Break 10:15`10:30 |
|
| ’ |
6 |
Dependence on growth temperature of Zn1-xCdxO
films by remote plasma enhanced MOCVD |
Res. Inst. of Electronics, Shizuoka Univ@*Ohashi
Toshiya 1,Ishihara junji 1,Nakamura Atsushi 1,Aoki Toru 1,Temmyo jiro 1 |
| |
7 |
Fabrication of ZnO films using a spin coating technique
for the application to light-emitting devices |
Kogakuin Univ. 1@*Yoshioka Kaori 1, Egawa Shinichi
1, Kobayashi Toshiaki 1, Baba Taichi 1, Honda Tohru 1, Kawanishi Hideo 1 |
| |
8 |
Preparation of ZnO Nanowires by Atmospheric-pressure
Chemical Vapor Deposition Using ZnCl2-H2O and Zn-H2O
as Source Materials |
Ehime University 1@Yagishita Youhei 1, *Terasako
Tomoaki 1, Umeki Kousuke 1, Miyazaki Yuki 1, Miyata Akira 1, Shirakata Sho
1
|
| |
9 |
Epitaxial Growth of ZnTeO alloys on ZnTe Substrates |
Univ of Yamanashi@* Aoki Kazumasa 1,Gemma Kazuaki
2,Nabetani Yoichi 3,Kato Takamasa 4,Matsumoto Takashi 5, |
| |
10 |
Band-offset and Electrical Properties of ZnO/ZnTe
Hetero-Junction |
Akita Prefectural Univ.@*Yamada Minoru 1,Komiyama
Takao 1,Yamaguchi Hiroyuki 1,Aoyama Takashi 1 |
| |
11 |
Destruction Processes and Theoretical Design of
MgO Protecting Layer in Plasma Display |
Tohoku Univ. 1, JST-PRESTO 2, Univ. Tokyo 3, Tohoku
Univ. 4
@Momoji Kubo 1,2, Hiromi Kikuchi 1, Hideyuki Tsuboi 1, Michihisa Koyama
1, Akira Endou 1, Carlos A. Del Carpio 1, Hiroshi Kajiyama 1, Akira Miyamoto
1,4 |
| |
|
Lunch 12:00`13:00 |
|
| 22p-ZH-@/ I |
| |
1 |
Structure of ZnSe films on GaAs substrate grown
by molecular beam epitaxy
under illumination |
Graduate School of Science Osaka Univ. 1, Nanoscience
and Nanotechnology Osaka univ. 2@*Hirai Ryota 1, Ohno Yutaka 1, Takeda Seiji
1,Ichikawa Satoshi2 |
| |
2 |
Enhancement of photoluminescence intensity of ZnSe
by two-photon excitation |
Faculty of Engineering, Shizuoka Univ. 1@*Torizawa
Makoto 1, Kawata Yoshimasa 1 |
| |
3 |
Crystal guilty and annealing effect for the ZnSe
films on GaAs grown by Molecular Beam Epitaxy |
Hokkaido Inst. Of Tech.@*Ichinohe Yoshihiro 1,Shigaura
Gouichi 1,Ohashi Masahiro 1,Imai Kazuaki 1,Sawada takayuki 1,Suzuki Kazuhiko
1,Kimura Nobuyuki 1,Kimura Naohito 1 |
| |
4 |
Behaviors of group Va elements in ZnSe |
Institute of Multidisciplinary Research for Advanced
Materials, Tohoku University@*J.F. Wang, C. B. Oh, M. Isshiki |
| |
5 |
Molecular Beam Epitaxy and Characterization of
P-doped - Comparison of P sources |
Tottori Univ. 1,Tokushima Bunri Univ. 2@*Yoshida
Hiroshi 1,Matsumoto Hiroyuki 1,Ichino Kunio 1,Kobayashi Hiroshi 2 |
| ’ |
6 |
An artificial control of slow-mode degradation
in ZnSe-based white LED |
Faculty of Eng. Tottori Univ. 1,Tottori Univ. VBL
2@*Hashimoto Yutaka 1,Adachi Masahiro 2,TsuTsumi Sueyuki 1,Urata Akihiro
1,Ohashi Syuji 1,Morita Yasuhiro 1,Abe Tomoki 1,Kasada Humihiro 1,Ando Koshi
1 |
| |
7 |
Proposal of MgSe/BeZnSeTe superlattice barriers
for II-VI light emitting devices on InP substrates |
Sophia Univ. 1@Hiroaki Hayashi 1, Ichirou Nomura
1, Tomohiro Yamazaki 1, Katsumi Kishino 1 |
| |
8 |
Growth and optical property characterization of
ZnTe:(Al,N) layers using a co-dopig technique (II) |
Waseda Univ., Lab. for Mat.Sci.&Tech. 1@Ichiba
Aya 1, Amano Yu 1, Kunimasa Kei 1, Ueno Jun 1, Ogura Kouhei 1, Kobayashi
Masakazu 1 |
| |
9 |
High p-type doping of MgZnCdSe II-VI compounds
on InP substrates by introducing ZnTe thin layers |
Sophia Univ. 1@*Kan Sueoka 1,Ichirou Nomura 1,Takumi
Saitoh 1,Soh Kuroiwa 1,Katsumi Kishino 1 |
| |
10 |
Highly p-type doping of MgSe/ZnCdSe superlattices
on InP substrates by introducing ZnSeTe thin layers and application for
light emitting devices |
Sophia Univ 1@Soh Kuroiwa 1, Ichirou Nomura 1,
Takumi Saitoh 1, Kan Sueoka 1, Katsumi Kishino 1 |
| |
|
Break 15:30`15:45 |
|
| |
11 |
Photoluminesecense and Annealing effect for the
ZnTe films grown by Molecular Beam Epitaxy |
Hokkaido Inst.of.Tech.@*Shigaura Goichi 1,Ohashi
Masahiro 1,Ichinohe Yosihiro 1,Imai Kazuaki 1,Sawada Takayuki 1,Suzuki Kazuhiko
1,Kimura Nobuyuki 1,Kimura Naohiko 1 |
| |
12 |
Low-temperature lasing characteristics of ZnCdTe/MgZnSeTe
II-VI semiconductor laser diodes on ZnTe substrates |
Sophia Univ. 1@*Ichirou Nomura 1,Akihiko Kikuchi
1,Katsumi Kishino 1 |
| ’ |
13 |
PbTe/CdTe Superlattices Grown by Molecular Beam
Epitaxy |
New Mater. Res. Center, Osaka Inst. of Tech. 1@*Harada
Hisashi 1, Katou Takuma 1, Koike Kazuto 1, Yano Mitsuaki 1 |
| |
14 |
Preparation and Characterization of CdZnTe Films
by Close-Spaced Sublimation Method |
Kisarazu National College of Technology 1, SHIMADZU
Co. 2@Makoto Kono 1, Takayuki Jibiki 1, Tomoaki Hamaguchi 1, Tamotsu Okamoto
1, Satoshi Tokuda 2, Hiroyuki Kishihara 2 |
| |
15 |
Photoluminescence Study of CdZnTe Films by CSS
Method |
Kisarazu National College of Technology 1, SHIMADZU
Co. 2@*Jibiki Takayuki 1, Kono Makoto 1, Hamaguchi Tomoaki 1, Okamoto Tamotsu
1, Tokuda Satoshi 2, Kaino Masatomo 2 |
| |
16 |
Zn-K X-ray fluorescence holography of diluted
magnetic semiconductor Zn0.4Mn0.6Te |
Hirishima City Univ. 1, Hiroshima Inst. Tech. 2,
IMR Tohoku Univ. 3@*Happo Naohisa 1, Hosokawa Shinya 2, Hayashi Kouichi
3, Kimuro Junichi 1, Ozaki Toru 2, Horii Kenju 1 |
| |
17 |
Study of Large Area CdTe X-ray and Α-ray Imaging
Detectors Grown by MOVPE(X VI)`Electrical Properties of Thick CdTe/Si Diodes` |
Nagoya Inst. of Tech. 1, Nagoya Inst. of Tech.
2@*Shingu Ikki 1, Eguchi Kazutaka 2, Ohnishi Hirofumi 2, Takahashi Hiroyuki
2, Noda Kotaro 2, Ohashi Hiroyuki 1, Omura Motohiro 1, Tanaka Ryuichi 1,
Minoura Shimpei 1, Agata Yasunori 2, Niraula Madan 2, Yasuda Kazuhito 2 |
| |
18 |
Study of Large Area CdTe X-ray and Α-ray Imaging
Detectors Grown by MOVPE (XVIII)
~Optical Properties of Thick CdTe/Si layers~
|
Nagoya Inst. of Tech. 1, Nagoya Inst. of Tech.
2@*Noda Kotaro 1, Eguchi Kazutaka 1, Oonishi Hirofumi 1, Takahashi Hiroyuki
1, Suzuki Yoshihiro 2, Kyo Keisaku 2, Hasegawa Dai 2, Agata Yasunori 1,
Niraula Madan 1, Yasuda Kazuhito 1 |
| |
19 |
Study of Large Area CdTe X-ray and Α-ray Imaging
Detectors Grown by MOVPE (XVIII)
`Effects of KrF laser irradiation on CdTe crystallinity`
|
Nagoya Inst. of Tech. 1,Nagoya Inst. of Tech. 2@*Nakamura
Kouji 1,Noda Koutarou 2,Yokota Masahiro 1,Agata Yasuhiro 2,Niraula Madan
2,Yasuda Kazuhito 2,Abe Kouji 2,Eryu Osamu 2 |
| 13.3 III-V
Epitaxial Growth |
| Mar. 22 9:00`13:30 |
| 22a-Q-@/ I |
| £’ |
1 |
Hexagonal Pillars with single InxGa1-xAs/GaAs Quantum
Well Fabricated by Selective Area Metal Organic Vapor Phase Epitaxy
|
RCIQE, Hokkaido Univ.@Yang Lin 1, Motohisa Junichi
1, Fukui Takashi 1 |
| |
2 |
Growth mechanism of compound semi-conductors on
porous substrates |
Fukushima Univ. 1@*Michio Sato 1 |
| |
3 |
Growth mechanism of GaAs nanowires by selective
area MOVPE |
RCIQE,Hokkaido Univ. 1@*Ikejiri Keitaro 1,Noborisaka
Jinichiro 1,Hara Shinjiroh 1,Motohisa Junichi 1,Fukui Takashi 1 |
| ’ |
4 |
Growth process of self-organized GaAs nanocrystals
deposited on Si(100) surface |
VBL Kobe Univ. 1, Dep. Mech. Kobe Univ. 2@*Usui
Hiroyuki 1, Yamada Kensuke 2, Yadusa Hidehiro 2 |
| ’ |
5 |
Fabrication of vertically aligned InAs nanowire
array by Selective-Area MOVPE |
G.S.IST Hokudai Univ. 1, RCIQE 2@*Tomioka Katsuhiro
1.2,Mohan Premila 1,Noborisaka Jinichiro 1.2,Hara Shinjiro 1.2,Motohisa
Junichi 1.2,Fukui Takashi 1.2 |
| |
6 |
Mosaicity of GaAs/GaAsP layers grown on GaAs substrate |
Daido Inst. Tech. 1, Osaka Pre. Univ. 2, Daido
Steel Co. 3@Iseki Maki 1, *Saka Takashi 1, Matsuyama Tetsuya 2, Horinaka
Hiromichi 2, Kato Toshihiro 3 |
| |
|
Break 10:30`10:45 |
|
| |
7 |
Optimization of SIMS(Secondary Ion Mass Spectrometry)
measurement conditions of III-V compounds semi-conductor film |
Toray Research Center Inc,@Sameshima Junichiro
1,Yamamoto Harumi 1,Muraji Yuichi 1,Karen Akiya 1 |
| |
8 |
Effects of Nitridation on InAs/GaAs Quantum Dots
with Different Sizes |
The Grad.School of Sci. & Tech,Kobe Univ. 1.Fac.
of Eng,Kobe Univ.2@*Mizuno Hiroshi 1.Kikuno Mio 1.Matsushita Kazuyuki 1.Inoue
Tomoya 1.Shimizu Norihiko 1.Kita Takashi 1,2.Wada Osamu 1,2 |
| |
9 |
Atomic-Scale Investigation on Nitrided InAs Quantum
Dots Using High-Resolution TEM |
Grad. School of Sic.&Tech. Kobe Univ. 1, Fac. of
Eng. Kobe Univ. 2, Research Center for Ultra-High Voltage Electron Microscopy
Osaka Univ. 3@*Inoue Tomoya 1, Matsushita Kazuyuki 1, Kita Takashi 1,2,
Wada Osamu 1,2, Mori Hirotaro 3, Yasuda Hidehiro 1,2 |
| |
10 |
Cross-sectional STM observation of interfacial
structures and compositional distributions in InP-on-InGaAs interface: Well
thickness dependence |
Nagoya Univ.@Akanuma Yasuhiko 1, *Yamakawa Ichirou
1, Lee WoSikku 1, Ujihara Toru 1, Takeda Yoshikazu 1, Nakamura Arao 1 |
| |
11 |
Investigation of mechanism to form As compositional
fluctuation at InP/GaInAs/InP hetero-interfaces by utilizing the X-ray CTR
scattering measurement |
Graduate school of Engineering Nagoya Univ. 1,
Department of Engineering Nagoya Univ. 2, VBL Nagoya Univ. 3 @Ohtake Yusuke
1, Eguchi Tastuya 2, Miyake Shinsuke 1, Lee W. S. 1, Tabuchi Masao 3, Takeda
Yoshikazu 1,3 |
| |
|
Lunch 12:00`13:00 |
|
| 22p-Q-@/ I |
| |
1 |
Cross-sectional STM observation of InAs quantum
dots grown by a double-cap method II |
Nagoya Univ. 1,NIMS 2, Fujitsu Lab. 3 @*Akanuma
Yasuhiko 1, Yamakawa Ichirou 1, Sakuma Yoshiki 2, Usuki Tatsuya 3, Nakamura
Arao 1 |
| |
2 |
Real-time X-ray diffraction study of InAs/GaAs(001)
growth |
JAEA 1@Takahasi Masamitu 1, Kaizu Toshiyuki 1,
Mizuki Jun'ichiro 1 |
| 13.3 III-V
Epitaxial Growth |
| Mar. 24 9:00`18:45 |
| 24a-P-@/ I |
| |
1 |
GaNAs(001) surfaces during p-MBE growth |
CIR Tohoku Univ. 1, IMR Tohoku Univ. 2, Dept. Sci.
Chiba Univ. 3@Takahiro Mori 12, Takashi Hanada 12, Genki Kobayashi 12, Ryo
Kobayashi 3, Takashi Nakayama 3, Takafumi Yao 12 |
| |
2 |
Influence of surface steps on epitaxial growth
of GaAsN by CBE |
Toyota Tech. Inst.@*Kenichi Nishimura 1, Hae-Seok
Lee 1, Hidetoshi Suzuki 1, Tetsuya Kawahigashi 1, Yoshio Ohshita 1, Masafumi
Yamaguchi 1 |
| |
3 |
N content dependence of substrate surface orientation
during MOVPE growth of GaAsN films |
The Univ of Tokyo 1,Chulalongkorn Univ 2@*Wataru
Ono 1,Fumihiro Nakajima 1,Sigeyuki Kuboya 1,Sakuntam Sanorpim 2,Ryuji Katayama
1,Kentaro Onabe 1 |
| |
4 |
MOVPE Growth of InAsN/GaAs Multiple Quantum Well
Structures |
Department of Advanced Materials Science, The Univ.
of Tokyo 1@Kuboya Shigeyuki 1, Thieu Quang Tu 1, Ono Wataru 1, Nakajima
Fumihiro 1, Katayama Ryuji 1, Onabe Kentaro 1 |
| |
5 |
Residual-gas effect on the GaNyAs1-y/GaAs
superlattices growth process by RF-MBE |
Kagawa Univ. 1, ISSP 2@*Kensuke Fujii 1, Katsuhiro
Takao 1, Masayoshi Kakino 1, Noriaki Tsurumachi 1, Hayato Miyagawa 1,Hiroshi
Itoh 1, Shunsuke Nakanishi 1, Hidefumi Akiyama 2, Shun Koshiba 1
|
| |
6 |
Growth and evaluation of GaNxAs1-x/GaAs
SL by RF-MBE method using As cracking source |
Kagawa Univ. 1, ISSP 2@*Masayoshi Kakino 1, Kensuke
Fujii 1, Katsuhiro Takao 1, Hayato Miyagawa 1, Noriaki Tsurumathi 1, Hiroshi
Itoh 1, Shunsuke Nakanishi 1, Hidefumi Akiyama 2, Shun Koshiba 1 |
| |
|
Break 10:30`10:45 |
|
| |
7 |
Study on the improvement of luminescence efficiency
of GaAsN alloys using Raman spectroscopy |
Saitama Univ. 1, Univ, Tokyo 2@Tanioka Kentaro
1, Endo Yuta 1, Hijikata Yasuto 1, *Yaguchi Hiroyuki 1, Yoshida Sadafumi
1, Aoki Daiichiro 2, Onabe Kentaro 2 |
| ’ |
8 |
Dynamic characteristics of excitons bound to N-isoelectric
traps in GaAs |
Waseda Univ.1, NTT BRL2, PDI3@Koji ONOMITSU1, Toshiki
MAKIMOTO2, Hisao SAITO2, Klaus PLOOG3 and Yoshiji HORIKOSHI1 |
| |
9 |
Localized electronic states of isoelectronic centers
of nitrogen doped on GaAs(001) plane |
The Grad. School of Sci. & Tech,Kobe Univ. 1,Fac.
of Eng,Kobe Univ. 2@*Inoue Takumi 1,Kita Takashi 1,2,Wada Osamu 1,2 |
| |
10 |
N Content Control of MBE Grown GaPN Layer |
AIST 1, Tokyo Univ. of Sci. 2@Hitoshi Kawanami
1, *Naoto Nakazawa 2, Tsutomu Iida 2 |
| |
11 |
Optical and electrical properties of InPN epilayers
grown by MOMBE |
NTT Photonics Labs. 1@*Manabu Mitsuhara 1, Sato
Tomonari 1, Watanabe Takao 1, Kondo Yasuhiro 1 |
| |
|
Lunch 12:00`13:00 |
|
| 24p-P-@/ I |
| |
1 |
MOVPE growth of GaPN films using TBP (2) |
The Univ. of Tokyo 1@*Nakajima Fumihiro 1, Ono
Wataru 1, Kuboya Shigeyuki 1, Katayama Ryuji 1, Onabe Kentaro 1 |
| |
2 |
Investigation of defect level in p type InGaPN
by photoconductivity transient measurement. |
Toyohashi Univ. Tech.1@*Eri Shimada 1,Daisuke Minohara
1,Akihiro Wakahara 1,Hiroo Yonezu 1,Su Yon Moon 1,Atushi Sato 1,Hiromitu
Nakai 1,Hiroshi Okada 1,Yuzo Furukawa 1 |
| |
3 |
Growth of GaNSb by RF-MBE |
National Inst. of Info. & Com. Tech.@*Akahane Kouichi
1, Yamamoto Naokatsu 1, Gozu Shin-ichiro 1, Ueta Akio 1, Ohtani Naoki 2,
Tsuchiya Masahiro 1 |
| |
4 |
MBE Growth of Thick InGaAsN Layers on InP Substrates |
Transmission Devices R&D Laboratories, Sumitomo
Electric Industries, Ltd. 1, R&D Planning Department, Sumitomo Electric
Industries, Ltd. 2, Frontier Science Innovation Center, Osaka Prefecture
Univ. 3, CREST 4@*Miura Kouhei 1, Nagai Youichi 1, Iguchi Yasuhiro 1, Okada
Hiroshi 2, Kawamura Yuuichi 3 4 |
| |
5 |
Evaluation of Sb in Thick InGaAsSbN Layers on InP
Substrates by MBE Growth |
Transmission Devices R&D Laboratories, Sumitomo
Electric Industries, Ltd. 1, R&D Planning Department, Sumitomo Electric
Industries, Ltd. 2, Frontier Science Innovation Center, Osaka Prefecture
Univ. 3, CREST 4@*Miura Kouhei 1, Nagai Youichi 1, Iguchi Yasuhiro 1, Okada
Hiroshi 2, Kawamura Yuuichi 3 4 |
| |
6 |
MOMBE growth of InGaAsN epilayers on InP substrates |
NTT Photonics Labs.@*Mitsuhara Manabu 1, Tomonari
Sato 1, Kakitsuka Takaaki 1, Takao Watanabe 1, Yasuhiro Kondo 1 |
| |
7 |
Investigation of defects in Ga(In)NAs thin films
grown by atomic H-assisted RF-MBE |
Univ. of Tsukuba, Inst. of Appl. Phys.@*Shimizu
Yukiko 1, Mura Yusuke 1, Uedono Akira 1, Okada Yoshitaka 1 |
| |
8 |
Temperature dependence of carrier mobility in GaInNAs
thin films grown by RF-MBE |
Univ. of Tsukuba, Inst. of Applied Physics 1@*Naoya
Miyashita 1, Yukiko Shimizu 1, Yoshitaka Okada 1 |
| |
9 |
MOVPE growth and optical properties of GaInNAs
quantum wells on misoriented substrates |
Sumitomo Electric Industries 1, Osaka City Univ.
2@*Ishizuka Takashi 1, Doi Hideyuki 1, Katsuyama Tsukuru 1, Hashimoto Jun
2, Nakayama Masaaki 2 |
| |
10 |
Optical characteristics of GaInNAs/GaNAs QWs grown
by MOVPE |
Sumitomo Electric Industries 1@*Yamada Takashi
1, Ishizuka Takashi 1, Mitui Nobuyuki 1, Fujii Kousuke 1, Hashimoto Junichi
1, Katsuyama Tsukuru 1 |
| |
11 |
Quantum well number dependence of the PL characteristics
of rapid thermally annealed GaInNAs/GaAs-MQW |
Hitachi CRL 1@Kitatani Takeshi 1, Kasai Junichi
1, Nakahara Kouji 1, Tsuchiya Tomonobu 1, Adachi Koichiro 1, Aoki Masahiro
1, Kondow Masahiko 1 |
| |
|
Break 15:45`16:00 |
|
| |
12 |
New Analysis Procedure of Structural Deterioration
of GaInNAs/GaAs Double Quantum Wells by X-ray Diffraction |
NTT PHL 1, NTT BRL 2@*Nakashima Kiichi 1,Tateno
Kouta 2 |
| £ |
13 |
MBE Growth and Analysis of TlGaInNAs/GaAs Quantum
Well Structures |
ISIR@D.Krishnamurthy ,Matsumoto Takeshi,Fujiwara
Atsushi,Hasegawa Shigehiko,
*Asahi Hajime |
| |
14 |
Characteristics of InAsSbN infrared QW laser diodes
grown by MBE on InP substrates |
Osaka Prefecture Univ. 1 CREST-JST 2@Kawamura Yuichi
1,2, Nakagawa tomokatsu 1, Inoue Naohisa 1 |
| |
15 |
Application of ITO transparent electrode for Si/III-V-N/Si
structure |
Toyohashi Univ. Tech.@Moon Soo Young, Yamada Shintaro,
Morisaki Yuji, Furukawa Yuzo, Wakahara Akihiro, Yonezu Hiroo |
| |
16 |
Growth temperature effect of InSb(111) films on
Si(111) substrate |
University of Toyama 1@*Kazunori Murata 1, Yuu
Tamura 1, Norsuryati Binti Ahmad 1, Masayuki Mori 1,
Toyokazu Tambo 1, Chiei Tatsuyama 1 |
| |
17 |
Epitaxial growth of InSb films on Si(111)-In(2x2)
surface phase |
Univ. of TOYAMA@*M.Mori, M.Saito, Y.Yamashita,
T.Tambo, C.Tatsuyama |
| |
18 |
Relation between dislocation density and mosaicity
in In(Al)Sb/GaAs(001) heterostructures |
JAIST@*Sato taku 1, Ide Yasuaki 1, Takita Hayato
1, Suzuki Toshi-kazu 1, Yamada Syoji 1 |
| |
19 |
AlAsSb/InGaAs/InAlAs quantum well structures grown
on (100) InP substrates by MBE |
Osaka Univ. 1@Asano Takaya 1, *Shimomura Satoshi
1, Kitada Takahiro 1, Hiyamizu Satoshi 1 |
| |
20 |
Investigation of Growth Condition for GaAsSb Quantum
Wells by MBE |
Tokyo Inst. of Tech.@*Kashihara Yoshihiro 1, Miyamoto
Tomoyuki 2, Matsuura Tetsuya 3, Ohta Masataka 4, Iwasaki Takahiro 5. Koyama
Fumio 6 |
| |
21 |
Fabrication of InGaAs/AlAs/AlAsSb coupled-quantum-well
structures with low indium contents |
AIST 1, Fujitsu Lab. 2@*Masanori Nagase 1, Teruo
Mozume 1, Takasi Simoyama 2, Toshifumi Hasama 1, Hiroshi Ishikawa 1 |
| |
22 |
Conduction characteristics of GaAs1-xSbx:Sn
grown by MBE employing AlSb buffer layer |
Nagaoka Univ. of Tech.@*Sasaki Tomonori 1, Jinbo
Yoshio 1, Uchitomi Naotaka 1 |
| 13.3 III-V
Epitaxial Growth |
| Mar. 25 9:00`18:45 |
| 25a-T-@/ I |
| |
1 |
Kinetic study on GaAs-MOVPE surface reaction process
by analyzing selective area growth profile |
School of Eng. The Univ. of Tokyo 1, RCAST The
Univ. of Tokyo 2, JST-SORST 3@*Shimogaki Yukihiro 1,3, Song Haizheng 1,3,
Sugiyama Masakazu 1,3, Nakano Yoshiaki2,3 |
| £ |
2 |
Study of the ridged growth on the misoriented GaAs
substrates in selective area MOVPE |
School of Eng., The Univ. of Tokyo 1, RCAST, The
Univ. of Tokyo 2, JST-SORST 3@*Song Haizheng 1,3, Sugiyama Masakazu 1,3,
Nakano Yoshiaki 2,3, Shimogaki Yukihiro 1,3 |
| |
3 |
Mechanism of immiscibility in GaInAsP on GaAs substrate
grown by MOVPE (5) |
Mitsubishi Electric Corp. 1@*Ono Kenichi1,Takemi
Masayoshi1 |
| |
4 |
Control of strain and polarization in MOVPE selective
area growth of InGaAsP/InP |
Univ. of Tokyo 1, RCAST Univ. of Tokyo 2, JST-SORST@*Tomonari
Shioda 1-3, Foo Cheong Yit 1-3, Xueliang Song 2,3, Masakazu Sugiyama 1,3,
Yukihiro Shimogaki 1,3, Yoshiaki Nakano 1-3 |
| £ |
5 |
Growth of Heavily Ge-doped GaAs by MEE at Low Temperature |
Waseda Univ.@*Chavanapranee Tosaporn 1, Horikoshi
Yoshiji 1 |
| |
6 |
Electrical Properties of Low-Temperature Grown
InAs and Their Changes Due to Annealing |
Shimane Univ. 1@*Ikariyama Rikyu 1,Takushima Masanao
1,Kajikawa Yasutomo 1 |
| |
|
Break 10:30`10:45 |
|
| |
7 |
Characteristics of Schottky-barrier diodes of Si-sheet-doped
InAlAs layers grown on (411)A InP substrates by MBE |
Osaka Univ. 1@*Takahiro Kitada 1, Hiroshi Sagisaka
1, Shinichiro Kusunoki 1, Satoshi Shimomura 1, Satoshi Hiyamizu 1 |
| |
8 |
Peudomorphic InGaAs/InAlAs MD-QW structures with
thin AlAs Schottky barrier grown on (411)A InP substrates by MBE |
Osaka Univ.@* = Kusunoki Shinichirou 1, Sagisaka
Hiroshi 1, Kitada Takahiro 1, Simomura Satoshi 1, Hiyamizu Satoshi 1, |
| |
9 |
Gain spectra of self-organized GaAs/(GaAs)4(AlAs)2
QWR laser grown on (775)B GaAs substrate by MBE. |
Graduate School of Eng.Sci. Osaka Univ. 1@*Fujita
Takeya 1,Ohmori Kazuyuki 1,Kitada Takahiro 1,Satoshi Shimomura 1,Satoshi
Hiyamizu 1 |
| |
10 |
MBE growth of TlInGaAs/TlInP/InP SCH LDs and their
laser operation |
Osaka Univ. ISIR. 1@*Fujiwara Atsushi 1,Matsumoto
Takeshi1,Krishnamurthy Daivasigamani 1, Hasegawa Shigehiko 1,Asahi Hajime
1 |
| £ |
11 |
Behavior of Bismuth in MBE Growth of InGaAs and
InGaAsBi |
Kyoto Inst. Tech.@*Gan Feng 1,Kunishige Oe 1,Masahiro
Yoshimoto 1 |
| |
|
Lunch 12:00`13:00 |
|
| 25p-T-@/ I |
| |
1 |
Growth of InAs quantum dots embedded by GaInNAs
by MOCVD and fabrication of lasers |
Nanoelectronics Collaborative Research Center 1,Inst.
of Industrial Sience
2,Research Center for Advanced Sience and Technology 3,Corporate R&D Center,
Toshiba Corporation 4@*Hashimoto Rei 1,4,Kushibe Mitsuhiro 1,4,Ezaki Mizunori
1,4,Hatakoshi Genichi
1,4,Nishioka Masao 1,2,Arakawa Yasuhiko 1,2,3 |
| |
2 |
Investigation of strain compensation effect on
multi-stacked InAs self-assembled quantum dots |
Tsukuba Univ. 1@*Oshima Ryuji 1, Hashimoto Takayuki
1, Shigekawa Hidemi 1, Okada Yoshitaka 1 |
| £ |
3 |
Influence of growth interruption in stacked InAs/GaAs
quantum dots |
ATR-WEL@*Shanmugam Saravanan 1, Hitoshi Shimizu
1 |
| ’ |
4 |
Self-arrangement of high-density InAs quantum-dots
on GaAsSb/GaAs(001) substrates |
Univ. of Electro-Comm. 1@*Kanto Toru 1,Yamaguchi
Koichi 1 |
| |
5 |
Fabrication of InAs quantum dots array on patterned
GaAs substrates
by MBE |
Noukou Univ. 1@*Masuda Takeshi 1, Thomine Hiroyuki
1, Morishita Yoshitaka 1 |
| |
6 |
Effect of InGaAs buffer layer and growth interruption
of InAs on InAs quantum dots
|
Tokyo Univ. of Agri & Tech 1@*Masuda Takeshi 1,Cho
Sho 1,Toumine Hiroyuki 1,Hasegawa Tomoaki 1,Morishita Yoshitaka 1 |
| ’ |
7 |
Effects of AlAs Coating for InAs Quantum Dots II |
N.I.T. 1@*Yokota Hiroshi 1, Suzuki Yuji 1, Iizuka
Kanji 1, Suzuki Toshimasa 1 |
| |
8 |
MBE growth of high-density and high-uniformity
InAs quantum-dots on Sb/GaAs layers -InAs growth conditions- |
Univ. of Electro-Communications 1@Tonomura Shinichi
1, Ohta Masahiko 1, Yamaguchi Koichi 1 |
| ’ |
9 |
MBE growth of high-density and high-uniformity
InAs quantum-dots on Sb/GaAs layers - Sb/GaAs growth conditions - |
Univ. of Electro-Comm. 1@*Ohta Masahiko 1, Yamaguchi
Koichi 1 |
| |
10 |
Comparison of buffer-material for InAs quantum
dots |
ATR Laboratories 1@*Shimizu Hitoshi 1, Shanmugam
Saravanan 1 |
| ’ |
11 |
Polarization Characteristics of MBE grown InAs
QD with Ga(In)AsSb Cover Layer |
Microsys P&I lab, Tokyo Tech1@*Matsuura Tetsuya1,
Tomoyuki Miyamoto1, Masataka Ohta1, and Fumio Koyama1 |
| |
|
Break 15:45`16:00 |
|
| £ |
12 |
1.55 Κm emission from InAs/GaAs quantum dots via
antimony-mediated growth by metalorganic chemical vapor deposition |
NCRC.1,LIMMS/CNRS-IIS.2@*D. Guimard1,2, H.R. Lee1,
M. Nishioka1, S. Tsukamoto1 and Y. Arakawa1 |
| |
13 |
MBE growth of high-density and high-uniformity
InAs quantum-dots on GaAs layers |
Univ. of Electro-Communications 1@*Tomita Mitsuaki
1,Yamaguchi Koichi 1 |
| |
14 |
High uniformity InGaAs quantum dots grown by MBE |
AIST 1, CREST-JST 2@*Takeyoshi Sugaya1,2, Shigenori
Furue1,2, Takeru Amano1,2, Kazuhiro Komori1,2 |
| |
15 |
Growth temperature and supply dependence of InAs
quantum dots on InP(001) substrates |
Sophia Univ. 1,ATR Wave Engineering Lab. 2@*Okawa
Tatsuya 1,Yamauchi Yusuke 1,Yamamoto Junya 1,Yoshida Junji 2,Shimomura Kazuhiko
1 |
| ’ |
16 |
The wide-band light emission around 850 nm from
InAsP quantum dots with distributed size and As/P composition |
Nagoya Univ.@Miyake Shinsuke |
| |
17 |
Broadband Polarization-independent Luminescence
by Columnar InAs Quantum Dots on InP Grown by MOVPE |
Fujitsu 1, OITDA 2, IIS, Univ. of Tokyo 3, NCRC,
Univ. of Tokyo 4, RCAST, Univ. of Tokyo 5 @*Kawaguchi Kenichi 1,2, Yasuoka
Nami 1,2, Ekawa Mitsuru 1,2, Akiyama Tomoyuki 1,2, Ebe Hiroji 3,4, Sugawara
Mitsuru 1, Arakawa Yasuhiko 3,4,5 |
| |
18 |
Polarized Optical Gain Characteristic of InGaAs-Capped
InAs/GaAs Quantum Dots |
Fac. of Eng,Kobe Univ. 1, The Grad. School of Sci.
& Tech,Kobe Univ. 2, NCRC, IIS,Univ. of Tokyo 3, Fujitu Lab.Ltd 4@*Nakatani
Hiroaki 1, Moriwaki Kazuyuki 1, Tamura Nobuhiro 2, Y.C.Zhang 2, Kita Takashi
1,2, Wada Osamu 1,2, Ebe Hiroharu 3, Nakata Yoshiaki 3, Arakawa Yasuhiko
3, Sugawara Mitsuru 4 |
| |
19 |
MOVPE growth of In(Ga)As-quantum dots using Bi
as a surfactant |
NTT Photonics labs. 1, NTT Basic Res. Labs. 2@*Okamoto
Hiroshi 1CGotoh Hideki 2, Cade Nicholas 2, Kamada Hidehiko 2, Sogawa Tetsuomi
2 |
| |
20 |
Effect of nitrogen exposure on GaSb/GaAs quantum
dots |
Hokkaido Univ. 1, CREST-JST 2, Trichemical Lab.
3 @*Uesugi Katsuhiro 1,2, Suemune Ikuo 1,2, Endo Michiaki 1, Machida Hideaki
3 |
| |
21 |
Growth of InAsN QDs by RF-MBE and their properties |
National Institute of Information and Communications
Technology 1, Doshisya Univ. 2@*Ueta Akio 1, Gozu Shin-ichirou 1, Akahane
Kouichi 1, Yamamoto Naokatsu 1, Tuchiya Masahiro 1, Ohtani Naoki 2 |
| |
22 |
Investigation of photoluminescence characteristics
of InAs quantum dots on GaNAs buffer layer |
Tokyo Inst. of Tech. 1@*Ryoichiro Suzuki 1,Tomoyuki
Miyamoto 2,Tetsuya Matsuura 3,Fumio Koyama 4 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 22 9:00`17:45 |
| 22a-ZF-@/ I |
| ’ |
1 |
High rate growth of thick GaN on c-plane sapphire
substrate by MOVPE |
Meijo Univ. 1,Kyocera Corp.2@*Tanaka Yuki 1,Furukawa
Hiroko 1,Tsuda Michinobu 1,2,Iwaya Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi
1,Akasaki Isamu 1 |
| |
2 |
GaN on BP bulk crystal grown by flux method |
Univ. of Tokushima 1@Yamamoto Mamiko 1, Tsukihara
Masashi 1, Nishino Katsushi 1, Naoi Yoshiki 1, Sakai Shiro 1 |
| |
3 |
Growth of GaN with low dislocation density on sapphire
substrates using BGaN micro-islands |
NTT Basic Research Labs. 1@*Akasaka Tetsuya 1,
Toshiki Makimoto 1 |
| |
4 |
Electronic characteristics of GaN and AlGaN/GaN
heterostructures grown using BGaN micro-islands |
NTT Basic Research Labs.@*Akasaka Tetsuya 1, Kobayashi
Yasuyuki 1, Muraki Kouji 1, Hirayama Yosirou 1, Makimoto Toshiki 1 |
| |
5 |
Relationship Between Optical Property and Dislocation
Density of the GaN:Si Films Grown on AlN Buffer Layer With Various Film
Thickness
|
Optoelectronics, Toyoda Gosei Co.@Yoshiki Saito
1, Koji Okuno 1, Mitsuhisa Narukawa 1, Shuhei Yamada 1, Yusuke Toyoda 1,
Akira Ishiga 1, Shinichi Matsui 1, Kazuki Nishijima 1, Masaaki Osawa 1,
Tetsuya Taki 1 |
| |
6 |
Relationship between dislocations and surface defects
of an AlGaN/GaN epi-layer on a Si substrate |
Furukawa Electric Co.,Ltd Yokohama R&D Laboratories
1@*Sasaki Hitoshi 1, Kato Sadahiro 1, Matsuda Takeyoshi 1, Satoh Yoshihiro
1, Iwami Masayuki 1, Yoshida Seikoh 1 |
| |
|
Break 10:30`10:45 |
|
| |
7 |
MOVPE growth of (11-22)GaN on a patterned (113)Si
substrate |
Nagoya Univ.@*Hikosaka Toshiki 1, Kurogi Toshiyuki
1, Honda Yoshio 1, Yamaguchi Masahito 1, Sawaki Nobuhiko 1
|
| |
8 |
Mg doping in (1-101)GaN grown on a patterned (001)Si
substrate |
Nagoya Univ.@*Hikosaka Toshiki 1, Koide Norikatsu
1, Honda Yoshio 1, Yamaguchi Masahito 1, Sawaki Nobuhiko 1 |
| |
9 |
Influence of H2 carrier gas on the direct
growth of low-temperature GaN buffer layers on Si substrates |
Tokyo Univ. of A & T@1, Kyushu Univ.@2@*Hisashi
Murakami 1, Tomoyuki Iwamoto 1, Junpei Tajima 1, Yuriko Matsuo 1, Yoshihiro
Kangawa 2, Yoshinao Kumagai 1, Akinori Koukitu 1 |
| |
10 |
Epitaxial Growth of GaN on 6h (111) Si substrate
with MOVPE |
Taiyo Nippon Sanso corp.1, *Nagoya Inst. of Tech.2@*Akinori
Ubukata1, Kazutada Ikenaga1, Nakao Akutsu1, Koh Matsumoto1 and Takashi2
Egawa |
| |
11 |
High resistive GaN layer on 4-inch Si for a high
power GaN FET |
Furukawa Electric Co.,Ltd@*Sadahiro Kato, Yoshihiro
Satoh, Toshiaki Kazama, Hitoshi Sasaki, Masayuki Iwami, Seikoh Yoshida |
| |
|
Lunch 12:00`13:00 |
|
| 22p-ZF-@/ I |
| |
1 |
Low temperature growth of GaN films on Zn-face
ZnO substrates |
Tokyo Univ. of Science 1,The Univ. of Tokyo 2,KAST
3@*Shirakura Yuki 1,Kobayashi Atsushi 2,Ohta Jitsuo 2,3,Miyamura Kazuo 1,Fujioka
Hiroshi 2,3 |
| |
2 |
Low temperature epitaxial growth of III nitrides
of 6H-SiC step substrates |
Univ. of Tokyo 1,2,4, KAST 3@*Kim M.H. 1, Ohta
J. 2,3, Fujioka H. 2,3, Oshima M. 1,4 |
| ’ |
3 |
Fabrication of GaN films by Near-Atmospheric Plasma-Assisted
Chemical Vapor Deposition at Low Temperature |
NIMS 1, Sekisui Chemical Co. Ltd. 2@*Nagata Takahiro1,
Uehara Tsuyoshi2, Sakuma Yoshiki1, Chikyow Toyohiro1 |
| |
4 |
Growth of A-plane InN on Nitridated R-plane Sapphire
by ECR-MBE and its growth mechanisms |
Dept. of Photonics1, Center for Promotion of the
COE Program 2, Ritsumeikan Univ.
@*Kumagai Yuya1, Tsuyuguchi Akihiro1, Watanabe Satio1, Kurouchi Masahito1,
Teraki Kuniko1, Araki Tsutomu1 , Naoi Hiroyuki2 and Nanishi Yasushi1, 2 |
| ’ |
5 |
Microstructure of A-plane InN grown on R-plane
Sapphire |
Dept of Photonics 1,Center for Promotion of the
COE program 2,Ritsumeikan Univ.@*Watanabe Sachio 1,Kumagai Yuya 1,Tsuyuguchi
Akihiro 1,Araki Tsutomu 1,Naoi Hiroyuki 2,Nanishi Yasushi 1,2 |
| ’ |
6 |
High quality InN grown on micro-facetted InN template |
Dept. of Photonics, Ritsumeikan Univ. 1, Center
for Promotion of the COE Program, Ritsumeikan Univ. 2 @*Daisuke Muto 1,
Hiroyuki Naoi 2, Tsutomu Araki 1, Masahito Kurouchi 1, Yasushi Nanishi 1 |
| |
7 |
RF-MBE growth of hexagonal InN on 3C-SiC(001) substrates
|
Saitama Univ. 1,CREST,JST 2@*Inoue Takeru 1,Iwahashi
Youhei 1, Hirano Shigeru 1,Orihara Misao 1,2,Hizikata Yasuto 1,2,Yaguchi
Hiroyuki 1,2,Yoshida Sadahumi 1,2 |
| |
8 |
RF-MBE Growth of InN/InGaN quantum well structures
on SiC substrates |
Saitama Univ. 1, CREST-JST. 2@*Orihara Misao 1,2,
Iwahashi Youhei 1, Hirano sigeru 1, Inoue Takeru 1, Hijikata Yasuto 1,2,
Yaguchi Hiroyuki 1,2, Yoshida Sadafumi 1,2, |
| |
9 |
Growth temperature dependence of In-rich InGaN
by RF-MBE |
Univ. of Miyazaki 1, Univ. of Tokyo 2@Hironori
Komaki 1,2, Ryuji Katayama 2, Atsuhiko Fukuyama 1, Tetsuo Ikari 1, Masashi
Ozeki 1, Kentarou Onabe 2 |
| |
|
Break 15:15`15:30 |
|
| |
10 |
Crystal Growth and structural characterization
of cubic InGaN with high In content on GaAs(001) substrate by RF-MBE (II) |
Dept. of Advanced Materials Science, The Univ.
of Tokyo 1, Dept. of Electrical and Electronic Engineering, Univ. of Miyazaki
2@*Teruyuki Nakamura 1 , Masatoshi Kohno 1, Hironori Komaki 2, Ryuji Katayama
1, Kentaro Onabe 1 |
| |
11 |
Growth and structural property of RF MBE grown
InGaN epilayers on InN |
AIST PERC 1, JST-CREST 2, TUS 3@*Kitamura Toshio
1,2,3, Xu-Qiang Shen 1 2, Nakanishi Hisayuki 3, Shimizu Mitsuaki 1 2, Okumura
Hajime 1 2 3 |
| |
12 |
Optical properties of In-polarity InN/In0.7Ga0.3N
MQWs structures |
Dept.of Electronics and Mechanical Engineering
1, VBL 2, InN-Project as CREST-program of JST, Chiba-Univ. 3 @*Song-Bek
Che, Takurou Shinada, Yoshihiro Ishitani, Akihiko Yoshikawa |
| £ |
13 |
Built-in potential in In0.75Ga0.22N/InN multiple-quantum-well
structures |
Ritsumeikan Univ.@Kumamoto Tetsurou, Yamamoto Masayuki,
*Kasahara Kenichi, Kurouchi Masahito, Araki Tsutomu, Nanishi Yasushi |
| |
14 |
Fabrication and characterization of InN/GaN MQWs
with a 1 mono-layer InN wells |
Chiba Univ. 1, Chiba Univ.-VBL. 2, InN project
as CREST-program of JST, Chiba Univ. 3@*Yamaguchi Wataru 1, Che Sonbeku
1,2,3, Hideyuki Saito 1, Yoshihiro Ishitani 1,2,3, Akihiko Yoshikawa 1,2,3 |
| ’ |
15 |
Fabrication and characterization of InN/AlInN with
high Al contents supper lattice structures |
Dept. of Electronics and Mechanical Engineering
1, Center for Frontier Electronics and Photonics 2, InN-Project as a CREST-program
of JST, Chiba Univ. 3,@W. Terashima1, 3, S. B. Che1,2,3, Y. Ishitani1,2,3,
and A. Yoshikawa1,2,3 |
| |
16 |
Shape regulation of high In content InAlN nanocolumns
on Si(111) substrate by RF-MBE |
Sophia Univ. 1,CREST 2@*Kamimura Jumpei 1,Kouno
Tetsuya 1,Ishizawa Shunsuke 1,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2 |
| £ |
17 |
Growth and electron transport studies of InAlN/GaN
two-dimensional electron gas |
PERC AIST 1, Taiyo Nippon Sanso co. 2@Kulandaivel
Jeganathan 1, Shimizu Mitsuaki 1, Yano Yoshiki 2, Akutsu Nakao 2, Okumura
Hajime 1 |
| ’ |
18 |
Calculation of Phase Separation in InGaAlBN for
Infra-red Optical Devices |
Inst. for Materials Research, Tohoku Univ. 1@*Kimura
Takeshi 1, Matsuoka Takashi 1 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 22 9:00`11:00 |
| 22a-ZQ-@/ I |
| |
1 |
Epitaxial growth of AlN films on single crystal
Mo substrates |
The Univ. of Tokyo 1,3, KAST 2@*Okamoto Koichiro
1, Inoue Shigeru 1, Matsuki Nobuyuki 2, Kim Taewon 2, Oshima Masaharu 3,
Fujioka Hiroshi 1,2 |
| |
2 |
Epitaxial growth of GaN on mirror Ag substrates |
The Univ. of Tokyo 1, KAST 2@*Inoue Shigeru 1,
Okamoto Kouichirou 1, Matsuki Nobuyuki 2, Kim Tae-Won 2, Fujioka Hiroshi
1,2 |
| ’ |
3 |
Epitaxial growth of group-III nitride films on
single crystal Ta substrates |
The Univ. of Tokyo 1,2, KAST 3@*Hirata Satoshi
1, Okamoto Koichiro 2, Inoue Shigeru 2, Matsuki Nobuyuki 3, Kim Taewon 3,
Ohta Jitsuo 2,3, Fujioka Hiroshi 2,3, Oshima Masaharu 1 |
| |
4 |
Epitaxial growth of cubic GaN on MgO substrates
by PLD |
The University of Tokyo.1, KAST.2@*Satoshi Kawano1,
Atsushi Kobayashi1, Jitsuo Ohta1,2, Hiroshi Fujioka1,2 |
| |
5 |
Structural characterization of hexagonal boron
nitride on Ni(111) substrates grown by FME |
Shonan Institute of Technology 1CNTT BRL 2@*T.
Nakamura1, Y. Kobayashi2, T. Akasaka2, T. Makimoto2, N. Matsumoto1 |
| £’ |
6 |
Pulsed-laser deposition of GaN films on atomically
flat spinel substrates |
Institute of Industrial Science, The University
of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan@Guoqiang Li, Jitsuo
Ohta, Atsushi Kobayashi, and Hiroshi Fujioka |
| |
7 |
Epitaxial growth of AlGaN on lattice-matching ZrB2
substrates |
The University of Tokyo 1, KAST 2@*Kawaguchi Yuji
1, Ohta Jitsuo 1,2, Kobayashi Atsushi 1, Fujioka Hiroshi 1,2 |
| ’ |
8 |
Epitaxial growth and characterization of GaN (10\bar{1}0)
on ZnO substrates |
IIS, Univ. of Tokyo 1, KAST 2@Atushi Kobayashi
1,Yuji Kawaguchi 1, Satoshi Kawano 1, Jtsuo Ohta 1,2, Hiroshi Fujioka 1,2 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 23 9:00`12:00 |
| 23a-ZF-@/ I |
| |
1 |
Growth of AlN single-crystalline layer by UHV sputtering
method |
Tokyo Denki Univ. 1@*Koyama Takanori,Kasugai Yuuiti,Asami
Akinori,Imoto Tomohiro,Nedu Kenji,Shinoda Hiroyuki,Mutsukura Nobuki |
| |
2 |
Growth of AlInN single-crystalline layer by ultra
high vacuum r.f. magnetron sputtering method |
Tokyo Denki Univ. 1@*Matsuo Youhei,Otani Takashi,Fujii
Wataru,Yamazaki Taku,Shinoda Hiroyuki,Mutsukura Nobuki |
| |
3 |
Growth of GaN single-crystalline layer by UHV sputtering
method (III) |
Tokyo Denki Univ. 1@*Asami Akinori 1,Ishii Masumi
1,Isoda Masahiro 1,Imoto Tomohiro 1,Yasuhara Jun 1,Shinoda Hiroyuki 1,Mutsukura
Nobuki 1 |
| |
4 |
Epitaxial relationship between AlN and Mo thin
films in fiber texture |
AIST 1, Kyushu Univ. 2@*Kamohara Toshihiro 1,2,
Akiyama Morito 1, Ueno Naohiro 1, Nonaka Kazuhiro 1, Kuwano Noriyuki 2 |
| |
5 |
Preparation of oriented AlN thin films on polyethylene
terephthalate (PET) films |
AIST@*Akiyama Morito 1, Morofuji Yukari 1, Kamohara
Toshihiro 1, Ohshima Ichiro 1, Nishikubo Keiko 1, Ueno Naohiro 1 |
| |
6 |
Preparation of Aluminum Nitride Thin Films on Nickel-based
Superalloy |
AIST@*Ichiro Ohshima 1, Morito Akiyama 1, Akira
Kakami 1, Tatsuo Tabaru 1, Toshihiro Kamohara 1, Yasunobu Ooishi 1, Hiroaki
Noma 1
|
| |
|
Break 10:30`10:45 |
|
| |
7 |
Fabrication of single crystalline aluminum nitride
thin film by sapphire nitridation method and its characterization |
Tohoku Univ. IMRAM 1, Tokuyama 2, Tohoku Univ.
IMR 3@*Fukuyama Hiroyuki 1, Hakomori Akira 2, Kusunoki Shin-ya 1, Hiraga
Kenji 3 |
| ’ |
8 |
Crystallographic relations between Ώ-Al2O3
and AlN thin film fabricated by Driving-Force-Controlled Nitridation |
Tokuyama 1,Tohoku Univ. IMRAM 2@*Hakomori Akira
1,Fukuyama Hiroyuki 2 |
| |
9 |
Polarity dependence of the quality of AlN films
grown on 4H-SiC |
Tokay Univ 1@*Masaaki Higo, Naoto kato, Takashi
Inushima |
| ’ |
10 |
Growth of high crystalline quality non-polar 4H-AlN
on 4H-SiC(1120) by rf-MBE |
Kyoto University 1, PRESTO JST 2@*Horita Masahiro
1, Suda Jun 1,2, Kimoto Tsunenobu 1 |
| |
11 |
Relation between Film Quality and Film Thickness
of AlN for FBAR Structure |
Tohoku Univ.,RIEC 1@*Sakyu yasuomi 1,Aota Yuji
1,Kameda Suguru 1,Nakase hiroyuki 1,Tsubouchi Kazuo 1 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 23 9:00`12:00 |
| 23a-ZK-@/ I |
| |
1 |
OES of RF discharge and GaN growth in nitrogen
flux modulation using mode-shift of RF plasma |
Doshisha Univ. 1, Arios Inc. 2@*Kikuchi Tomo 1,
Somintac Armando 1, Ariyada Osamu 2, Wada Motoi 1, Ohachi Tadashi 1 |
| |
2 |
Effect of Si irradiation of 3C-SiC template during
RFMBE growth of cubic
GaN(001)/Si(001) |
Doshisha Univ. 1, Arios Inc. @Inui Kousuke 1, Kikuchi
Tomo 1, Ariyada Osamu 2 , Ohachi Tadashi 1, Takeda Yosihiro 1,
Yamabe Nobuhiko 1, Fuzii Noriaki 1, Sibataki Kentarou 1, Yamaguti Satosi
1, |
| |
3 |
Making microwave on Si(011) substrate by etching
and evaluation of GaN by XRD |
Doshisha Univ. 1,Shouwa Denkou 2,@Satoshi Yamaguchi
1,*Nobuhiko Yamabe 1,Tomo Kikuchi 1,Takanori Yasuda 1,Michiya Odawara 2,Takashi
Udagawa 2,Tadashi Ohachi 1, |
| |
4 |
Heteroepitaxial growth of GaN on Α-Al2O3/Si(111)
substrate(II) |
Toyohashi Univ. of Technology@*Hatakenaka Susumu
1,Itoh Mikinori 1, Wakahara Akihiro 1,Okada Hiroshi 1, Ishida Makoto 1 |
| |
5 |
Growth of GaN/AlN multiple quantum disks on (111)Si
substrate and fabrication of IR photodetector |
Sophia Univ. 1,CREST 2,@*Uchida Hiroyuki 1,Matsui
Satoshi 1,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2, |
| |
6 |
Growth of AlGaN/GaN-HEMT Structures on Si Substrate
by Ammonia MBE |
Nippon Inst. of Technol. 1,Epitec, Inc. 2@*Suzuki
Toshimasa 1,2,Kim Seong-Woo 1,Oishi Shota 1 |
| |
|
Break 10:30`10:45 |
|
| |
7 |
Effect of N2plasma-irradiation during rising temperature
process in hexagonal-InN growth on Si(111) by ECR-MBE |
Ele. Info. and Com. Eng.Osaka Inst. of Tech. 1,Applied.
Phys.Osaka Inst. of Tech. 2 @*Shimada Teruya 1,Tamoto Kiyonaga 1,Sasama
Shuuiti 1,Tateda Kazuhiro 1,
Harada Yoshiyuki 2,Yodo Tokuo 1
|
| |
8 |
Low temperature growth of GaN on non-nitride treated
Si substrate by ECR-plasma MBE |
Electronics, Information and Communication Eng.
Osaka Inst. of Tech. 1,Applied Phys.Osaka Inst. of Tech. 2@*Shiraishi Yuki
1,Fukuyama Takaaki 1,Futigami Hiroshi 1,Osaki Yuki 1,Sawa Takeru 1,Harada
Yoshiyuki 2,Yodo Tokuo 1 |
| |
9 |
Luminescence properties of n and p type GaPN |
Toyohashi University of Technology@*Sato Atsushi
1, Furukawa Yuzo 1, Wakahara Akihiro 1, Yonezu Hiro 1 |
| |
10 |
MBE growth of InxGa1-xP1-yNy
quantum well structure |
Toyohashi Univ. Tech. 1@Umeno Kazuyuki 1, Kim Sung
Man 1, *Furukawa Yuzo 1, Yonezu Hroo 1, Wakahara Akihiro 1 |
| |
11 |
MEE growth of GaP layer on Si for Si/III-V-N/Si
structure |
Toyohashi Univ.Tech. 1@Ishiji Seigi 1,Nakai Hiromitu
1,Yamane Keisuke 1,Furukawa Yuzo 1,Wakahara Akihiro 1,*Yonezu Hiroo 1 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 23 9:00`12:00 |
| 23a-ZQ-@/ I |
| |
1 |
Formation process of sharp tip-like structures
on GaN nanorods |
Osaka Univ. ISIR@M. Terayama, K. Uchida, S. Hasegawa,
M. Ishimaru, Y. Hirotsu, and H. Asahi |
| |
2 |
Fabrication of field emission devices using GaN
powder as electron emitters |
Tokyo Inst. of Tech. 1,Shizuoka Univ. 2@*Minakuchi
Yuichirou 1,Hara Kazuhiko 2 |
| |
3 |
Relation between N2 Gas Flow Ratio in AlN Sputtering
condition and Electric Characteristic of BAW resonator. |
Hitachi,Ltd.,Central Research Laboratory 1,@Asai
Kengo 1,Matsumoto Hisanori 1, |
| |
4 |
Highly Efficient Field Emission Characteristics
from Low-Temperature Grown Si-doped AlN Thin Films |
Kobe Univ.The Grad. School of Sci.& Tech. 1, Kobe
Univ. Fac. of Eng. 2@*Yoshiki Inou 1,Syunsuke Fujii 1,Takashi Kita 1,2,Osamu
Wada 1,2 |
| |
5 |
Fabrication of AlN thin-film phosphors by nitridation
of Al thin film - Nitridation process of Al thin film |
Tokyo Inst. Tech. 1, Shizuoka Univ. 2@*Hotta Shigeo
1, Hara Kazuhiko 2 |
| |
|
Break 10:15`10:30 |
|
| |
6 |
Synthesis of AlN fine crystalline particles by
vapor phase method |
Shizuoka Univ. 1, Tokyo Institute of Technology
2, Toyota Motor Corporation 3@Mori Tatsuhiro 1, Okamoto Naoya 2, Ogi Yuya
1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1, Mori Rentaro
3, Inaoka Hiroya 3 |
| |
7 |
Formation of a GaN layer on an AlN core particle
by vapor phase method |
Tokyo Inst. Tech. 1, Shizuoka Univ. 2, Toyota Motor
Corp. 3@*Naoya Okamoto 1, Yuya Ogi 2, Tatsuhiro Mori 2, Hiroko Kominami
2, Yoichiro Nakanishi 2, Kazuhiko Hara 2, Rentaro Mori 3, Hiroya Inaoka
3 |
| |
8 |
Electrical characteristics of Ni/n-GaN Schottky-diode
fabricated by electrodeposition |
Eng. Tokyo Metropolitan Univ. 1,Eng. Tokyo Metropolitan
Univ. 2@*Ona Tomoyuki 1,Nakamura Seiji 1,2,Suhara Michihiko 1,2,Okumura
tsugunori 1,2 |
| |
9 |
Anneal temperature dependence of contact resistance
of Mg-doped p-type InGaN |
Shonan Inst. of Technology 1,NTT BRL 2@@*Sogabe
Atsushi 1,Makimoto Toshiki 2,Kumakura Kazuhide 2,Matsumoto Nobuo 1 |
| |
10 |
Chemical sensor using AlGaN/GaN open-gate FET |
RCIQE 1, Hokkaido Univ. 2,@*Kokawa Takuya 1,2,
Sato Taketomo 1,2, Hasegawa Hideki 1,2, Hashizume Tamotsu 1,2 |
| |
11 |
AlGaN/GaN hydrogen gas sensors using Pd Schottky
contact |
Hokkaido Univ. 1, RCIQE 2@*Matsuo Kazushi 1,2,
Hasegawa Hideki 1,2, Hashizume Tamotsu 1,2 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 24 9:00`12:00 |
| 24a-ZF-@/ I |
| |
1 |
Bandgaps and their bowing parameters for lattice-matched
wurtzite InAlGaN quaternary alloy |
Matsushita Electric Industrial 1, Nagoya Inst.
of Tech.@*Toshiyuki Takizawa 1, Satoshi Nakazawa 1, Tetsuzo Ueda 1, Tsuyoshi
Tanaka 1, Takashi Egawa 2 |
| ’ |
2 |
High speed growth of AlGaN by high-temperature
MOVPE |
Fac. Sci. and Technol. 21st Century COE program
gNano-factoryh, Meijo University1, Showa Denko K.K.2, Ibiden Co. ,Ltd.3@Naofumi
Kato 1, Syuya Sato1 Takafumi Sumii 1, Naoki Fujimoto 1, Tsukasa Kitano 1,
Go Narita 1, Narihito Okada 1, Masataka Imura 1, Krishnan Balakrishnan 1,
Motoaki Iwaya 1,Satoshi Kamiyama 1, Hiroshi Amano 1, Isamu Akasaki 1, Akira
Bandoh 2, Kenji Shimono 3, Tadashi Noro 3, Takashi Takagi 3 |
| |
3 |
Improvement of efficiency in AlGaN-based UV-emitters
by reducing threading dislocations |
Meijo Univ. 1@Kazuyoshi Iida 1CTakeshi Kawashima
1, Motoaki Iwaya 1CSatoshi Kamiyama 1CHiroshi Amano 1, Isamu Akasaki 1 |
| |
4 |
Characterization of AlN with low dislocation density
grown by HT-MOVPE |
Meijo Univ. 1, Ibiden Co. Ltd. 2, Showa Denko K.K.
3@Imura Masataka 1, Kato Naofumi 1, Sato Shuya 1, Sumii Takafumi 1, Fujimoto
Naoki 1, Okada Narihito 1, Iwaya Motoaki 1, Kamiyama Satoshi 1, Amano Hiroshi
1, Akasaki Isamu 1, Krishnan Balakrishnan 1, Shimono Kenji 2, Takagi Takashi
2, Noro Tadashi 2, Bandoh Akira 3 |
| ’ |
5 |
Time resolved spectroscopy in a GaN/AlGaN MQW structure
grown on a (1-101) GaN |
Nagoya Univ.,Depat. of Electronics@*Kim Eunhee
1, Hikosaka Toshiki 1, Honda Yoshio 1, Yamaguchi Masahito 1, Sawaki Nobuhiko
1 |
| |
|
Break 10:15`10:30 |
|
| |
6 |
Excitons Luminescence Spectra and Time Resolved
Decay Curves of AlGaN Alloy |
Fukui Univ. 1,Kanazawa Univ. 2,Mie Univ. 3@*Nakagawa
Naoto 1,Fukui Kazutoshi 1,Naoe Syunichi 2,Miyake Hideto 3,Hiramatsu Kazumasa
3 |
| |
7 |
Recombination dynamics of localized biexcitons
in AlGaN ternary alloy epitaxial layers |
Yamaguchi Univ. 1@*Murotani Hideaki 1, Saito Takuya
1, Nakamura Kohzo 1, Yamada Yoichi 1, Taguchi Tsunemasa 1 |
| |
8 |
Polarized free-exciton emission from AlN |
NTT BRL 1@*Taniyasu Yoshitaka 1, Kasu Makoto 1,
Makimoto Toshiki 1 |
| |
9 |
Polarization Properties of a Single Self-assembled
Hexagonal GaN/AlN Quantum Dot |
IIS Univ. of Tokyo@*Satoshi Kako1, Yasuhiko Arakawa1 |
| |
10 |
The photoluminescense of AlGaN/AlGaN active layer |
Tokyo Inst. of Univ. 1, RIKEN 2,@*Kajitani Ryo
1, Takeuchi Misaichi 2,1, Aoyagi Yoshinobu, 1,2 |
| |
11 |
Observation of anisotropic PL-emission from the
AlGaN with high Al |
Kogakuin Univ. 1,@*Masanori Senuma 1, Takeaki Nukui
1, Eiichiro Niikura 1, Kouichi Murakawa 1, Hideo Kawanishi 1 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 24 9:00`11:30 |
| 24a-ZH-@/ I |
| |
1 |
Behavior of plasma-induced defects in n-GaN upon
reverse bias-anneal |
Tokyo Metropolitan Univ. 1,Tokyo Metropolitan Univ.
2@*Suda Masayuki 1,Nakamura Seiji 1,2,Suhara Michihiko 1,2,Okumura Tsugunori
1,2 |
| |
2 |
Deep levels in the subsurface region of n-GaN exposed
to hydrogen plasma |
Aichi Inst. 1,Tokyo Metropolitan Univ. 2,Tokyo
Metropolitan Univ. 3@Yoshida Kazuhiro 1,Matsuoka Youichi 1,*Tokuda Yutaka
1,Suda Masayuki 2,Nakamura Seiji 2,3,Suhara Michihiko 2,3,Okumura Tsugunori
2,3 |
| |
3 |
Annealing behavior of plasma-induced defects in
n-GaN upon ultraviolet illumination |
Tokyo Metropolitan Univ. 1,Tokyo Metropolitan Univ.
2@*Suda Masayuki 1,Nakamura Seiji 1,2,Suhara Michihiko 1,2,Okumura Tsugunori
1,2
|
| |
4 |
Activation Annealing of O+ implanted
GaN |
Dep. of Engineering Physics,Electronics and Mechanics
1,
Dep. of Electrical and Computer Engineering 2
Nagoya Inst. tech. @Yamamoto Youji 1, Iwata Yasuhiro 2, Abe Kouji 2, Eryu
Osamu 2 |
| |
5 |
Electrical properties of n-type formed in GaN by
Si+ ion implantation |
Hosei Univ.1@*Oshima Yasunori 1,Ozaki Daisuke 1,Ebihara
Jiro 1,Saito Tomohiro 1,Inada Taro 1 |
| |
|
Break 10:15`10:30 |
|
| |
6 |
Characterization of annealing effects on ICP etched
GaN by excess carrier lifetime measurements |
Nagoya Inst. of Tech. 1,Toyota Central R&D Labs.,Inc.
2@Fukushima Keisuke 1,Watanabe Hideki 1,Kato Masashi 1,Ichimura Masaya 1,Arai
Eisuke 1,Kanechika Masakazu 2,Ishiguro Osamu 2,Kachi Tetsu 2 |
| |
7 |
Conductance Frequency Spectroscopy of the p-GaN
layer of pn junction with highly doped Mg Acceptors II |
Tokyo University of Technology 1, Nichia Corp.
2@Zohta Yasuhito 1,*Yokoyama Akihiro 1,Mitani Tomotsugu 2,Mukai Takashi
2 |
| |
8 |
Characterization of deep levels in p-GaN etched
by ICP with I-DLTS |
Nagoya Inst. of Tech. 1, Toyota Central R&D Lab.,
Inc. 2@*Mikamo Kazuki 1, Kato Masashi 1, Ichimusa Masaya 1, Arai Eisuke
1, Kanechika Masakazu 2, Ishiguro Osamu 2, Kachi Tetsu 2 |
| |
9 |
Characterization of GaN grown homoepitaxially GaN
on GaN substrate by
DLTS |
Aichi Institute of Technology 1,Toyota Central
R&D Labs 2@*Tokuda Yutaka 1,Matsuoka Yoichi 1,Nakamura Wakana 1,Ueda Hiroyuki
2,
Soejima Narimasa 1,Ishiguro Osamu 2 |
| 13.4 III-V
Nitride Epitaxial Growth |
| Mar. 25 9:00`12:00 |
| 25a-C-@/ I |
| |
1 |
Growth and optical properties of homoepitaxial
AlN thin films grown by ammonia-source MBE |
Yamaguchi Univ. 1@Iwata Shiro 1, Nanjo Yoshiyuki
1, Okuno Toshihiro 1, Matsumura Kazuto 1, Kurai Satoshi 1, Taguchi Tsunemasa
1 |
| |
2 |
High-temperature NH3-MBE of AlN on the
GaN templates using low-temperature interlayer |
Univ. of Tsukuba 1, NICP/EATO-JST 2, UCSB 3@*Sugawara
Mariko 1, Koyama Takahiro 1,2, Kaeding J.F. 3, Sharma R. 3, Onuma Takeyoshi
1,2, Nakamura Shuji 2,3, and Chichibu Shigehusa 1,2 |
| |
3 |
Characterizations of mismatch in AlN films grown
on vicinal sapphire (0001) substrates |
AIST @Shen Xu-Qiang, Okumura Hajime |
| £ |
4 |
Roles of kinetics and energetics in the growth
of AlN by plasma-assisted molecular beam epitaxy |
Tohoku University@Institute of Material Research1,@Tohoku
University Center for Interdisciplinary Research2@*In Ho Im1, Tsutomu Minegishi1,Seog
Woo Lee 2, Takashi Hanada1, Meoung whan Cho1, Takafumi Yao1A2 |
| |
|
Break 10:00`10:15 |
|
| |
5 |
Selective MBE growth of GaN/AlGaN heterostructures
on patterned substrates for formation of embedded wire structures |
Res. Cent. for Integrated Quantum Electronics Hokkaido
Univ. 1, Grad. Sch. Information of Science and Technology Hokkaido Univ.
2@Taketomo Sato 1 2, Takeshi Oikawa 1 2, Hideki Hasegawa 1 |
| |
6 |
Role of atomic nitrogen in plasma-MBE growth of
Ga(Al)N |
Nagoya Univ. 1@Osaka Jiro 1, Muthusamy. Senthil.Kumar
1, Kanai Hidekazu 1, Ishijima Tatsuo 1, Toyoda Hirotaka 1, Sugai Hideo 1 |
| |
7 |
Narrowing of tilt angle and twist angle of AlN
epitaxial layer by (AlN/GaN)multi buffer layer structure |
Kohgakuin University @*Niikura Eiichiro 1.Murakawa
Kouiti 1.Nukui Takeaki 1.Senuma Masanori 1.Kawanishi Hideo 1 |
| |
8 |
Al0.17Ga0.83N films grown
on patterned sapphire substrates using a low-temperature intermediate layer
by MOCVD |
Faculty of Eng., Univ. of Tokushima 1@*Kazuhide
Sumiyoshi, Masashi Tsukihara, Tadashi Okimoto, Syuichi Kawamichi, Ken Kataoka,
Katsushi Nishino, Yoshiki Naoi, Shiro Sakai |
| |
9 |
Growth of inter layers for laser lift-off technique
for high Al-content AlGaN in deep UV emitters |
RIKEN 1, Tokyo Tech. 2@Takeuchi Misaichi 1,2, Kawasaki
Koji 2, Aoyagi Yoshinobu 2,1 |
| |
10 |
Effect of the TMI Flow on the Crystallinity of
MOCVD Grown AlN Thin Films |
Nippon Inst. of Tech.@* Kim Seong-Woo, Suzuki Toshimasa |
| |
11 |
Inversion domains in AlGaN films grown on patterned
sapphire substrate. |
Faculty of Eng., Univ. of Tokushima 1@Shuichi Kawamichi
1,*Katsushi Nishino 1,Kazuhide Sumiyoshi 1,Masashi Tsukihara 1,Shiro Sakai
1 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 25 9:00`17:30 |
| 25a-ZE-@/ I |
| |
1 |
Thickness dependence and visible lightening of
photo-catalysis effect in III-V nitride films |
Shizuoka Univ. 1, Tokyo Inst. of Tech.2, NIMS3,
JST-CREST4@M. Sumiya1,3,4, Y. Matsumoto2,4, T. Ohsawa2, K. Ohara2, Y. Kawai1,
S. Fuke1, and H. Koinuma3,4 |
| ’ |
2 |
H2 generation from water using n-type
GaN photocatalysis at zero bias |
Tokyo Univ. of Science 1,JST-ERATO 2@Ono Masato
1,Ito Takashi 1,Iwaki Yasuhiro 1,Hirako Akira 2,Fujii Katsushi 2,Ohkawa
Kazuhiro 1,2 |
| |
3 |
Series resistance of a GaN/AlGaN/Si structure grown
by MOVPE |
Nagoya Univ.@*Kato Satoshi 1,Honda Yoshio 1,Yamaguchi
Masahito 1,Sawaki Nobuhiko 1 |
| |
4 |
Current-voltage characteristics of semi-insulating
epitaxial GaN layers |
Tokyo Metropolitan Univ. 1,NTT Photonics Labs.
2@*Koichi Baba 1,Seiji Nakamura 1,Michihiko Suhara 1,Tsugunori Okumura 1,Kenji
Shiojima 2,Haruki Yokoyama 2 |
| ’ |
5 |
Critical electric fields of AlGaN-based vertical
conducting diodes |
NTT Basic Research Labs. 1@*Nishikawa Atsushi 1,
Kumakura Kazuhide 1, Akasaka Tetsuya 1, Makimoto Toshiki 1 |
| |
|
Break 10:15`10:30 |
|
| |
6 |
Fabrication and characterizations of HEMT structures
using AlN/GaN super-lattice by RF-MBE |
AIST PERC 1,Tokyo Univ of Science 2@*Yusuke Kawakami
1,2, Xu Qiang Shen 1,Guanxi Piao 1,Mitsuaki Shimizu 1, Hisayuki Nakanisi
2,Hajime Okumura 1 |
| |
7 |
Growth of high Al content AlGaN/GaN-HEMT structures
on vicinal substrates by rf-MBE |
FED 1, AIST PERC 2, Nihon Univ. 3@*Kei Furuta 1,
Nayuha Nakamura 2,3, Xu-Qiang Shen 2, Toshio Kitamura 2, Katsumitsu Nakamura
3, Hajime Okumura 2 |
| |
8 |
Electric property of AlGaN/GaN HEMT structures
grown on vicinal substrates by rf-MBE |
AIST PERC 1,FED 2,Nihon Univ. 3@*Nakamura Nayuha
1,3,Furuta Kei 2,Xu-Qiang Shen 1,Kitamura Toshio 1,Nakamura Kathumithu 3,Okumura
Hajime 1 |
| |
9 |
The effect of growth conditions on structure and
Mg-doping of GaN films grown by molecular beam epitaxy. |
NIMS@Yutaka AdachiCNaoki OhashiCIsao SakaguchiCSyunichi
HishitaCHajime Haneda |
| |
10 |
Low-temperature deposition of GaN films by CS-MBD
with re-evaporation enhancement technique |
Kogakuin Univ. 1@*Arai Masatoshi 1, Sugimoto Koichi
1, Egawa Shinichi 1, Baba Taichi 1, Sawada Masaru 1, Honda Tohru 1, Kawanishi
Hideo 1 |
| |
|
Lunch 11:45`13:00 |
|
| 25p-ZE-@/ I |
| £ |
1 |
In-situ chemical lift-off of GaN layers grown on
sapphire with single crystal ZnO buffer layers |
Tohoku University Center for Interdisciplinary
Research1,@Tohoku University@Institute of Material Research2@*Seog Woo Lee1,
Hiroki Goto1, Junichi Kinomoto1C Tsutomu Minegishi2CMeoung-whan Cho2CTakafumi
Yao1A2 |
| ’ |
2 |
Seeded growth of GaN crystals by the Na flux method
with Na vapor |
IMRAM Tohoku Univ. 1, CIR Tohoku Univ. 2, RICOH
Tohoku R&D Center 3@*Yamada Takahiro 1, Yamane Hisanori 2, Iwata Hirokazu
3, Sarayama Seiji 3 |
| |
3 |
Growth of GaN single crystals by GaH-VPE method |
Osaka Univ. 1@*Imade Mamoru 1, Kawamura Fumio 1,
Kawahara Minoru 1, Yoshimura Masashi 1, Mori Yusuke 1, Sasaki Takatomo 1 |
| |
4 |
Synthesis of GaN by using microwave plasma process |
Shizuoka Inst. Sci. and Tech. 1, Shizuoka Univ.
Res. Inst.Elect. 2@*Ozawa Tetsuo 1, Sasaki Makoto 1, Dohi Minoru 1, Hayakawa
Yasuhiro 2 |
| |
5 |
Characterization of 2-inch diameter GaN single
crystals grown by Li added Na-flux method |
NGK Insulators, LTD. 1,Toyoda Gosei Co.,LTD. 2,Osaka
Univ. 3@*Iwai Makoto 1,Shimodaira Takanao 1, Yamasaki Shirou 2,Imai Katsuhiro
1,Kawamura Fumio 3,Kawahara Minoru 3,Mori Yusuke 3, Sasaki Takatomo 3 |
| |
6 |
Fabrication of Fe-doped semi-insulating GaN wafers
by hydride vapor phase epitaxy using GaAs starting substrates |
Dept. Appl. Chem., Tokyo Univ. of Agri. & Tech.@*Yoshinao
Kumagai 1, Kikurou Takemoto 1, Hisashi Murakami 1, Akinori Koukitu 1 |
| |
7 |
Growth of HVPE GaN on c-sapphire with low crystalline
GaN layer |
CIR Tohoku Univ. 1, IMR Tohoku Univ. 2@*Hiroki
Goto 1, Seogwoo Lee 1, Junichi Kinomoto 1, Seontai Kim 1, Meoungwhan Cho
2, Takafumi Yao 12 |
| |
8 |
GaN crystal growth by ammonothermal method using
acidic mineralizer |
IMRAM Tohoku Univ. 1, Mitsubishi Chemical 2, Fukuda
Xftal Lab. 3@*Kagamitani Yuji 1, Kawabata Shinichiro 2, Yoshikawa Akira
1, Ehrentraut Dirk 1, Mikawa Yutaka 3, Fukuda Tsuguo 1 |
| |
|
Break 15:00`15:15 |
|
| |
9 |
Growth of GaN single crystals at relatively higher
temperature using Na flux method. |
Graduate School of Engineering Osaka University
1, Matsushita Electric Industrial Co. Ltd 2@Kawamura Fumio 1,Yamada Yuji
1,Morishita Masanori 1,Umeda Hidekazu 1,Kawahara Minoru 1,Gejo Ryohei 1,Y.Mori
1,Sasaki Takatomo 1,Kitaoka Yasuo 2,Minemoto Hisashi 2 |
| ’ |
10 |
Dislocation Reduction Mechanism in the LPE growth
of GaN single crystals using Na flux method. |
Graduate School of Eng., Osaka Univ. 1, Reserch
Center for Ultra-High Voltage Electron Microscopy, Osaka Univ. 2@*Umeda
Hidekazu 1, Kawahara Minoru 1, Kawamura Fumio 1, Yoshimura Masashi 1, Mori
Yusuke 1, Sasaki Takatomo 1, Okado Hideaki 2, Arakawa Kazuto 2, Mori Hirotaro
2 |
| |
11 |
A first-principles investigation of Ga - Na liquid
structure for understanding Na flux method |
Graduate School of Engineering 1, Institute of
Scientific and Industrial Research 2@Kawahara M 1,Kawamura F 1,Yoshimura
M 1,Mori Y 1,Sasaki T 1,Yanagisawa S 2,Morikawa Y 2 |
| |
12 |
Some examinations and modifications of Na flux
method for the growth of AlN |
Graduate School of Engineering,Osaka Univ. 1,NGK
Insulators, LTD. 2,TOYODA GOSEI CO., LTD. 3@*Bessho Masahiro 1,Arai Masaki
1,Kawahara Minoru 1,Kawamura Fumio 1,Yoshimura Masashi 1,Mori Yusuke 1,Sasaki
Takatomo 1,Iwai Makoto 2,Imai Katsuhiro 2,Yamasaki Shiro 3 |
| |
13 |
LPE growth of AlN single crystals in the Sn-Mg
flux for achievement of high growth rate. |
Graduate School of Eng., Osaka Univ. 1, NGK Insulators,
LTD. 2, TOYODA GOSEI CO., LTD 3@Arai Masaki 1, Bessho Masahiro 1, Kawahara
Minoru 1, Kawamura Fumio 1, Yoshimura Masashi 1, Mori Yusuke 1, Sasaki Takatomo
1, Iwai Makoto 2, Higashihara syuhei 2, Ichimura Mikiya 2, Imai Katsuhiro
2, Yamasaki Siro 3 |
| |
14 |
High-temperature growth of AlN film by Low-Pressure
HVPE |
Mie Univ. 1,NGK. 2@Tsujisawa Kenichi 1,Liu YuHuai
1,Miyake Hideto 1,Hiramatsu Kazumasa 1,Shibata Tomohiko 2,Tanaka Mitsuhiro
2 |
| |
15 |
Growth and characterization of AlN single crystal
by vapor phase epitaxy |
NGK Insulators 1@*Kobayashi Yoshimasa 1, Yamada
Naohito 1, Sakai Hiroaki 1 |
| |
16 |
LPE growth of AlN single crystal by using cold-crucible
under atmospheric nitrogen gas pressure |
Sumitomo Metal Ind. Ltd., Corporate R&D Labs. 1@*Tananaka
Tsutomu 1, Yashiro Nobuyoshi 1, Shirai Yoshihisa 1, Kamei Kazuhito 1, Yauchi
Akihiro 1 |
| |
17 |
Hydride vapor phase epitaxy of thick AlGaN ternary
alloy |
Tokyo Univ. of Agri. & Tech. 1@*Yamane Takayoshi
1, Akiyama Kazuhiro 1, Satoh Humitaka 1, Murakami Hisashi 1, Kumagai Yoshinao
1, Koukitu Akinori 1 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 25 9:00`12:45 |
| 25a-ZL-@/ I |
| |
1 |
Effect of steam plasma treatment on photoluminescence
of GaN-based semiconductor films |
Div. Indust. Innovation Sci. Grad. School Okayama
Univ. 1,Nitride Semicon. Res. Lab Nichia Co. 2@@*Kamiura Yoichi 1,Tamura
Jin 1,Ishiyama Takeshi 1,Yamashita Yoshifumi 1, Mitani Tomotsugu 2,Mukai
Takashi 2 |
| |
2 |
Pulsed-laser annealing of GaN |
Univ. of Tsukuba, Inst. of Applied Physics 1@*Saito
Daisuke 1,Hattori Toshiaki 1,Akimoto Katsuhiro 1,Sakurai Takeaki 1 |
| |
3 |
Epitaxial growth of GaN on (10-10)m-plane 6H-SiC
by low-pressure MO-VPE(decrease of yellow luminescence) |
Kogakuin Univ. 1@*Mao Yamamoto 1,Masanori Senuma
1,Eiichiro Niikura 1,Hideo Kawanishi 1 |
| |
4 |
Diffusion Process of Carriers around Dislocations
in GaN Epitaxial Films |
Dept. of Phys. Tokyo Tech 1, CREST-JST 2, Nichia
Corp 3@*Ino Naoyuki 1, Yamamoto Naoki 1,2, Mukai Takashi 3 |
| ’ |
5 |
In-plane optical anisotropy in semipolar {1122}
bulk garium nitride |
Dept. Elec. Sci. & Eng., Kyoto Univ. 1@*Kazunobu
Kojima1, Hiroaki Kamon1, Mitsuru Funato1, Yoichi Kawakami1 |
| |
6 |
Spatially-resolved cathodoluminescence study of
cubic GaN grown on (001)3C-SiC by MOVPE |
Univ. of Tsukuba 1, NICP/ERATO-JST 2@*Suzuki Tomonori
1, Nozaka Taiki 1, Yamaguchi Hiroshi 1, Onuma Takeyoshi 1,2, Chichibu F.
Shigefusa 1,2 |
| |
7 |
Spin relaxation of A-free excitons in high quality
bulk GaN |
Kyoto Univ. 1, Waseda Univ. 2@*Kuroda Takamasa
1, Kawakami Youichi 1, Tackeuchi Atsushi 2 |
| |
|
Break 10:45`11:00 |
|
| |
8 |
Theoretical Study on the Optical Properties of
Quantum Wells Formed by Alloy Semiconductors |
Wakayama Univ. 1@*Shinozuka Yuzo 1 |
| £ |
9 |
Efficient photoluminescence-emission from InGaN/GaN
quantum well thin film on Si substrate |
Tohoku Univ.@F. R. Hu, Y. Zhao, K. Ochi, K. Hane |
| |
10 |
Sharp PL Emissions from Localized Excitons in InGaN
Quantum Wells Grown on Sapphire Substrate |
NTT Basic Res. Labs. 1@*Hideki Gotoh 1, Tetsuya
Akasaka 1, Takehiko Tawara 1, Yasuyuki Kobayashi 1, Toshiki Makimoto 1,
Hidetoshi Nakano 1 |
| |
11 |
Multi-Colors emission from InGaN/GaN micro-facet
quantum wells |
Dept. Elec. Sci. & Eng. , Kyoto Univ. 1,Nichia
Corporation 2@*Kondou Takeshi 1,Ueda Masaya 1,Hayashi Keita 1,Funato Mitsuru
1,Narukawa Yukio 2,Mukai Takashi 2,Kawakami Youichi1 |
| |
12 |
SNOM-PL mapping in the vicinity of nonradiative
recombination centers of blue light emitting InGaN-based quantum wells |
Kyoto Univ. 1, Nichia Corp. 2@*Kaneta Akio 1, Funato
Mitsuru 1, Narukawa Yukio 2, Mukai Takashi 2, Kawakami Yoichi 1 |
| ’ |
13 |
Recombination dynamics in nonpolar (1-100) InxGa1-xN
/ GaN multiple quantum wells on LEO-GaN |
Univ. of Tsukuba 1, NICP/ERATO-JST 2, UCSB 3, Waseda
Univ. 4@*Onuma Takeyoshi 1,2, Chakraborty Arpan 3, Haskell A. Benjamin 2,3,
Koyama Takahiro 1,2, Fini T. Paul 2,3, Keller Stacia 3, DenBaars P. Steven
2,3, Speck S. James 2,3, Nakamura Shuji 2,3, Mishra K. Umesh 3, Sota Takayuki
4, Chichibu F. Shigefusa 1,2 |
| ’ |
14 |
Optical properties of nonpolar (1-100) InxGa1-xN
/ GaN light emitting diodes on free-standing GaN substrates |
Univ. of Tsukuba 1, NICP/ERATO-JST 2, UCSB 3, Waseda
Univ. 4@*Koyama Takahiro 1,2, Onuma Takeyoshi 1,2, Masui Hisashi 2,3, Chakraborty
Arpan 3, Haskell A. Benjamin 2,3, Mishra K. Umesh 3, Speck S. James 2,3,
Nakamura Shuji 2,3 DenBaars P. Steven 2,3, Sota Takayuki 4, Chichibu F.
Shigefusa 1,2 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 26 9:00`14:30 |
| 26a-ZE-@/ I |
| |
1 |
Nucleation of GaN on self-ordered SiC nanofacets |
RIES/Hokkaido Univ. 1@Miyamoto Tomoyuki 1, *Tanaka
Satoru 1, Suemune Ikuo 1 |
| |
2 |
Growth of GaN nanocolumns on (0001) 0.5off sapphire
substrate by rf-plasma assisted molecular beam epitaxy |
Sophia Univ. 1,CREST 2@*Sekiguchi Hiroto 1,Nakazato
Takuya 1,Kikuchi Akihiko 12,Kishino Katsumi 12 |
| |
3 |
Growth of InGaN/GaN micro-cavity nano-columns |
Sophia Univ. 1,CREST 2@*Nakazato Takuya 1,Sekiguchi
Hiroto 1,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2 |
| |
4 |
Optical properties of InGaN/GaN quantum wells on
single GaN nanocolumn |
Kyoto Univ. 1, Sophia Univ. 2, CREST, JST 3@*Suzuki
Sho 1, Kaneta Akio 1,3, Funato Mitsuru 1,3, Kawakami Yoichi 1,3, Kikuchi
Akihiko 2,3, Kishino Katsumi 2,3 |
| |
|
Break 10:00`10:15 |
|
| |
5 |
Realtionship between superconductivity and crystal
quality of InN |
Dept. Electronics, Tokai Univ. 1, Inst. Materials
Research, Tohoku Univ. 2@Inushima Takashi 1, Kato Naoto 1, Takenobu Taishi
2 |
| |
6 |
Characterization of in-plane inhomogeneities in
MOVPE InN films by SNOM |
University of Fukui 1@Nagai Yasuhiko 1, Miwa hiroshi
1, Gong XiaoDong 1, Hashimoto Akihiro 1, Yamamoto Akio 1 |
| |
7 |
Photoluminescence properties and SIMS analysis
for InN films grown irradiating Ga beam |
Fukui Univ. 1,Wakasa-wan Energy Research Center.
2@Kazuki Isamoto,Iwao kohsuke,Yamamoto Akio,Hashimoto Akihiro,Ito Yosihumi |
| |
8 |
Growth of InN layer by RF-MBE and characterizetion
of its electrical properties |
Hokkaido Inst. Tech.@*Kyosuke Ise 1,Kensuke Takahashi
1,Takayuki Sawada 1,Kazuaki Imai 1,Kazutaka Kitamori 1 |
| |
9 |
Study on the residual electron properties of InN |
Dept. of Eng. Chiba Univ. 1,
VBL Chiba Univ. 2,
JST-CREST 3@Ishitani Yoshihiro 1,2,3, Oohira Takashi 2, Fujiwara Masayuki
2, Wang Xinqian 3, Sonbek Che 1,2,3, Yoshikawa Akihiko 1,2,3 |
| |
10 |
Mg doping of MOVPE InN using CP2Mg (I) |
University of Fukui 1@*Nagai Yasuhiko 1, Niwa Hirokazu
1, Miwa Hiroshi 1, Hashimoto Akihiro 1, Yamamoto Akio 1 |
| |
11 |
Mg doping of MOVPE InN using CP2Mg (II)
|
University of Fukui 1@*Niwa Hirokazu 1, Nagai Yasuhiko
1, Miwa Hiroshi 1, Hashimoto Akihiro 1, Yamamoto Akio 1 |
| |
|
Lunch 12:00`13:00 |
|
| 26p-ZE-@/ I |
| |
1 |
Characterization of InGaN/InGaN quantum wells grown
on misoriented GaN substrates |
Corporate R&D Center Toshiba Corp.@*Nago Hajime
1,Tachibana Koichi 1,Nunoue Shinya 1 |
| |
2 |
RF-MBE growth of cubic InN (IV) |
Saitama Univ. 1, CREST, JST 2@Iwahashi Yohei 1,
Orihara Misao 1,2, Hijikata Yasuto 1,2, *Yaguchi Hiroyuki 1,2, Yoshida Sadafumi
1,2 |
| |
3 |
Characteristics of InN films grown on MgAl2O4
substrates by pulsed laser deposition |
The Univ. of Tokyo 1, The Univ. of Tokyo 2, KAST
3@*Mitamura Kazuya 1, Ohta Jitsuo 2,3, Fujioka Hiroshi 2,3, Oshima Masaharu
1 |
| |
4 |
Epitaxial growth of InN on LiNbO3 and
LiTaO3 substrates |
The Univ. of Tokyo 1,2, Kanagawa Academy of Science
and Technology 3@*Tsuchiya Yosuke 1, Kobayashi Atsushi 2, Ohta Jitsuo 2,3,
Fujioka Hiroshi 2,3, Oshima Masaharu 1 |
| ’ |
5 |
Artificial-Assembly of InN Nanodots on Nano-patterned
Substrates by ECR-MBE |
Dept.of Photonics1, Center for Promotion of the
COE Program 2, Ritsumeikan Univ.@Taihei Yamaguchi 1, Akihiro Tsuyuguchi
1, Kuniko Teraki 1, Yoriko Nakao 1, Tsutomu Araki 1, Hiroyuki Naoi 2, Yasushi
Nanishi 1, 2 |
| |
6 |
Selective growth of flower-like InN by specific
growth mechanisms |
Shizuoka Univ. 1,Soken Industries Comp. 2,Nitta
Haas Comp. 3@Wakasugi Satoshi 1,Takahashi Naoyuki 1,Nakamura Takato 1,Takemoto
Kikuro 12,Enomoto Keishi 2,Yasaku Osamu 2,Sugiura Haruka 12,Kato Hiroki
3,Shirai Katsuyuki 3 |
| 13.4
III-V Nitride Epitaxial Growth |
| Mar. 26 9:00`15:00 |
| 26a-ZF-@/ I |
| |
1 |
TEM Characterization at the first stage of the
growth process of MOVPE-grown N-polar GaN |
NTT-AT 1, Tohoku Univ. 2@*Mitate Toshitsugu 1,
Mizuno Seiichiro 1, Takahata Hiroko 1, Matsuoka Takashi 2 |
| |
2 |
First-principles study on initial growth kinetics
of GaN on GaN(001) |
Kyushu Univ. 1, Mie Univ. 2, Univ. Tsukuba 3@*Y.
Kangawa 1, T. Akiyama 2, T. Ito 2, K. Shiraishi 3, K. Kakimoto 1 |
| |
3 |
Growth Process of GaN Layer on a Template with
Dot-Mask: Effect of Shape of Dot-Mask |
Kyushu Univ. 1 2, Furukawa Co. Ltd. 3@Kuwano Noriyuki
1 2, Noguchi Satoko 2, Sunakawa Haruo 3, Ishihara Yujiro 3, Usui Akira 3 |
| |
4 |
Effect of low-temperature GaN buffer layer on the
crystalline quality of subsequent GaN layers |
Yamaguchi Univ. 1@*Yanagita Naoto 1, Araki Masahiro
1, Hoshino Katsuyuki 1, Tadatomo Kazuyuki 1 |
| ’ |
5 |
An Investigation of Thermal Conductivity of Nitride-Semiconductor
Nanostructures |
Kyushu Univ. 1, RIAM, Kyushu Univ. 2@*Takahiro
Kawamura 1, Yoshihiro Kangawa 2, Koichi Kakimoto 2 |
| |
|
Break 10:15`10:30 |
|
| ’ |
6 |
Growth mechanism of InGaN quantum structures on
microstructured GaN |
Dept. ESE Kyoto Univ 1, Nichia Corp. 2@*Ueda Masaya
1,Kondou Takeshi 1,Hayashi Keita 1,Funato Mitsuru 1,Narukawa Yukio 2,Mukai
Takashi 2,Kawakami Youichi 1 |
| |
7 |
Cathodoluminescence characterization of a-plane
InGaN/GaN films |
Tokyo Unv. of Science 1, JST ERATO 2@* Tokuma Furuzuki
1, Kazuhide Kusakabe 1, Kazuhiro Ohkawa 1,2 |
| ’ |
8 |
Characterization of a-plane GaInN/GaN heterostructure
on r-plane sapphire substrate |
Fac. Sci.&Tech.,21st COE "Nano-factory", Meijo
Univ.@*Aya Miura1, Daisuke Iida1, Akira Honshio1, Takeshi Kawashima1, Motoaki
Iwaya1, Satoshi Kamiyama1, Hiroshi Amano1 and Isamu Akasaki1 |
| |
9 |
Epitaxial lateral growth of m-plane Al0.18Ga0.82N |
Meijo Univ. 1@*Kawashima Takeshi 1, Iida Daisuke
1, Miura Aya 1, Okadome yosizane 1, Tsuchiya
Yousuke 1, Miyake Yasuto 1, Iwaya Motoaki 1, Kamiyama satoshi 1, Amano Hiroshi
1, Akasaki Isamu 1 |
| |
10 |
High quality a-GaN using AlInN-buffer layer and
ALE |
Univ. of Tokushima 1, Samsung Electro-Mechanics
2@Ikeda Kenji 1, Choi Rak-Jun 1, Fukumoto Tetsuya 1, Nishino Katsushi 1,
Naoi Yoshiki 1, Sakai Shiro 1, Lee Soo Min 2,Koike Masayoshi 2 |
| |
11 |
HRXRD structural characterization of MOVPE-grown
GaN films/r-plane sapphire |
Tokyo Univ. of Science 1,2, JST ERATO 3@*Kazuhide
Kusakabe 1, Shizutoshi Ando 2, Kazuhiro Ohkawa 1,3 |
| |
|
Lunch 12:00`13:00 |
|
| 26p-ZF-@/ I |
| |
1 |
Current distribution in GaN-based giant LEDs |
Tokyo Univ. of Science 1,JST-ERATO 2 @*Nishizawa
Shoichiro 1,Funazaki Soukichi 1,Hirakawa Manabu 1
,Okamoto Kuniyoshi 1,Kusakabe Kazuhide 1,Ohkawa Kazuhiro 1,2 |
| |
2 |
Investigation of high power UV-LED using quaternary
InAlGaN |
RIKEN 1, Matsushita Electric Works 2@*Takano Takayoshi
1 2, Fujikawa Sachie 1, Kondo Yukihiro 1 2, Hirayama Hideki 1 |
| |
3 |
Enhancement of GaN-LED light extraction efficiency
via surface light scattering |
Tokyo Univ. of Science 1, JST ERATO 2@*Funazaki
Soukichi 1, Okamoto Kuniyoshi 1, Nishizawa Shoichiro 1, Kusakabe Kazuhide
1, Ohkawa Kazuhiro 1,2 |
| |
4 |
Development of photocathode by utilizing the polar
structure of III-V nitride film |
Shizuoka Univ. 1, Hamamatsu Photonics2,@NIMS3,
@M. Sumiya1,3, T. Nihashi2, T. Kodama1, Y. Kamo1, H. Masuda1, T. Sato1,
M. Hagino2, and S. Fuke1 |
| |
5 |
Study on integrated GaN-based Schottky type light-emitting
diodes |
Kogakuin Univ. 1@Kobayashi Toshiaki 1,Egawa Shinich
1,Sawada Masaru 1,Honda Tohru 1,Kawanishi Hideo 1 |
| |
6 |
Fabrication of vertical deep-UV LED using laser
lift-off for AlGaN layered substrate with high Al compositions |
Tokyo Tech 1, RIKEN 2 @ Kawasaki Koji 1, Koike
Choshiro 1, Maegawa Tomohiro 1, Takeuchi Misaichi 1 2, Aoyagi Yoshinobu
1 2 |
| |
7 |
Fabrication of visible light-emitters exited by
amorphous GaN-based UV electroluminescent devices |
Kogakuin Univ.@Koichi Sugimoto1,Shinichi Egawa1,Masatoshi
Arai1,Tohru Honda1, Hideo Kawanishi1 |
| |
8 |
High Output Power GaN-based Blue Laser Diodes |
Nichia Co.Ltd. 1@*Miyoshi Takashi 1,Kozaki Tokuya
1,Yanamoto Tomoya 1,Fujimura Yasushi 1,Nagahama Shinichi 1,Mukai Takashi
1 |
| 13.5
Group-IV Crystals and IV-IV Alloys |
| Mar. 22 9:00`16:15 |
| 22a-ZE-@/ I |
| |
1 |
Delta doping in silicon I: new way with an usage
of bismuth atomic line |
NIMS 1, AIST 2, Univ. of Tokyo 3, PRESTO JST 4@Miki
Kazushi 1, Yagi Shuhei 1, Sakamoto Kunihiro 2, Fukatsu Susumu 3,4 |
| |
2 |
Delta doping in silicon II: co doping of bismuth
and erbium |
NIMS 1, Univ. of Tokyo 2, AIST 3, PRESTO JST 4@Yagi
Shuhei 1, Yasuhara Nozomu 2, Sakamoto Kunihiro 3, Fukatsu Susumu 2 4, Miki
Kazushi 1 |
| |
3 |
Observation of the Ge/Si(001) dots formation process
by in situ X-ray diffraction |
Tohoku Univ. 1, JASRI 2, Tohoku Univ. 3 @*Hanada
Takashi 1, Sumitani Kazushi 2, Sakata Osami 2, Buckmaster Ryan 1, Yao Takafumi
1, 3 |
| |
4 |
Formation of tensilely strained Si0.45Ge0.55
layers
by BF2 ions implantation |
Advanced Research Laboratories, Musashi Institute
of Technology@*Yasuhiro Abe 1, Yasuhiro Shiraki 1 |
| |
5 |
Characterization and control of strain relaxation
of Ge and SiGe patterned structures on Si(001) substrates |
Graduate School of Eng.,Nagoya Univ.@1,ESI, Nagoya
Univ.@2,Toshiba Ceramics Co., Ltd.@3,CCRAST, Nagoya Univ.@4@*Shogo Mochizuki
1,Katsunori Yukawa 1,Osamu Nakatsuka 2,Hiroki Kondo 1,Akira Sakai 1,Koji
Izunome 3,Takeshi Senda 3,Eiji Toyada 3,Masaki Ogawa 4,and Shigeaki Zaima
1 |
| |
6 |
Control of dislocation structures at the strain-relaxed
Ge/Si(001) interface with a thin Ge interlayer |
Graduate School of Eng.,Nagoya Univ.1,ESI,Nagoya
Univ.2,JASRI3,CREST-JST4,Toshiba Ceramics Co.,Ltd.5,CCRAST,Nagoya Univ.6@*Katsunori
Yukawa1,Shogo Mochizuki1,Osamu Nakatsuka2,Akira Sakai1,Shingo Takeda3,Shigeru
Kimura3,4,Osami Sakata3,Kazushi Sumitani3,Koji Izunome5,Takeshi Senda5,Eiji
Toyoda5,Masaki Ogawa6,and Shigeaki Zaima1 |
| |
|
Break 10:30`10:45 |
|
| |
7 |
Formation of ultra-smooth thin SiGe relaxed layers
by Ge ion implantation |
Adv. Res. Labo.,Musashi Inst. of Tech. 1, Univ.
of Yamanashi 2@*Fukumoto Atsushi 1, Sawano Kentaro 1, Hoshi Yusuke 1, Arimoto
Keisuke 2, Yamanaka Junji 2, Nakagawa Kiyokazu 2, Shiraki Yasuhiro 1 |
| |
8 |
Effects of Strain-Field Fluctuation in SiGe Virtual
Substrates on Surface Cleaning Process |
Musashi Inst. of Technology 1, IMR Tohoku Univ.
2, Univ. of Yamanashi 3@*Kentarou Sawano 1, Seiji Otake 1, Noritaka Usami
2, Keisuke Arimoto 3, Kiyokazu Nakagawa 3, Yasuhiro Shiraki 1 |
| |
9 |
Investigation of epitaxitial growth compositional
graded SiGe layer by Cathodeluminescence |
Keio Univ.@*Sumitomo Takamichi, Kita Haruki, Hirai
Mikiko, Matsumoto Satoru |
| |
10 |
Growth temperature dependence of strain-relaxation
mechanism of SiGe/Si(110) grown by gas source MBE |
Univ. of Yamanashi 1, IMR Tohoku Univ. 2, Musashi
Inst. of Technol. 3@*Keisuke Arimoto 1, Junji Yamanaka 1, Kiyokazu Nakagawa
1, Noritaka Usami 2, Kentarou Sawano 3, Yasuhiro Shiraki 3 |
| £ |
11 |
Electrical and optical characterization of strained
Si1-yCy film and its device applications |
Department of Physical Electronics, Tokyo Institute
of Technology 1,
Reserch Center for Quantum Effect Electronics, Tokyo Institute of Technology
2,@ J.S.Lim 1, H.Ishihara 1, M.Murano 1, A.Yamada 2, M.Konagai 1 |
| |
|
Lunch 12:00`13:00 |
|
| 22p-ZE-@/ I |
| |
1 |
Growth of Strain-Relaxed Si1-yCy
Films with Step Buffer Layers |
Hitachi reserch student 1,
Department of Physical Electornics,Tokyo Institute of Technology 2,
Reserch Center for Quantum Effect Electronics,Tokyo Institute of Technology
3,
@*Murata Takeshi 1, Murano Masahiko 2, Ishihara Hanae 2, Yamada Akira 3,
Konagai Makoto 2 |
| |
2 |
Suppression of structural imperfection in strained
Si thin film by utilizing SiGe bulk substrate |
IMR Tohoku Univ. 1@*Noritaka Usami 1, Yoshitaro
Nose 1, Gen Watari 1, Kentaro Kutsukake 1, Kozo Fujiwara 1, Kazuo Nakajima
1 |
| |
3 |
Crystallinity of supercritical thickness strained-Si/SiGe |
HITACHI CRL 1, Renesas East. Jpn. Semi.@*Kimura
Yoshinobu 1, Sugii Nobuyuki 1, Inui Kunio 2, Hirasawa Wataru 2, Kimura Shin'ichiro
1 |
| |
4 |
Measurement of strain of strained-Si with high-resolution
RBS |
Kobe Steel 1, Kobelco Res. Inst. 2, Meiji Univ.
3, Kyoto Univ. 4@*Ichihara Chikara 1, Kobayashi Akira 1, Mure Shouichi 1,
Fujikawa Kazuhisa 2, Sasakawa Kaoru 2, Ogura Atsushi 3, Kimura Kenji 4 |
| |
5 |
Dependence of Ge content on mobility in ion-implanted,strained-Si
layers on SiGe |
Hosei Univ. 1,Central Research Lab,Hitachi Ltd@*Koji
Koyama 1,Masahiro Nakajima 1,Kenta Tsukamoto 1,Yohei Ishidoya 1,Taro Inada
1,Nobuyuki Sugii 2 |
| |
6 |
Relaxation process in strained Si layers on SiGe-on-Insulator
wafers |
ASET-MIRAI 1, Toshiba Ceramics 2, AIST-MIRAI 3@Hirashita
Norio 1, Toyoda Eiji 2, Moriyama Yoshihiko 1, Sugiyama Naoharu 1, Takagi
Shin-ichi 3 |
| |
|
Break 14:30`14:45 |
|
| |
7 |
Growth of strain relaxed Si1-yCy
films on SOI substrates |
Department of Physical Electronics, Tokyo Institute
of Technology 1,
Reserch Center for Quantum Effect Electronics, Tokyo Institute of Technology
2@*Murano Masahiko 1,Ishihara Hanae 1,Yamada Akira 2,Konagai Makoto 1 |
| |
8 |
Formation of SGOI structures with low threading
dislocation density by two step oxidation and condensation method |
MIRAI-ASET 1, MIRAI-AIST 2, Univ. of Tokyo 3@Sugiyama
Naoharu 1, Nakaharai Syu 1, Hirashita Norio 1, Tezuka Tutomu 1, Moriyama
Yoshihiko 1, Usuda Koji 1, Takagi Shin-ichi 2,3 |
| |
9 |
Strain-relaxation of SiGe virtual substrate formed
by oxidation induced Ge condensation after hydrogen irradiation |
Kyushu Univ. 1, SUMCO 2, Fukuryo Semicon 3@Masanori
Tanaka 1, Taizoh Sadoh 1, Masaharu Ninomiya 2, Toyotsugu Enokida 3, Masanobu
Miyao 1 |
| |
10 |
Direct determination of Ge fraction in SGOI layers
using@anomalous x-ray diffraction |
NII Basic Research Labs., 1
Japan Synchrotron Radiat. Res. Inst., 2 @*Kawamura Tomoaki 1, Omi Hiroo
1, Kimura Shigeru 2, Takeda Shingo 2, Mizumaki Masaichiro 2 |
| |
11 |
Characterization of strained-SGOI layer relaxation
after mesa isolation with plane-NBD method |
MIRAI-ASET 1,MIRAI-ASRC AIST 2, The Univ. of Tokyo
3@*Koji Usuda 1,Toshinori Irisawa,Toshinori Numata 1,Norio Hirashita 1,
and Shin-ichi Takagi 2,3 |
| £ |
12 |
PL Evaluation of Defects Generated in SGOI Virtual
Substrate Fabrication: Temperature Ramping Process |
Art, Science and Technology Center for Cooperative
Research, Kyushu Univ. 1, Interdisciplinary Graduate School of Engineering
Sciences, Kyushu Univ. 2, SUMCO Corporation 3@Wang Dong 1, Takada Hideki
2, Ishikawa Yasuyuki 2, Matsumoto Koji 3, Nakamae Masahiko 3, Nakashima
Hiroshi 1 |
| 13.5
Group-IV Crystals and IV-IV Alloys |
| Mar. 23 9:30`12:00 |
| 23a-ZD-@/ I |
| ’ |
1 |
Hydrogen adsorption and desorption process on Si(011)
surface II |
CIR Tohoku Univ. 1,@*Kato Atsushi 1, Konno Atsushi
1, Narita Yuzuru 1, Suemitsu Maki 1, |
| ’ |
2 |
Strain control of SiGe layer deposited by Ion Beam
Sputtering toward strained Si |
Kanazawa Univ.@*Yamamoto Jun 1,Sakaguchi Yuta 1,Sasaki
Kimihiro 1 |
| ’ |
3 |
Growth and structural evaluation of strain-relaxed
Ge1-xSnx buffer layers on virtual Ge(001) substrates |
Graduate School of Eng., Nagoya Univ. 1,ESI, Nagoya
Univ. 2,CCRAST, Nagoya Univ. 3@Takeuchi Shotaro 1,Sakai Akira 1,Ymamoto
Koji 1,Nakatsuka Osamu 2,Ogawa Masaki 3,Zaima Shigeaki 1 |
| £’ |
4 |
Theoretical investigation of the growth mode of
Ge on Si by taking interdiffusion into account |
Tohoku Univ. IMR@*Alguno Arnold 1, Usami Noritaka
1, Nose Yoshitaro 1, Nakajima Kazuo 1 |
| |
|
Break 10:30`10:45 |
|
| ’ |
5 |
Evaluation of Electrical Properties of Non-doped
Relaxed SiGe |
Univ. of Yamanashi 1,Tohoku Univ. 2,Musashi Inst.
of Technology 3@*Motoki Sato 1,Keisuke Arimoto 1,Junji Yamanaka 1,Kiyokazu
Nakagawa 1,Noritaka Usami 2,Kentarou Sawano 3,Yasuhiro Shiraki 3 |
| ’ |
6 |
Photoluminescence Mapping of strained Si Wafers |
ISAS/JAXA 1,Univ. of Tokyo 2,Toshiba Ceramics 3@*Yashiro
Yoshimune 1,2,Tajima Michio 1,2,Senda Takeshi 3,Motousu Masachika 3,Izunome
Koji 3 |
| ’ |
7 |
Saturation Mechanism of Ge Condensation during
Oxidation of SGOI Structure |
Osaka Univ. 1,@*Shimizu Michihiro 1, Horiuchi Shinnichiro
1, Shimura Takayoshi 1, Watanabe Heiji 1, Yasutake Kiyoshi 1, |
| ’ |
8 |
Generation of Defects in Ge-on-Insulator(GOI) Layer
in Ge-condensation Process |
MIRAI-ASET 1, Toshiba Ceramics 2, MIRAI-AIST 3,
Univ. of Tokyo 4@*Shu Nakaharai 1, Tsutomu Tezuka 1, Norio Hirashita 1,
Eiji Toyoda 2, Yoshihiko Moriyama 1, Naoharu Sugiyama 1, Shin-ichi Takagi
3,4
|
| ’ |
9 |
Surface cleaning of GOI and SGOI substrates for
Ge epitaxy |
MIRAI-ASET 1, Toshiba Ceramics 2, MIRAI-AIST 3,
Univ. of Tokyo 4,@*Moriyama Yoshihiko 1, Hirashita Norio 1, Toyoda Eiji
2, Usuda koji 1, Nakaharai shu 1, Sugiyama Naoharu 1, Takagi Sin-ichi 3,4 |
| 13.6
Group-IV Compounds |
| Mar. 23 |
| 23p-ZQ-@/ I |
| |
|
Short Presentation
(5min.) 13:00`14:20
23p-ZQ-1`16@Poster Session 15:30`17:30 |
|
| ’ |
1 |
Growth kinetics of 3C-SiC on Si (011) using organosilane |
CIR, Tohoku Univ.@*Atsushi Konno 1, Yuzuru Narita
1, Maki Suemitsu 1 |
| |
2 |
Suppression of Boundary Undulation between 3C-SiC
and SiO2 by Nitrogen-Ion Implantation |
Osaka Prefecture Univ. 1,Nagoya Inst. of Technology
2,Air Water Inc. 3@*Oouchi Kzuhiro 1,Abe Koji 2,Nakao Motoi 1,Yokoyama Takashi
3,Eryu Osamu 2,Kobayashi Sumio 3,Izumi Katsutoshi 1 |
| |
3 |
Epitaxial growth of cubic SiC on SOI substrate
using Hot-Mesh CVD method. |
Nagaoka Univ. of Technology.@*Miura Hitoshi 1,Kurimoto
Taishi 1,Kuroki Yuichiro 1,Yasui Kanji 1,Takata Masasuke 1,Akahane Tadashi
1 |
| |
4 |
Development of high quality c-plane SiC substrates
on 4H-SiC {03-38} seeds |
Sixon Ltd. 1,Kyoto Univ. 2@Furusho Tomoaki 1,Kobayashi
Ryouhei 1,Sasaki Makoto 1,Nishiguchi Taro 1,*Kinoshita Hiroyuki 1,Shiomi
Hiromu 1,Kimoto Tsunenobu 2 |
| ’ |
5 |
Development of SiC epitaxial reactor for large
diameter and high-rate growth |
CRIEPI 1@*Masahiko Ito 1, Hidekazu Tsuchida 1 |
| |
6 |
Epitaxial growth of SiC by the use of monomethylsilane |
NAIST@Hatayama Tomoaki, Yano Hiroshi, Uraoka Yukiharu,
Fuyuki Takashi |
| |
7 |
Catalyst Assisted and Referred Etching of Silicon
Carbide |
Osaka Univ. 1@Hara Hideyuki 1, Sano Yasuhisa 1,
Mimura Hidekazu 1, Yamauchi Kazuto 1 |
| |
8 |
4H Silicon Carbide Etch Rate Using Chlorine Trifluoride
Gas |
Yokohama National Univ. 1,Kanto Denka Kogyo 2,AIST
3@*Habuka Hitoshi 1,Katsumi Yusuke 1,Fukai Yasushi 2,Fukae Katsuya 2, Kato
Tomohisa 3,Okumura Hajime 3,Arai Kazuo 3 |
| ’ |
9 |
Surface Treatment for Silicon Carbide by Atmospheric
Pressure Hydrogen Plasma using Porus Carbon Electrode |
Osaka Univ. 1@*Okada Shigenari 1,Nakamura Ryouta
1,Ohmi Hiromasa 1,Kakiuchi Hiroaki 1,Watanabe Heiji 1,Yasutake Kiyoshi 1 |
| |
10 |
Charactarization of 4H-SiC MOS Capacitors with
AlON/SiO2 Layered Structures for Gate Dielectrics |
Osaka Univ.@1@*Okada Shigenari 1,Yoshida Daisuke
1,Shimura Takayoshi 1,Watanabe Heiji 1,Yautake Kiyoshi 1 |
| |
11 |
Raman Scattering Analyses of Stacking Faults Induced
by Thermal Processing of Highly Nitrogen-Doped 4H-SiC |
AIST 1@*Takeshi Mitani 1, Shin-ichi Nakashima 1,
Tomohisa Kato 1, Hajime Okumura 1 |
| |
12 |
Observation of Surface Phonons in SiC by Deep UV
Raman Spectroscopy |
AIST 1, Univ. Tokushima 2, Kyoto Inst. Tech. 3@Shin-ichi
Nakashima 1, Takeshi Mitani 1, Takuro Tomita 2, Tomohisa Kato 1, Shin-ichi
Nishizawa 1, Hajime Okumura 1, Hiroshi Harima 3 |
| ’ |
13 |
Numerical calculations of the Raman spectrum for
SiC surface phonons by DUV excitation |
The Univ. of Tokushima 1, AIST 2@*Tomita Takuro
1, Mitani Takeshi 2, Nakashima Shin-ichi 2 |
| ’ |
14 |
Observation of Stacking Faults in SiC Epitaxial
Wafers by Room-Temperature Photoluminescence |
ISAS/JAXA 1,Tokyo Univ. 2,SiXON 3@*Hoshino Norihiro
1,2,Higashi Eikou 1CTajima Michio 1,2CHayashi Toshihiko 3CNishiguchi Taro
3CKinoshita Hiroyuki 3CShiomi Hiroshi3 |
| ’ |
15 |
Deep Level Transient Spectroscopy on As-Grown and
Electron-Irradiated P-Type 4H-SiC Epitaxial Layers |
Kyoto Univ. 1@*Danno Katsunori 1, Kimoto Tsunenobu
1 |
| |
16 |
Temperature dependence of excess carrier decay
curve for p-type SiC measured by the Κ-PCD method |
Nagoya Inst. of Tech. 1@Masahiko Kawai 1. Masasi
kato 1. Masaya Ichimura 1. Eisuke Arai 1 |
| 13.6
Group-IV Compounds |
| Mar. 24 |
| 24a-ZP-@/ I |
| |
|
Short Presentation (5min.) 9:00`10:45
24a-ZP-1`21@Poster Session 15:30`17:30 |
|
| ’ |
1 |
Annealing effects on optical properties of N- and
B-doped 6H-SiC |
Fac.Sci.and Technol Meijo Univ 1,Kyoto Institute
of Technology 2,SiXON 3@*Yoko Shibata 1,Nakamura Yoshihiro 1,Maeda Tomohiko
1,Murata Satoshi 1,Ikuta Mina 1,Sugiura Masaaki 1,Nitta Syougo 1,Iwaya Motoaki
1,Kamiyama Satoshi 1,Amano Hiroshi 1 |
| |
2 |
Dose Dependence of Electrical Properties in N implanted
3C-SiC(100) |
I.B.Tech,Hosei Univ.@Etsushi Taguchi 1, Yao Noriaki
1, Satoh Masataka 1 |
| |
3 |
Evaluation of Electrical Properties for P Implanted
4H-SiC(0001) at Room Temperature |
I.B.Tech. Hosei Univ. 1 @*Kudoh Takahiro 1,Miyagawa
Shingo 1,Suzuki Tomoyuki 1,Satoh Masataka 1 |
| |
4 |
Encapsulated Annealing of N+-Implanted
4H-SiC With DLC Film |
I.B.Tech,Hosei Univ.@*Miyagawa Shingo, Suzuki Tomoyuki,
Satoh Masataka |
| |
5 |
Fabrication and evaluation of 4H-SiC epitaxial
pn diodes |
NAIST@Takenami Susumu,Hatayama Tomoaki,Yano Hiroshi,Uraoka
Yukiharu,Fuyuki Takasi |
| |
6 |
Generation of amorphous SiO2/SiC interface
structure by the first-principles |
JAEA 1, CRIEPI 2@*Miyashita Atsumi 1, Ohnuma Toshiharu
2, Iwasawa Misako 2, Yoshikawa Masahito 1, Tsuchida Hidekazu 2 |
| |
7 |
First-principles molecular dynamics study of SiO2/4H-SiC(0001)
interface oxidation process |
CRIEPI 1, JAEA 2@*Toshiharu Ohnuma 1, Atumi Miyashita
2, Misako Iwasawa 1, Masahito Yoshikawa 2, Tomonori Nakamura 1, Hidekazu
Tsuchida 1 |
| |
8 |
Characterization of ion beam-induced SiC-OI structures
proved by positron annihilation spectroscopy |
Japan Atomic Energy Agency 1@Maekawa Masaki 1,
Kawasuso Atsuo 1 |
| |
9 |
Real time observation of SiC oxidation using in-situ
spectroscopic ellipsometer |
Saitama Univ. 1@*Kakubari Koichi 1, Kuboki Ryoichi
1, Yamamoto Takeshi 1, Yaguchi Hiroyuki 1, Yoshida Sadafumi 1 |
| |
10 |
Characterization of SiO2/4H-SiC Interface
Annealed in High-Pressure H2O Vapor |
NAIST 1@Takeda Daisuke 1,*Yano Hiroshi 1, Hatayama
Tomoaki 1,Uraoka Yukiharu 1,Fuyuki Takashi 1 |
| |
11 |
Electric properties for BCN/SiC MIS structure with
annealing |
Osaka Univ. 1@*Kurimoto Hirofumi 1,Shibata Kaoru
1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino Takashi 1 |
| |
12 |
Reliability of thermal oxides on n-type 4H-SiC(000-1)
substrates |
AIST 1@Junji Senzaki 1, Atsuhsi Shimozato 1, Kazutoshi
Kojima 1, Kenji Fukuda 1 |
| |
13 |
Acceleration factors in acceleration life test
of 4H-SiC thermal oxides |
AIST 1@Junji Senzaki 1, Atsushi Shimozato 1, Kenji
Fukuda 1 |
| |
14 |
Examination of dislocation evaluation method in
4H-SiC(C-face) using dry etching |
AIST 1@*Shimozato Atsushi 1,Senzaki Junji 1,Kuroda
Satoshi 1,Kojima Kazutoshi 1,Kenji Fukuda 1 |
| |
15 |
Field and temperature acceleration of TDDB for
ONO gate-dielectric on 4H-SiC |
Nissan Motor NRC 1@*Satoshi Tanimoto 1, Shigeharu
Yamagami 1, Hedeaki Tanaka 1, Tetsuya Hayashi 1, Yoshio Shimoida 1, Masakatsu
Hoshi 1 and Tadashi Suzuki 1 |
| |
16 |
Evolution of Ni thermal stress in Ni/SiC during
thermal cycle |
Dept. of Materials science, Tohoku University.
@*Terui@kenichiro 1, Yoshizaki hiroshi 2, Yamazaki yoshihiro 1, Koike junichi
1 |
| ’ |
17 |
Characterization of 4H-SiC MOSFET formed channel
on surface with macro steps |
Sumitomo Electric Ind. 1, Kyoto Univ. 2@Masuda
Takeyoshi 1, Harada Shin 1, Matsukawa Shinji 1, Namikawa Yasuo 1, Kimoto
Tsunenobu 2 |
| |
18 |
Characterization of 4H-SiC MOSFET formed on trench
side wall using low off-angle substrares |
NAIST 1@Nakao Hiroshi 1, *Yano Hiroshi 1, Hatayama
Tomoaki 1, Uraoka Yukiharu 1, Fuyuki Takashi 1 |
| |
19 |
Low-loss lateral SiC MOSFETs with double RESURF
structure |
Kyoto University 1@Noborio Masato 1, Suda Jun 1,
Kimoto Tsunenobu 1 |
| |
20 |
Electrical characterization of miniaturized 4H-SiC
epilayer channel MOSFETs |
Advd, Tech. R&D Ctr., Mitsubishi Electric Corp.
1@*Miura Naruhisa 1, Keiko Fujihira 1, Nakao Yukiyasu 1, Watanabe Tomokatsu
1, Tarui Yoichiro 1, Imaizumi Masayuki 1, Oomori Tatsuo 1 |
| |
21 |
C-face IEMOSFET with high inversion-channel mobility |
AIST@Shinsuke Harada, Makoto Kato, Takahiro Mogi,
Mitsuo Okamoto, Tsutomu Yatsuo, Kenji Fukuda, Kazuo Arai |
| 13.7
Epitaxial Growth Fundamentals |
| Mar. 22 13:30`17:45 |
| 22p-Q-@/ I |
| |
3 |
in situ STM observation of InAs quantum
dot MBE growth on GaAs(001) at high temperature |
Univ. Tokyo, IIS, NCRC 1, Mitsubishi elec. 2@*Honma
Tsuyoshi 1,2, Tsukamoto Shirou 1, Arakawa Yasuhiko 1 |
| |
4 |
Incident electron energy dependence of surface
morphology and surface electronic states of Zn crystals |
Kagoshima Univ.1@*Oiwane Yutaka 1,Taniguchi Masatoshi
1,Uchino Yuki 1,Yamaguchi Mitsuomi 1,Obara Kozo 1 |
| |
5 |
Effects of Ge doping on the epitaxial lateral overgrown
InGaP/InP |
Faculty of Science & Technology Keio Univ. 1@Kenichi
Higuchi 1, Takeshi Fujita 1, Kenji Toba 1, Shinichi Takahashi 1 |
| |
6 |
Hetero-growth of MnAs on GaAs(001) by atomic layer
epitaxy |
Miyazaki Univ.@*Haraguchi Tomohiro 1,Higuchi Kenjirou
1,Fujita Akira 1,Maeda Kouji 1,Ozeki Masashi 1 |
| |
7 |
Calculation of InN growth rate on vapor deposition
by computational thermal fluid analysis |
Shizuoka Univ. 1@Wakasugi Satoshi 1,Takahashi Naoyuki
1,Nakamura Takato 1 |
| |
8 |
Organic catalytic CVD, A new type of thin-film
growth method which enables material synthesis in vapor phase
|
Material Design Factory 1, Osaka City Univ. 2@*Nakayama
Hiroshi 1,2, Hata Tsuyoshi 1,2 |
| |
9 |
Initial film growth process on a hydrogen buffer
layer in a highly mismatched system |
JAEA 1CEiko 2@*Hidehito Asaoka 1, Tatsuya Yamazaki
1,2, Shin-ichi Shamoto 1 |
| |
|
Break 15:15`15:30 |
|
| |
10 |
Study for epitaxial growth of ZnO(0001) using the
first-principles calculation and kinetics Monte Carlo method |
Tottori Univ. 1, RIKEN 2@*Fujiwara Katsutoshi 1,
Ishii Akira 1, Abe Tomoki 1, Ando Koshi 1, Ebisuzaki Toshikazu 2 |
| |
11 |
A simple approach to temperature dependence of
strain energy in thin films |
Mie Univ. 1@*Ito Tomonori 1, Araki Tatsuya 1, Akiyama
Toru 1, Nakamura Kohji 1 |
| |
12 |
Study for growth mechanism of GaN on ZnO(000-1)
substrate |
Tottori Univ. 1, Univ. of Tokyo 2, AIST 3, KAST
4@*Fujiwara Katsutoshi 1, Ishii Akira 1,3, Kobayashi Atsushi 2, Yuji Kawaguchi
2, Ohta Jitsuo 2,4, Fujioka Hiroshi 2,4 |
| |
13 |
A study of Asqsubr4q/subrincorporation kinetics
during conventional MBE growth of GaAs |
Kwansei Gakuin Univ.@*Matsuda Kazuhiro 1, Miyazaki
Kenichi 1,Sano Naokatsu 1, Kaneko Tadaaki 1 |
| |
14 |
Ga-Rich Surface Structures of GaAs(001)-(4x6) and
(6x6) |
NIMS 1, Charles Univ. 2, Friedrich-Schiller Univ.
3@*Ohtake Akihiro 1, Kocan Pavel 2, Seino Kaori 3, Schmidt G Wolf 3, Koguchi
Nobuyuki 1 |
| |
15 |
RHEED Observation of Atomically Controlled Nitridation
of GaAs(001) Surface |
Grad. School of Sci.&Tech.,Kobe Univ. 1, Fac. of
Eng.,Kobe Univ. 2@*Shimizu Norihiko 1,Matsushita Kazuyuki 1,Kita Takashi
1,2,Wada Osamu 1,2 |
| ’ |
16 |
In-situ STM observation of InAs quantum
dot MBE growth on Sb irradiated GaAs(001) surface |
Univ.Tokyo, IIS, NCRC 1, Univ.Electro-commun. 2,
Nippon Inst.Tech. 3
@*Kakuda Naoki 1,2, Tsukamoto Shiro 1, Nagahara Seiji 1, Isomura Nobuhiro
1,3, Yamaguchi Koichi 2, Arakawa Yasuhiko 1 |
| |
17 |
Study for epitaxial growth of GaSb growth on GaAs(001)
substrate |
Tottori Univ. 1, RIKEN 2@*Akira Ishii 1, Katsutoshi
Fujiwara 1, Toshikazu Ebisuzaki 2 |
| ’ |
18 |
Investigation on GaAs (001) surface treated by
As-free high temperature surface cleaning method |
Univ.Tokyo,IIS,NCRC 1, NIT 2, Univ. Electro-commun.
3@*Isomura Nobuhiro 1,2 Tsukamoto Shirou 1 Nagahara Seiji 1 Kakuda Naoki
1,3 Iizuka Kanji 2 Arakawa Yasuhiko 1 |
| 13.8
Nano-impurities and defects |
| Mar. 22 9:00`17:45 |
| 22a-ZB-@/ I |
| |
1 |
Raman scattering measurements of B-doped silicon
nanowires synthesized by laser ablation |
Inst. of Appl. Phys., Univ. of Tsukuba 1,NIMS 2,S.R.P.
Nano Sci., Univ. of Tsukuba 3@Okada Naoya 1,Fukata Naoki 2,3,Oshima Takashi
1,Chen Jun 2,Sekiguchi Takashi 2,Murakami Kouichi 1,3 |
| |
2 |
Phosphorus doping in Si Nanowires Synthesized by
Laser Ablation |
NIMS1, Inst. of Appl. Phys. Univ. of Tsukuba 2,
S.R.P. Nano Sci.3, IMR Tohoku Univ.4@*Naoki Fukata1,3, Takashi Oshima2,
Naoya Okada2, Satoshi Matsushita2, Takao Tsurui4, Shun Ito4, Noriyuki Uchida2,3,
Kouichi Murakami2,3 |
| |
3 |
Electronic Structures of Semiconductor Clusters
with Point Defects (15) |
Kwansei Gakuin Univ.1@Higashiguchi Yoshitsune 1,*
Ohmori Kengo 1,Kawanishi Hiroyuki 1,Hayafuji Yoshinori 1 |
| |
4 |
Observation of vacancy in FZ silicon using low-temperature
ultrasonic measurements |
Graduate School of Science and Technology,Niigata
Univ. 1,Atsugi Laboratories,Fujitsu Ltd. 2,Research Institute for Applied
Mechanics,Kyushu Univ. 3,Center for Low Temperature Science,Tohoku Univ.
4@*Terutaka Goto 1,Hirosi Yamada-Kaneta 2,Yasuhiro Saito 1,Yuiti Nemoto
1,Koji Sato 1,Koiti Kakimoto 3,Sintaro Nakamura 4 |
| |
5 |
Observation of vacancy in CZ silicon using low-temperature
ultrasonic measurements |
Fujitsu Laboratories Ltd 1,@
Graduate School of Science and Technology, Niigata Univ. 2,
Research Institute for Applied Mechanics, Kyushu Univ. 3,
Center for Low Temperature Science, Tohoku Univ. 4 @Yamada-Kaneta Hiroshi
1, Goto Terutaka 2, Saito Yasuhiro 2, Nemoto Yuichi 2, Sato Koji 2, Kakimoto
Koichi 3, Nakamura Shintaro 4 |
| |
6 |
Photocapacitometry analysis of dislocation-related
deep levels in InP ELO layers |
Tohoku Univ. 1, Semiconductor Research Inst. 2@*Kimura
Toshihiro 1, Sugai Maki 1, Oyama Yutaka 1, Tanno Takenori 2, Nishizawa Junichi
2 |
| |
|
Break 10:30`10:45 |
|
| ’ |
7 |
Analysis of Light Element Impurities in Ultrathin
SOI Wafers by Luminescence Activation Using Xe Ion Implantation |
ISAS/JAXA 1, Soken Univ. 2, JAEA 3@*Nakagawa Satoko
1,2, Sone Yoshitsugu 1,2, Tajima Michio 1, Ohshima Takeshi 3, Itoh Hisayoshi
3 |
| |
8 |
First-principles molecular dynamics simulation
of IR excitation of impurity vibrations in silicon (III) |
ISIR, Osaka University@Koun Shirai and Hirhoshi
Katayama-Yoshida |
| |
9 |
Infrared absorption measurement of nitrogen doped
Cz-Si(XVI) Baseline Procedure |
RIAST, Osaka Pref. Univ.1, JEITA 2@* N. Inoue 1,2,
M. Nakatsu 1 |
| |
10 |
Formation and annihilation processes of shallow
thermal donors in nitrogen-doped CZ-Si |
JFCC 1@*Ono Haruhiko 1 |
| |
11 |
The influence of residual impurities on electrical
property in GaAsN thin films grown by CBE |
Toyota Tech. Inst.@*Takahiro Imai, Hae-Seok Lee,
Kenichi Nishimura, Hidetoshi Suzuki, Tetsuya Kawahigashi, Yoshio Ohshita,
Masafumi Yamaguchi
|
| |
|
Lunch 12:00`13:00 |
|
| 22p-ZB-@/ I |
| |
1 |
Decision of Si crystal potential with ab initio
calculation |
Okayama Pref. Univ.@*Kabasawa Tomoyuki 1, Shiba
Seiji 1,Sueoka Kouji 1,Fukutani Seishiro 1 |
| ’ |
2 |
Analysis on the deformation of Si crystal and Si
nanoscale thin film with ab initio calculations |
Okayama Pref. Univ. 1@*Ono Akira 1, Shiba Seiji
1, Sueoka Koji 1, Fukutani Seishiro 1 |
| |
3 |
Photoelastic characterization of residual strains
on cast-grown multicrystalline-silicon substrates |
Kyoto Inst. of Tech. Department of Elec. Info.
Scie. 1@*Hirofumi Maeda 1,Hajime Sato 1,Masayuki Fukuzawa 1,Masayoshi Yamada
1 |
| |
4 |
Observation of Destructive Mechanoluminescene of
Microparticles by Atomic Force Microscopy |
AIST Kyusyu 1@Maehara Shouko1, *Sakai Kazufumi
1, Koga Toshiaki 1, Imai Yusuke 1, Xu Chao-Nan 1 |
| |
5 |
Quantitative analysis of strain in silicon crystals
using X-ray dynamical diffraction (2) |
Daido Inst. Tech. 1@*Saka Takashi 1 |
| £ |
6 |
Effect of InSb buffer layer on the quality of InAsSb
epilayer on GaAs (001) substrates |
RIE Shizuoka Univ. 1@Pachamuthu Jayavel 1, Shinngo
Nakamura 1, Tadanobu Koyama 1, *Yasuhiro Hayakawa 1 |
| |
7 |
Depth-resolved structure analysis of GaN epitaxial
layer on GaAs substrate by In-Plane measurement |
Kyushu Inst. Tech. 1@Ohsugi Yoshiteru 1,Sakamoto
Yukari 1,Suzuki Yoshifumi 1,Chikaura Yoshinori 1 |
| |
8 |
Surface structure observation of silicon carbide
(SiC) on silicon-microfabricated substrate using AFM and In-Plane diffraction |
Kyushu Inst. Tech. 1@Yamashita Masashi 1,Ohsugi
Yoshiteru 1,Sun Yong 1,Suzuki Yoshifumi 1,Chikaura Yoshinori 1, |
| |
9 |
HRTEM study of structures of ΐ-FeSi2nanodots grown
on faintly oxidized Si(111) Surfaces |
Nagoya Univ. ESI1, CREST-JST2, Tokyo Univ.3 @ *
S. P. Cho 1,2, Y. Nakamura 2,3, N. Tanaka 1,2 and M. Ichikawa 2,3 |
| |
|
Break 15:15`15:30 |
|
| |
10 |
Annihilation of hydrogen-acceptor pairs in Si due
to electron-irradiation |
Yokohama City Univ. 1@Suezawa Masashi 1, Kojima
Ken-ichi 1 |
| |
11 |
Pulse Width Dependence of DLTS Signals for Metastable
Defects Observed in Hydrogen-Implanted n-Type Silicon |
Aichi Institute of Technology.1, Kumamoto National
College of Technology.2@Terashima Hiroshi 1, *Tokuda Yutaka 1, Kudo Tomohiro
2, Ohyama Hidenori 2 |
| |
12 |
Characteristics of hydrogen permeation through
strain-relaxed SiGe film on Si substrate |
Okayama Univ. 1@*Yamashita Yoshifumi 1, Sakamoto
Yoshifumi 1, Ishiyama Takeshi 1, Kamiura Yoichi 1 |
| |
13 |
First Principle Calculations on Interaction between
Contaminated Cu Atom and O Atoms in Si Crystal
|
Okayama Pref Univ 1
@*Ohara Shigehiro 1,Shiba Seiji 1,Sueoka Kouji 1,Fukutani Seishiro 1
|
| |
14 |
Analysis of gettering model of Copper in P/P+ silicon
wafers |
Komatsu Electronic Metals@Nakamura Kozo, Iga Hisao,
Tomioka Junsuke |
| |
15 |
Positron annihilation in vacancy-Cu complexes in
Si |
Chiba Univ. 1, NIMS 2, JAEA 3, Renesas 4, Siltronic
Japan 5@*Masanori Fujinami 1, Kazuya Watanabe 1, Koichi Oguma 1, Takashi
Akahane 2, Atsuo Kawasuso 3, Masaki Maekawa 3, Kazuhito Matsukawa 4, Hirofumi
Harada 5 |
| |
16 |
Gettering Mechanism of 3d Transition Metals by
using First principle |
Renesas Technology 1, Osaka Univ ISIR 2@*Matsukawa
Kazuhito 1.2, Shirai Koun 2, Yosida Hiroshi 2 |
| |
17 |
Behaviors of iron atoms in multicrystaline-silicon
solar battery material |
SIST 1, KYOCERA Corporation 2@*S Aoki 1, S Horie
1, K suzuki 1, Y Yoshida 1, K Niira 2, K fukui 2, K shirasawa 2 |
| |
18 |
Development of gMossbauer spectroscopic iron microscopeh |
Shizuoka Inst of Science and Technology 1,SHIMADZU
SRI 2@Kunifumi Suzuki 1,Yutaka Yoshida 1,Kazuo Hayakawa 1,Kenichi Yukihira
1,Hiroyoshi Soejima 2 |